BC52PA,115

BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP JEITA JEDEC BCP52 SOT223 SC-73 - BCP55 BCX52 SOT89 SC-62 TO-243 BCX55 BC52PA SOT1061 - - BC55PA [1] NPN complement Valid for all available selection groups. 1.2 Features and benefits       High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications       Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 1 A ICM peak collector current - - 2 A single pulse; tp  1 ms BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max hFE DC current gain VCE = 2 V; IC = 150 mA 63 - 250 hFE selection -10 VCE = 2 V; IC = 150 mA 63 - 160 hFE selection -16 VCE = 2 V; IC = 150 mA 100 - 250 Unit 2. Pinning information Table 3. Pin Pinning Description Simplified outline Graphic symbol SOT223 1 base 2 collector 3 emitter 4 collector 2, 4 4 1 1 2 3 3 sym028 SOT89 1 emitter 2 collector 3 base 2 3 3 2 1 1 006aaa231 SOT1061 1 base 2 emitter 3 collector 3 3 1 2 1 2 sym013 Transparent top view BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BCP52 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCX52 SC-62 plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 BC52PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2  2  0.65 mm [1] SOT1061 Valid for all available selection groups. 4. Marking Table 5. BCP52_BCX52_BC52PA Product data sheet Marking codes Type number Marking code BCP52 BCP52 BCP52-10 BCP52/10 BCP52-16 BCP52/16 BCX52 AE BCX52-10 AG BCX52-16 AM BC52PA BS BC52-10PA BT BC52-16PA BU All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V IC collector current - 1 A ICM peak collector current - 2 A IB base current - 0.3 A IBM peak base current single pulse; tp  1 ms - 0.3 A Ptot total power dissipation Tamb  25 C [1] - 0.65 W [2] - 1.00 W [3] - 1.35 W [1] - 0.50 W [2] - 0.95 W [3] - 1.35 W [1] - 0.42 W [2] - 0.83 W [3] - 1.10 W [4] - 0.81 W [5] - 1.65 W single pulse; tp  1 ms BCP52 BCX52 BC52PA BCP52_BCX52_BC52PA Product data sheet Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1) Ptot (W) Ptot (W) (2) 1.0 (2) 1.0 (3) (3) 0.5 0.5 0.0 –75 –25 25 75 0.0 –75 125 175 Tamb (°C) –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (1) FR4 PCB, mounting pad for collector 6 cm2 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, mounting pad for collector 1 (3) FR4 PCB, standard footprint Fig 1. (3) FR4 PCB, standard footprint Power derating curves SOT223 Fig 2. Power derating curves SOT89 006aac676 2.0 Ptot (W) (1) 1.5 (2) 1.0 (3) (4) 0.5 (5) 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig 3. Power derating curves SOT1061 BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 192 K/W [2] - - 125 K/W [3] - - 93 K/W [1] - - 250 K/W [2] - - 132 K/W [3] - - 93 K/W [1] - - 298 K/W [2] - - 151 K/W [3] - - 114 K/W [4] - - 154 K/W [5] - - 76 K/W BCP52 - - 16 K/W BCX52 - - 16 K/W BC52PA - - 20 K/W BCP52 BCX52 BC52PA Rth(j-sp) BCP52_BCX52_BC52PA Product data sheet thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac677 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac678 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac679 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac680 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac681 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac683 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 0.05 10 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, standard footprint Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac684 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac685 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 10 1 0 10–1 10–5 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac686 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.33 0.2 0.1 10 0.05 0.02 1 0 10–1 10–5 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, standard footprint Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac687 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 10 0.1 1 0 10–1 10–5 0.33 0.2 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 102 10 103 tp (s) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA VCB = 30 V; IE = 0 A; Tj = 150 C - - 10 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V 63 - - 63 - 250 40 - - 63 - 160 IC = 5 mA IC = 150 mA IC = 500 mA DC current gain Product data sheet VCE = 2 V hFE selection -10 IC = 150 mA hFE selection -16 IC = 150 mA 100 - 250 - - 0.5 V - - 1 V VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] VBE base-emitter voltage VCE = 2 V; IC = 500 mA [1] Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 15 - pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz - 145 - MHz [1] BCP52_BCX52_BC52PA [1] Pulse test: tp  300 s;  = 0.02. All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 006aac688 300 006aaa230 −1.6 IB (mA) = −45 −40.5 −36 IC (A) hFE −31.5 −27 −22.5 −1.2 (1) 200 −18 −13.5 (2) 100 −0.8 −9 −4.5 (3) −0.4 0 –10–4 –10–3 –10–2 –10–1 0 –1 –10 0 IC (A) VCE = 2 V −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 15. DC current gain as a function of collector current; typical values 006aac689 –1.2 Fig 16. Collector current as a function of collector-emitter voltage; typical values 006aac690 –10 VCEsat (V) VBE (V) (1) –1 –0.8 (2) (3) –0.4 (1) –10–1 (2) (3) 0.0 –10–1 –1 –10 –102 –103 –104 IC (mA) VCE = 2 V –10–2 –10–1 –1 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 55 C Fig 17. Base-emitter voltage as a function of collector current; typical values Product data sheet –102 –103 –104 IC (mA) IC/IB = 10 (1) Tamb = 55 C BCP52_BCX52_BC52PA –10 Fig 18. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 13 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 0.32 0.22 0.8 0.6 2.3 4.6 Dimensions in mm 04-11-10 Fig 19. Package outline SOT223 (SC-73) 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 20. Package outline SOT89 (SC-62/TO-243) BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 14 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 21. Package outline SOT1061 (HUSON3) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package BCP52 SOT223 BCX52 BC52PA BCP52_BCX52_BC52PA Product data sheet Description Packing quantity 8 mm pitch, 12 mm tape and reel SOT89 SOT1061 - -135 8 mm pitch, 12 mm tape and reel; T1 -115 - -135 8 mm pitch, 12 mm tape and reel; T3 [4] -146 - - - -115 - 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. Valid for all available selection groups. T1: normal taping T3: 90 rotated taping 4000 -115 [2] [4] 3000 [3] [1] [3] 1000 All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 15 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 22. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 23. Wave soldering footprint SOT223 (SC-73) BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 16 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1.1 (2×) 1 (3×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 24. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig 25. Wave soldering footprint SOT89 (SC-62/TO-243) BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 17 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 26. Reflow soldering footprint SOT1061 (HUSON3) BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 18 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCP52_BCX52_BC52PA v.9 20111018 Product data sheet - Modifications: • • • • • • • • BCP52_BCX52 v.8 Added Type numbers: BC52PA, BC52-10PA and BC52-16PA Section 1 “Product profile”: updated Table 6 and 7: updated according to latest measurements Figure 1 to 9, 15, 17, 18 and 21: updated Figure 10 to 14: added Section 8 “Test information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BCP52_BCX52 v.8 20080225 Product data sheet - BC638_BCP52_BCX52 v.7 BC638_BCP52_BCX52 v.7 20070626 Product data sheet - BC638_BCP52_BCX52 v.6 BC638_BCP52_BCX52 v.6 20060329 Product data sheet - BC636_638_640 v.5 BCP51_52_53 v.5 BCX51_52_53 v.4 BC636_638_640 v.5 20041011 Product specification - BC636_638_640 v.4 BCP51_52_53 v.5 20030206 Product specification - BCP51_52_53 v.4 BCX51_52_53 v.4 20011010 Product specification - BCX51_52_53 v.3 BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 19 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 20 of 22 BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 21 of 22 NXP Semiconductors BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 14 Quality information . . . . . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Packing information . . . . . . . . . . . . . . . . . . . . 15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information. . . . . . . . . . . . . . . . . . . . . 21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 18 October 2011 Document identifier: BCP52_BCX52_BC52PA