BAV20

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV20; BAV21 General purpose diodes Product data sheet Supersedes data of 1996 Sep 17 1999 May 25 NXP Semiconductors Product data sheet General purpose diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. The diodes are type branded. handbook, halfpage k BAV20; BAV21 DESCRIPTION The BAV20 and BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. a MAM246 Fig.1 Simplified outline (SOD27; DO-35) and symbol. 1999 May 25 2 NXP Semiconductors Product data sheet General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAV20 BAV21 VR continuous peak reverse voltage BAV20 BAV21 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 μs t = 100 μs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − see Fig.2; note 1 − − − − PARAMETER repetitive peak reverse voltage − − CONDITIONS BAV20; BAV21 MIN. MAX. 200 250 150 200 250 625 V V V V UNIT mA mA 9 3 1 400 +175 175 A A A mW °C °C 1999 May 25 3 NXP Semiconductors Product data sheet General purpose diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 100 mA IF = 200 mA IR reverse current see Fig.5 VR = VRmax VR = VRmax; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − − − − − − CONDITIONS BAV20; BAV21 MIN. MAX. 1.0 1.25 100 100 5 50 V V UNIT nA μA pF ns THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 375 UNIT K/W K/W 1999 May 25 4 NXP Semiconductors Product data sheet General purpose diodes GRAPHICAL DATA BAV20; BAV21 handbook, halfpage 300 MBG449 handbook, halfpage 600 MBG459 IF (mA) 200 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10−1 1 10 102 103 tp (μs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 25 5 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 103 handbook, halfpage IR (μA) MGD009 MGD005 handbook, halfpage 1.6 102 Cd (pF) 1.4 10 1.2 1 10−1 1.0 10−2 0 100 Tj (oC) 200 0.8 0 10 VR (V) 20 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 300 MGL588 VR (V) (1) 200 (2) 100 0 0 (1) BAV21. (2) BAV20. 100 Tamb (oC) 200 Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1999 May 25 6 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 handbook, full pagewidth tr tp t D.U.T. R = 50 Ω S V = VR IF x R S 10% SAMPLING OSCILLOSCOPE IF t rr t IF R i = 50 Ω VR 90% (1) MGA881 input signal output signal (1) IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1999 May 25 7 NXP Semiconductors Product data sheet General purpose diodes PACKAGE OUTLINE BAV20; BAV21 Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D L G1 L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 1999 May 25 8 NXP Semiconductors Product data sheet General purpose diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BAV20; BAV21 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 1999 May 25 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/03/pp10 Date of release: 1999 May 25 Document order number: 9397 750 05895