BC857BM

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet Supersedes data of 2003 Jul 15 2004 Mar 10 NXP Semiconductors Product data sheet PNP general purpose transistors FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General purpose small signal DC • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. MARKING TYPE NUMBER BC857AM BC857BM BC857CM ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC857AM BC857BM BC857CM − DESCRIPTION MARKING CODE D1 D2 D3 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 base emitter collector BC857M series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −45 −100 −200 UNIT V mA mA DESCRIPTION handbook, halfpage 3 3 1 2 2 1 Bottom view MAM469 Fig.1 Simplified outline (SOT883) and symbol. VERSION SOT883 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm 2004 Mar 10 2 NXP Semiconductors Product data sheet PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C note 1 note 2 Tstg Tj Tamb Notes storage temperature junction temperature operating ambient temperature − − −65 − −65 CONDITIONS open emitter open base open collector − − − − − − MIN. BC857M series MAX. −50 −45 −5 −100 −200 −100 250 430 +150 150 +150 V V V UNIT mA mA mA mW mW °C °C °C 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 500 290 K/W K/W VALUE UNIT 2004 Mar 10 3 NXP Semiconductors Product data sheet PNP general purpose transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BC857AM BC857BM BC857CM VBE VCEsat Cc fT F Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. base-emitter voltage collector-emitter saturation voltage collector capacitance transition frequency noise figure IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IE = ie = 0; VCB = −10 V; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −5 V; IC = −2 mA 125 220 420 −600 − − − − 100 − − − − BC857M series MIN. MAX. −15 −5 −100 250 475 800 −750 −820 −200 −400 2.5 − 10 UNIT nA μA nA mV mV mV mV pF MHz dB 2004 Mar 10 4 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857AM MLE188 BC857M series handbook, halfpage 500 handbook, halfpage −1200 VBE (mV) −1000 MLE189 hFE 400 (1) (1) 300 −800 (2) 200 (2) −600 (3) 100 −400 (3) 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) −200 −10−2 −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. −104 handbook, halfpage VCEsat (mV) −103 MLE190 handbook, halfpage −1200 MLE191 VBEsat (mV) −1000 (1) (2) −800 −102 (1) (2) (3) −600 (3) −400 −10 −10−1 −1 −10 −102 IC (mA) −103 −200 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 5 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857BM MLE192 BC857M series handbook, halfpage 1000 handbook, halfpage −1200 VBE (mV) −1000 MLE193 hFE 800 (1) 600 (1) −800 (2) 400 (2) −600 200 (3) −400 (3) 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) −200 −10−2 −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.7 Fig.6 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. −104 handbook, halfpage VCEsat (mV) −103 MLE194 handbook, halfpage −1200 MLE195 VBEsat (mV) −1000 (1) (2) −800 −600 −102 (2) (3) (1) (3) −400 −10 −10−1 −1 −10 −102 IC (mA) −103 −200 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 6 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857CM MLE196 BC857M series handbook, halfpage 1000 handbook, halfpage (1) hFE 800 −1200 VBE −1000 MLE197 (mV) (1) 600 (2) −800 (2) 400 (3) −600 (3) 200 −400 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) −200 −10−1 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −1 −10 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 DC current gain; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. −104 handbook, halfpage VCEsat (mV) −103 MLE198 handbook, halfpage −1200 MLE199 VBEsat (mV) −1000 (1) (2) −800 −600 −102 (2) (3) (1) (3) −400 −10 −10−1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −1 −10 −102 IC (mA) −103 −200 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 7 NXP Semiconductors Product data sheet PNP general purpose transistors PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm BC857M series SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2004 Mar 10 8 NXP Semiconductors Product data sheet PNP general purpose transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BC857M series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12839