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BC639

BC639

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BC639 - 80 V, 1 A NPN medium power transistors - NXP Semiconductors

  • 数据手册
  • 价格&库存
BC639 数据手册
BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Package NXP BC639[2] BCP56 BCX56 [1] [2] Type number[1] PNP complement JEITA SC-43A SC-73 SC-62 JEDEC TO-92 TO-243 BC640 BCP53 BCX53 SOT54 SOT223 SOT89 Valid for all available selection groups. Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I I I I Linear voltage regulators Low-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter collector-emitter voltage collector current peak collector current DC current gain hFE selection -10 hFE selection -16 single pulse; tp ≤ 1 ms VCE = 2 V; IC = 150 mA VCE = 2 V; IC = 150 mA VCE = 2 V; IC = 150 mA Conditions open base Min 63 63 100 Typ Max 80 1 1.5 250 160 250 Unit V A A NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 2. Pinning information Table 3. Pin SOT54 1 2 3 base collector emitter 1 2 3 001aab347 Pinning Description Simplified outline Symbol 2 1 3 sym056 SOT54A 1 2 3 base collector emitter 1 2 3 001aab348 2 1 3 sym056 SOT54 variant 1 2 3 base collector emitter 1 2 3 001aab447 2 1 3 sym056 SOT223 1 2 3 4 base collector emitter collector 1 2 3 3 sym016 4 1 2, 4 SOT89 1 2 3 emitter collector base 3 2 1 3 1 sym042 2 BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 2 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 3. Ordering information Table 4. Ordering information Package Name BC639[2] BCP56 BCX56 [1] [2] Type number[1] Description plastic single-ended leaded (through hole) package; 3 leads plastic surface-mounted package with increased heatsink; 4 leads Version SOT54 SOT223 SC-43A SC-73 SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads Valid for all available selection groups. Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. BC639 BC639-10 BC639-16 BCP56 BCP56-10 BCP56-16 BCX56 BCX56-10 BCX56-16 Marking codes Marking code C639 C63910 C63916 BCP56 BCP56/10 BCP56/16 BH BK BL Type number BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 3 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation BC639 BCP56 BCX56 single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [1] [2] [1] [2] [3] Conditions open emitter open base open collector Min - Max 100 80 5 1 1.5 0.2 Unit V V V A A A −65 −65 0.83 0.64 0.96 0.5 0.85 1.25 150 +150 +150 W W W W W W °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 4 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 1.6 Ptot (W) 1.2 006aaa085 1.6 Ptot (W) 1.2 (1) 006aaa086 0.8 0.8 (2) 0.4 0.4 0 − 75 − 25 0 25 75 125 175 Tamb (°C) 0 − 75 − 25 0 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curve SOT54 1.6 Ptot (W) 1.2 Fig 2. Power derating curves SOT223 006aaa087 (1) (2) 0.8 (3) 0.4 0 − 75 − 25 0 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 3. Power derating curves SOT89 BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 5 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient BC639 BCP56 BCX56 Conditions in free air [1] [1] [2] [1] [2] [3] Min Typ Max Unit - - 150 195 130 250 145 100 K/W K/W K/W K/W K/W K/W Rth(j-sp) thermal resistance from junction to solder point BC639 BCP56 BCX56 40 17 30 K/W K/W K/W [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 103 Zth(j-a) (K/W) 102 006aaa088 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 10−5 0 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54; typical values BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 6 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 103 Zth(j-a) (K/W) 102 duty cycle = 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 1 006aaa814 10 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 103 Zth(j-a) (K/W) duty cycle = 102 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 10−5 0 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 006aaa089 FR4 PCB, mounting pad for collector 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 7 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 103 duty cycle = Zth(j-a) (K/W) 102 1.0 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 006aaa815 103 tp (s) FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 103 Zth(j-a) (K/W) 102 006aaa090 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 1 10−5 FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 8 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 103 Zth(j-a) (K/W) 102 duty cycle = 006aaa816 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 10 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 2 V IC = 5 mA IC = 150 mA IC = 500 mA DC current gain hFE selection -10 hFE selection -16 VCEsat VBE Cc fT [1] [1] Min - Typ - Max 