BC327

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Package NXP BC807 BC807W BC327[1] [1] Type number NPN complement JEITA SC-70 SC-43A BC817 BC817W BC337 SOT23 SOT323 SOT54 (TO-92) Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current DC current gain BC807; BC807W; BC327 BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC327-25 BC807-40; BC807-40W; BC327-40 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions open base; IC = 10 mA Min - Typ - Max −45 Unit V −500 mA −1 A IC = −100 mA; VCE = −1 V [1] 100 100 160 250 - 600 250 400 600 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 2. Pinning information Table 3. Pin SOT23 1 2 3 base emitter collector 1 2 2 sym013 Pinning Description Simplified outline Symbol 3 1 3 SOT323 1 2 3 base emitter collector 3 1 2 sym013 3 1 2 sot323_so SOT54 1 2 3 emitter base collector 1 2 3 001aab347 3 2 1 006aaa149 SOT54A 1 2 3 emitter base collector 1 2 3 001aab348 3 2 1 006aaa149 SOT54 variant 1 2 3 emitter base collector 1 2 3 001aab447 3 2 1 006aaa149 BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 2 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 3. Ordering information Table 4. Ordering information Package Name BC807 BC807W BC327[2] [1] [2] Type number[1] Description plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads Version SOT23 SOT323 SC-70 SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads Valid for all available selection groups. Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. BC807 BC807-16 BC807-25 BC807-40 BC807W BC807-16W BC807-25W BC807-40W BC327 BC327-16 BC327-25 BC327-40 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] 5D* 5A* 5B* 5C* 5D* 5A* 5B* 5C* C327 C32716 C32725 C32740 Type number BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 3 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation BC807 BC807W BC327 Tstg Tj Tamb [1] [2] Conditions open emitter open base; IC = 10 mA open collector Min - Max −50 −45 −5 −500 −1 −200 250 200 625 +150 150 +150 Unit V V V mA A mA mW mW mW °C °C °C Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C [1][2] [1][2] [1][2] −65 −65 storage temperature junction temperature ambient temperature Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Valid for all available selection groups. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient BC807 BC807W BC327 [1] [2] Conditions Min Typ Max Unit Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C [1][2] [1][2] [1][2] - - 500 625 200 K/W K/W K/W Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Valid for all available selection groups. BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 4 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions IE = 0 A; VCB = −20 V IE = 0 A; VCB = −20 V; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC807; BC807W; BC327 BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC327-25 BC807-40; BC807-40W; BC327-40 hFE VCEsat VBE Cc fT DC current gain collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency Pulse test: tp ≤ 300 μs; δ ≤ 0.02. VBE decreases by approximately 2 mV/K with increasing temperature. Min [1] Typ 5 - Max −100 −5 −100 600 250 400 600 −700 −1.2 - Unit nA μA nA IC = 0 A; VEB = −5 V IC = −100 mA; VCE = −1 V 100 100 160 250 IC = −500 mA; VCE = −1 V IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −1 V IE = ie = 0 A; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz [1] [1] 40 80 mV V pF MHz [2] [1] [2] BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 5 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 300 (1) 006aaa119 600 006aaa120 hFE hFE (1) 200 (2) 400 (2) 100 (3) 200 (3) 0 −10−1 −1 −10 −102 I C (mA) −103 0 −10−1 −1 −10 −102 I C (mA) −103 VCE = −1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = −1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Selection -16: DC current gain as a function of collector current; typical values 800 hFE 600 (1) Fig 2. Selection -25: DC current gain as a function of collector current; typical values 006aaa121 400 (2) 200 (3) 0 −10−1 −1 −10 −102 I C (mA) −103 VCE = −1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Selection -40: DC current gain as a function of collector current; typical values BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 6 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors −10 006aaa122 −10 006aaa123 VBEsat (V) VBEsat (V) −1 (1) (2) (3) −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 I C (mA) −103 −10−1 −10−1 −1 −10 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 4. Selection -16: Base-emitter saturation