BC369

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Nov 20 2004 Nov 05 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A FEATURES • High current • Two current gain selections. APPLICATIONS • Linear voltage regulators • High side switches • Supply line switches • MOSFET drivers • Audio pre-amplifiers. DESCRIPTION PNP medium power transistor (see “Simplified outline, symbol and pinning”) for package details. PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS BC369 BC369-16 BC369-25 SOT54 SOT54 SOT54 EIAJ SC-43A SC-43A SC-43A C369 C36916 C36925 MARKING CODE QUICK REFERENCE DATA SYMBOL VCEO IC ICM hFE PARAMETER collector-emitter voltage collector current (DC) peak collector current DC current gain BC369 BC369-16 BC369-25 85 100 160 BC369 MIN. MAX. UNIT − − − −20 −1 −2 375 250 375 V A A SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER BC369 SIMPLIFIED OUTLINE AND SYMBOL PIN 1 handbook, halfpage 2 3 DESCRIPTION base collector emitter 2 1 3 1 2 3 MAM285 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC369 BC369-16 BC369-25 SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Nov 05 2 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; notes 1 and 2 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −32 −20 −5 −1 −2 −200 830 +150 150 +150 BC369 UNIT V V V A A mA mW °C °C °C 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54. handbook, halfpage 1 MLE301 Ptot (W) 0.8 0.6 0.4 0.2 0 −65 −5 55 175 115 Tamb (°C) Fig.1 Power derating curve for standard PCB footprint. 2004 Nov 05 3 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS Tamb ≤ 25 °C; notes 1 and 2 VALUE 150 BC369 UNIT K/W 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54. 103 handbook, full pagewidth Rth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) MLE302 10 (7) (8) (9) P 1 (10) δ= tp T tp T 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t tp (s) 103 (1) δ = 1.0. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.03. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Fig.2 Transient thermal resistance from junction to ambient as a function of pulse time for standard PCB footprint. 2004 Nov 05 4 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BC369 VCE = −10 V; IC = −5 mA VCE = −1 V; IC = −500 mA VCE = −1 V; IC = −1 A BC369-16 BC369-25 VCEsat VBE Cc fT base-emitter voltage collector capacitance transition frequency VCE = −1 V; IC = −500 mA VCE = −1 V; IC = −500 mA VCE = −10 V; IC = −5 mA VCE = −1 V; IC = −1 A VCB = −10 V; IE = ie = 0 A; f = 1 MHz 50 85 60 100 160 − − − − − − − − − − − − 28 140 − CONDITIONS VCB = −25 V; IE = 0 A VCB = −25 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A MIN. − − − TYP. − − − BC369 MAX. UNIT −100 −10 −100 nA μA nA 375 − 250 375 −500 −700 −1 − − mV mV V pF MHz collector-emitter saturation voltage IC = −1 A; IB = −100 mA VCE = −5 V; IC = −50 mA; f = 100 MHz 40 2004 Nov 05 5 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 handbook, halfpage I (1) (2) (3) (4) (5) −2.4 C (A) −2.0 MLE297 handbook, halfpage −1000 VBE (mV) −800 MLE294 −1.6 −1.2 −600 (6) (7) −0.8 −0.4 (8) (9) (10) −400 −200 0 0 −1 −2 −3 −4 −5 VCE (V) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) BC369-16. Tamb = 25 °C. (1) IB = −18 mA. (2) IB = −16.2 mA. (3) IB = −14.4 mA. (4) IB = −12.6 mA. (5) IB = −10.8 mA. (6) IB = −9.0 mA. (7) IB = −7.2 mA. (8) IB = −5.4 mA. (9) IB = −3.6 mA. (10) IB = −1.8 mA. BC369-16. VCE = −1 V. Fig.3 Collector current as a function of collector-emitter voltage; typical values. Fig.4 Base-emitter voltage as a function of collector current; typical values. 2004 Nov 05 6 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 103 handbook, halfpage MLE299 −103 handbook, halfpage VCEsat (mV) −102 MLE300 hFE −10 102 −10−1 −1 −10 −102 −103 −104 IC (mA) −1 −10−1 −1 −10 −102 −103 −104 IC (mA) BC369-16. VCE = −1 V. BC369-16. IC/IB = 10. Fig.5 DC current gain as a function of collector current; typical values. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 05 7 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 handbook, halfpage I (1) (2) (3) (4) (5) −2.4 C (A) −2.0 MLE293 handbook, halfpage −1000 VBE (mV) −800 MLE294 −1.6 −1.2 −600 (6) (7) (8) −400 −0.8 (9) −0.4 (10) −200 0 0 −1 −2 −3 −4 −5 VCE (V) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) BC369-25. Tamb = 25 °C. (1) (2) (3) (4) (5) IB = −12 mA. IB = −10.8 mA. IB = −9.6 mA. IB = −8.4 mA. IB = −7.2 mA. (6) IB = −6.0 mA. (7) IB = −4.8 mA. (8) IB = −3.6 mA. (9) IB = −2.4 mA. (10) IB = −1.2 mA. BC369-25. VCE = −1 V. Fig.7 Collector current as a function of collector-emitter voltage; typical values. Fig.8 Base-emitter voltage as a function of collector current; typical values. 2004 Nov 05 8 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 103 handbook, halfpage MLE295 −103 handbook, halfpage VCEsat (mV) −102 MLE296 hFE −10 102 −10−1 −1 −10 −102 −103 −104 IC (mA) −1 −10−1 −1 −10 −102 −103 −104 IC (mA) BC369-25. VCE = −1 V. BC369-25. IC/IB = 10. Fig.9 DC current gain as a function of collector current; typical values. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 05 9 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BC369 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 2004 Nov 05 10 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BC369 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Nov 05 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp12 Date of release: 2004 Nov 05 Document order number: 9397 750 13565