100 10 100 Unit nA µA nA IEBO hFE 63 63 40 63 100 [1] 6 180 250 160 250 500 1 mV V pF MHz VCE = 2 V IC = 150 mA IC = 150 mA IC = 500 mA; IB = 50 mA VCE = 2 V; IC = 500 mA VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 5 V; IC = 50 mA; f = 100 MHz collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency 100 [1] Pulse test: tp ≤ 300 µs; δ = 0.02. BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 9 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 300 hFE (1) 006aaa080 1.6 IB (mA) = 50 IC (A) 1.2 45 40 35 30 006aaa084 200 25 20 15 (2) 0.8 10 5 100 (3) 0.4 0 10−1 0 1 10 102 103 104 IC (mA) 0 0.4 0.8 1.2 1.6 2.0 VCE (V) VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 10. DC current gain as a function of collector current; typical values 1.2 VBE (V) 0.8 (1) Fig 11. Collector current as a function of collector-emitter voltage; typical values 1 006aaa082 006aaa081 VCEsat (V) (2) 10−1 0.4 (3) (1) (2) (3) 0 10−1 1 10 102 103 104 I C (mA) 10−2 10−1 1 10 102 103 104 IC (mA) VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 12. Base-emitter voltage as a function of collector current; typical values Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 10 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 8. Package outline 4.2 3.6 0.45 0.38 4.2 3.6 0.45 0.38 0.48 0.40 1 3 max 0.48 0.40 1 4.8 4.4 2 2.54 3 1.27 4.8 4.4 2 5.08 2.54 3 5.2 5.0 Dimensions in mm 14.5 12.7 04-11-16 5.2 5.0 Dimensions in mm 14.5 12.7 04-06-28 Fig 14. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 4.2 3.6 1.27 Fig 15. Package outline SOT54A 6.7 6.3 3.1 2.9 4 1.8 1.5 2.5 max 1 4.8 4.4 2 0.48 0.40 7.3 6.7 2.54 3 1.27 1 2 4.6 05-01-10 Dimensions in mm 3 0.8 0.6 3.7 3.3 1.1 0.7 5.2 5.0 Dimensions in mm 14.5 12.7 2.3 0.32 0.22 04-11-10 Fig 16. Package outline SOT54 variant 4.6 4.4 1.8 1.4 Fig 17. Package outline SOT223 (SC-73) 1.6 1.4 2.6 2.4 4.25 3.75 1.2 0.8 0.48 0.35 3 0.44 0.23 06-08-29 1 0.53 0.40 1.5 Dimensions in mm 2 3 Fig 18. Package outline SOT89 (SC-62/TO-243) BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 11 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package BC639 SOT54 SOT54A SOT54 variant BCP56 BCX56 SOT223 SOT89 Description bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch bulk, delta pinning 8 mm pitch, 12 mm tape and reel 8 mm pitch, 12 mm tape and reel; T1 8 mm pitch, 12 mm tape and reel; T3 [1] [2] [3] [4] For further information and the availability of packing methods, see Section 12. Valid for all available selection groups. T1: normal taping T3: 90° rotated taping [3] [4] Packing quantity 1000 -115 -115 -120 4000 -135 -135 5000 -412 -112 10000 -116 -126 - BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 12 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 10. Revision history Table 10. Revision history Release date 20070622 Data sheet status Product data sheet Change notice Supersedes BC639_BCP56_BCX56_7 Document ID BC639_BCP56_BCX56_8 Modifications: • • • • • • • • • • • • • • • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 1 “Product overview”: amended Section 1.2 “Features”: amended Section 1.3 “Applications”: amended Table 2 “Quick reference data”: IC parameter redefined to collector current Table 2 “Quick reference data”: ICM condition added Figure 2 and 3: amended Table 6 “Limiting values”: IC parameter redefined to collector current Table 6 “Limiting values”: ICM condition added Table 6 “Limiting values”: Ptot values for BCP56 and BCX56 adapted Table 7 “Thermal characteristics”: Rth(j-a) values for BCP56 and BCX56 rounded Figure 4: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient Figure 4: tp parameter redefined to pulse duration Figure 5: added Figure 6: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient Figure 6: tp parameter redefined to pulse duration Figure 7: added Figure 8: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient Figure 8: tp parameter redefined to pulse duration Figure 9: added Figure 11: amended Table 9 “Packing methods”: new packing method for BCX56 added Section 11 “Legal information”: updated Product data sheet Product data sheet CPCN200405029 BC639_BCP56_BCX56_6 BC635_637_639_4 BCP54_55_56_5 BCX54_55_56_4 BC635_637_639_3 BCP54_55_56_4 BCX54_55_56_3 BC639_BCP56_BCX56_7 BC639_BCP56_BCX56_6 20050308 20050303 BC635_637_639_4 BCP54_55_56_5 BCX54_55_56_4 20011010 20030206 20011010 Product specification Product specification Product specification - BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 13 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 22 June 2007 14 of 15 NXP Semiconductors BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 June 2007 Document identifier: BC639_BCP56_BCX56_8
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