BC847BPN

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 200 Typ Max 45 100 450 Unit V mA Per transistor; for the PNP transistor with negative polarity 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 1 2 sym019 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 3 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Package Name BC847BPN SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4. Marking codes Marking code[1] 13* Type number BC847BPN [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg [1] [2] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] Min −65 −65 Max 50 45 5 100 200 200 220 250 300 400 150 +150 +150 Unit V V V mA mA mA mW mW mW mW °C °C °C Per transistor; for the PNP transistor with negative polarity total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 2 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 500 Ptot (mW) 400 (2) (1) 006aab419 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves SOT363 (SC-88) 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] Min - Typ - Max 568 500 230 Unit K/W K/W K/W Per transistor - - 416 313 K/W K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 3 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab420 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab421 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 4 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions Min 200 [1] Typ 755 Max 15 5 100 450 100 300 - Unit nA µA nA Per transistor; for the PNP transistor with negative polarity collector-base cut-off VCB = 30 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage TR1 (NPN) TR2 (PNP) Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz TR1 (NPN) TR2 (PNP) Ce emitter capacitance TR1 (NPN) TR2 (PNP) fT [1] IEBO hFE VCEsat VBEsat VBE VEB = 5 V; IC = 0 A VCE = 5 V; IC = 2 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA mV mV mV - base-emitter voltage IC = 2 mA; VCE = 5 V 580 600 655 655 700 750 mV mV IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 100 - 1.5 2.2 pF pF 11 10 - - pF pF MHz transition frequency Pulse test: tp ≤ 300 µs; δ ≤ 0.02. BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 5 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 600 hFE 500 (1) mgt727 0.20 IC (A) 0.15 006aab422 IB (mA) = 4.0 3.2 2.4 1.6 3.6 2.8 2.0 1.2 400 (2) 0.8 0.10 0.4 300 200 0.05 (3) 100 0 10−1 1 10 102 I C (mA) 103 0 0 1 2 3 4 VCE (V) 5 VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values mgt728 Fig 5. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aab423 1200 VBE (mV) 1000 (1) 1.2 VBEsat (V) 1.0 (1) 800 (2) 0.8 (2) 600 0.6 400 (3) (3) 200 0.4 0 10−2 10−1 1 10 102 103 I C (mA) 0.2 10−1 1 10 102 IC (mA) 103 VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 6. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values Fig 7. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 6 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 104 VCEsat (mV) 103 mgt729 109 006aab424 fT (Hz) 108 102 (1) (3) (2) 10 10−1 1 10 102 I C (mA) 103 107 10−1 1 10 IC (mA) 102 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 5 V; f = 1 MHz; Tamb = 25 °C Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 7 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 600 hFE (1) 006aab425 −0.20 IC (A) −0.15 006aab426 IB (mA) = −3.5 −2.8 −2.1 −1.4 −0.7 −3.15 −2.45 −1.75 −1.05 400 (2) −0.10 −0.35 200 (3) −0.05 0 −10−1 −1 −10 −102 IC (mA) −103 0 0 −1 −2 −3 −4 −5 VCE (V) VCE = −5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values −1200 VBE mV −1000 mld700 Fig 11. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values −1200 VBEsat (mV) −1000 (1) mld702 −800 (1) −800 (2) (2) −600 −600 (3) −400 (3) −400 −200 −10−2 −10−1 −1 −10 −102 −103 IC (mA) −200 −10−1 −1 −10 −102 IC (mA) −103 VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 12. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 13. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 8 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor −104 VCEsat (mV) −103 mld701 109 006aab427 fT (Hz) 108 (1) (2) (3) −102 −10 −10−1 −1 −10 −102 IC (mA) −103 107 −10−1 −1 −10 IC (mA) −102 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = −5 V; f = 1 MHz; Tamb = 25 °C Fig 14. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 9 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 8. Package outline 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 pin 1 index 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 06-03-16 Fig 16. Package outline SOT363 (SC-88) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC847BPN Package Description SOT363 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 For further information and the availability of packing methods, see Section 13. T1: normal taping T2: reverse taping BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 10 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 10. Soldering 2.65 solder lands 2.35 1.5 0.6 0.5 (4×) (4×) 0.4 (2×) solder resist solder paste 0.5 (4×) 0.6 (4×) 1.8 0.6 (2×) occupied area Dimensions in mm sot363_fr Fig 17. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering 1.3 2.45 5.3 1.3 sot363_fw Fig 18. Wave soldering footprint SOT363 (SC-88) BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 11 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 11. Revision history Table 9. Revision history Release date 20090218 Data sheet status Product data sheet Change notice Supersedes BC847BPN_3 Document ID BC847BPN_4 Modifications: • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 4 “Marking”: updated Section 7 “Characteristics”: enhanced Section 9 “Packing information”: added Section 10 “Soldering”: added Section 12 “Legal information”: updated Product specification Preliminary specification Preliminary specification BC847BPN_2 BC847BPN_1 - BC847BPN_3 BC847BPN_2 BC847BPN_1 20011026 19990426 19970709 BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 12 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 13 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 18 February 2009 Document identifier: BC847BPN_4