voltage as a function of collector current; typical values −10 Fig 5. Selection -25: Base-emitter saturation voltage as a function of collector current; typical values 006aaa124 VBEsat (V) −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 7 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors −1 006aaa125 −1 VCEsat (V) −10−1 006aaa126 VCEsat (V) −10−1 −10−2 (1) (1) (2) (3) (3) (2) −10−2 −10−1 −1 −10 −102 I C (mA) −103 −10−3 −10−1 −1 −10 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Selection -16: Collector-emitter saturation voltage as a function of collector current; typical values −1 VCEsat (V) −10−1 Fig 8. Selection- 25: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa127 (1) (2) −10−2 (3) −10−3 −10−1 −1 −10 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 8 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors −1.2 IC (A) −0.8 (3) 006aaa128 −1.2 (3) 006aaa129 (2) (1) (2) (1) IC (A) −0.8 (4) (5) (6) (7) (8) (9) (4) (5) (6) (7) (8) −0.4 (9) (10) −0.4 (10) 0 0 −1 −2 −3 −4 −5 VCE (V) 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) IB = −16.0 mA (2) IB = −14.4 mA (3) IB = −12.8 mA (4) IB = −11.2 mA (5) IB = −9.6 mA (6) IB = −8.0 mA (7) IB = −6.4 mA (8) IB = −4.8 mA (9) IB = −3.2 mA (10) IB = −1.6 mA Tamb = 25 °C (1) IB = −13.0 mA (2) IB = −11.7 mA (3) IB = −10.4 mA (4) IB = −9.1 mA (5) IB = −7.8 mA (6) IB = −6.5 mA (7) IB = −5.2 mA (8) IB = −3.9 mA (9) IB = −2.6 mA (10) IB = −1.3 mA Fig 10. Selection -16: Collector current as a function of collector-emitter voltage; typical values Fig 11. Selection -25: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 9 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors −1.2 IC (A) −0.8 (5) (4) (3) 006aaa130 (2) (1) (6) (7) (8) (9) −0.4 (10) 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) IB = −12.0 mA (2) IB = −10.8 mA (3) IB = −9.6 mA (4) IB = −8.4 mA (5) IB = −7.2 mA (6) IB = −6.0 mA (7) IB = −4.8 mA (8) IB = −3.6 mA (9) IB = −2.4 mA (10) IB = −1.2 mA Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 10 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 13. Package outline SOT23 (TO-236AB) BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 11 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Plastic surface-mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 14. Package outline SOT323 (SC-70) BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 12 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 15. Package outline SOT54 (SC-43A/TO-92) BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 13 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A c E d A L2 L b 1 D e1 e 2 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 5.08 e1 2.54 L 14.5 12.7 L1(1) max. L2 3 2 3 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 97-05-13 04-06-28 Fig 16. Package outline SOT54A BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 14 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c e1 L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-06-28 05-01-10 Fig 17. Package outline SOT54 variant BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 15 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC807 BC807W BC327 BC327 BC327 BC327 [1] Package SOT23 SOT323 SOT54 SOT54A SOT54A SOT 54 variant Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch bulk, delta pinning (on-circle) Packing quantity 3000 -215 -115 5000 -412 -112 10000 -235 -135 -116 -126 - For further information and the availability of packing methods, see Section 12. BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 16 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 10. Revision history Table 10. Revision history Release date 20091117 Data sheet status Product data sheet Change notice Supersedes BC807_BC807W_ BC327_5 Document ID BC807_BC807W_ BC327_6 Modifications: • • • • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 “Pinning”: updated Figure 13 “Package outline SOT23 (TO-236AB)”: updated Figure 14 “Package outline SOT323 (SC-70)”: updated Product data sheet Product specification Product specification Product specification CPCN200302007F CPCN200405006F BC807_4; BC807W_3; BC327_3 BC807_3 BC807W_808W_CNV_2 BC327_2 BC807_BC807W_ BC327_5 BC807_4 BC807W_3 BC327_3 20050221 20040116 19990518 19990415 BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 17 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 11. Legal information 11.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 18 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 November 2009 Document identifier: BC807_BC807W_BC327_6