BC846BPN

BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP BC846BPN SOT363 JEITA SC-88 NPN/NPN complement BC846BS PNP/PNP complement BC856BS Type number 1.2 Features I I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC TR1 (NPN) hFE TR2 (PNP) hFE DC current gain VCE = −5 V; IC = −2 mA 200 290 450 DC current gain VCE = 5 V; IC = 2 mA 200 300 450 Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max 65 100 Unit V mA Per transistor; for the PNP transistor with negative polarity NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 1 2 sym019 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 3 3. Ordering information Table 4. Ordering information Package Name BC846BPN SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 5. Marking codes Marking code[1] PJ* Type number BC846BPN [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 2 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tamb ≤ 25 °C [1] Min −55 −65 Max 80 65 6 100 200 200 200 300 150 +150 +150 Unit V V V mA mA mA mW mW °C °C °C Per transistor; for the PNP transistor with negative polarity [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 006aab618 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 (SC-88) BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 3 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] Conditions in free air [1] Min - Typ - Max 625 230 Unit K/W K/W Per transistor - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab619 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 4 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter TR1 (NPN) ICBO collector-base cut-off VCB = 50 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current DC current gain VEB = 6 V; IC = 0 A VCE = 5 V IC = 10 µA IC = 2 mA VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 2 mA IC = 10 mA Cc Ce fT NF collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz emitter capacitance transition frequency noise figure VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz TR2 (PNP) ICBO collector-base cut-off VCB = −50 V; IE = 0 A current VCB = −30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current DC current gain VEB = −6 V; IC = 0 A VCE = −5 V IC = −10 µA IC = −2 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA 200 270 290 −55 −200 450 −100 −300 mV mV −15 −5 −100 nA µA nA 200 580 100 280 300 55 200 755 1000 650 1.9 11 1.9 450 100 300 850 700 770 mV mV mV mV mV mV pF pF MHz dB 15 5 100 nA µA nA Conditions Min Typ Max Unit IEBO hFE base-emitter voltage VCE = 5 V - 3.1 - dB IEBO hFE BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 5 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter VBEsat base-emitter saturation voltage Conditions IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA VBE base-emitter voltage VCE = −5 V IC = −2 mA IC = −10 mA Cc Ce fT NF collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz emitter capacitance transition frequency noise figure VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz −600 100 −650 2.3 10 1.6 −750 −820 mV mV pF pF MHz dB Min Typ −755 −900 Max −850 Unit mV mV - 2.9 - dB 600 hFE 006aaa533 0.20 IC (A) 0.16 006aaa532 IB (mA) = 4.50 4.05 3.60 3.15 2.70 2.25 1.80 1.35 0.90 400 (1) 0.12 (2) 0.08 200 (3) 0.45 0.04 0 10−2 10−1 1 10 102 103 IC (mA) 0 0 2 4 6 8 10 VCE (V) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 4. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 6 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 1 VBE (V) 0.8 006aaa536 1.3 VBEsat (V) 1.1 006aaa534 0.9 (1) (2) (3) 0.7 0.6 0.5 0.3 0.4 10−1 1 10 102 IC (mA) 103 0.1 10−1 1 10 102 IC (mA) 103 VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 5. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values 10 006aaa535 Fig 6. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values 006aaa537 103 VCEsat (V) 1 fT (MHz) 102 10−1 (1) (2) (3) 10−2 10−1 1 10 102 IC (mA) 103 10 1 10 IC (mA) 102 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 5 V; Tamb = 25 °C Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. TR1 (NPN): Transition frequency as a function of collector current; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 7 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 6 Cc (pF) 4 006aab620 15 Ce (pF) 13 006aaa539 11 9 2 7 0 0 2 4 6 8 10 VCB (V) 5 0 2 4 VEB (V) 6 f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Fig 9. TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values 006aaa541 Fig 10. TR1 (NPN): Emitter capacitance as a function of emitter-base voltage; typical values 600 hFE (1) −0.20 IC (A) −0.16 006aaa540 400 −0.12 (2) IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 −1.0 −0.75 −0.08 200 (3) −0.5 −0.25 −0.04 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) 0 0 −2 −4 −6 −8 −10 VCE (V) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values Fig 12. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 8 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor −1 VBE (V) −0.8 006aaa544 −1.3 VBEsat (V) −1.1 006aaa542 −0.9 −0.7 (1) (2) (3) −0.6 −0.5 −0.3 −0.4 −10−1 −1 −10 −102 IC (mA) −103 −0.1 −10−1 −1 −10 −102 IC (mA) −103 VCE = −5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values −10 VCEsat (V) −1 006aaa543 Fig 14. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 103 006aaa545 fT (MHz) 102 −10−1 (1) (2) (3) −10−2 −10−1 −1 −10 −102 IC (mA) −103 10 −1 −10 IC (mA) −102 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = −5 V; Tamb = 25 °C Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 16. TR2 (PNP): Transition frequency as a function of collector current; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 9 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 10 Cc (pF) 8 006aab623 15 Ce (pF) 13 006aaa547 6 11 4 9 2 7 0 0 −2 −4 −6 −8 −10 VCB (V) 5 0 −2 −4 VEB (V) −6 f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Fig 17. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values Fig 18. TR2 (PNP): Emitter capacitance as a function of emitter-base voltage; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 10 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 pin 1 index 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 06-03-16 Fig 19. Package outline SOT363 (SC-88) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC846BPN Package Description SOT363 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 11 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.6 0.5 (4×) (4×) 0.4 (2×) solder resist solder paste 0.5 (4×) 0.6 (4×) 1.8 0.6 (2×) occupied area Dimensions in mm sot363_fr Fig 20. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering 1.3 2.45 5.3 1.3 sot363_fw Fig 21. Wave soldering footprint SOT363 (SC-88) BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 12 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 12. Revision history Table 10. Revision history Release date 20090717 Data sheet status Product data sheet Change notice Supersedes Document ID BC846BPN_1 BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 13 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 14 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Quality information . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 July 2009 Document identifier: BC846BPN_1