BC857T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 26 2000 Nov 15 NXP Semiconductors Product data sheet PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 (SOT416) plastic package. NPN complements: BC846T; BC847T series. MARKING TYPE NUMBER BC856AT BC856BT BC857AT BC857BT BC857CT MARKING CODE 3A 3B 3E 3F 3G Fig.1 handbook, halfpage BC856T; BC857T series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 1 Top view 2 2 MAM362 Simplified outline (SC-75; SOT416) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VCEO collector-emitter voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT 2000 Nov 15 2 NXP Semiconductors Product data sheet PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS PARAMETER thermal resistance from junction to ambient BC856T; BC857T series CONDITIONS in free air; note 1 VALUE 833 UNIT K/W MIN. − − − 125 220 420 − − − − − − − − − − − TYP. MAX. −15 −5 −100 250 475 800 −200 −400 −700 −770 2.5 − − 10 UNIT nA μA nA collector-base cut-off current VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C emitter cut-off current DC current gain BC856AT; BC857AT BC856BT; BC857BT BC857CT VEB = −5 V; IC = 0 VCE = −5 V; IC = −2 mA VCEsat VBE Cc Ce fT F Note collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V VCB = −10 V; f = 1 MHz; IE = ie = 0 VEB = −0.5 V; f = 1 MHz; IC = ic = 0 IC = −10 mA; VCE = −5 V; f = 100 MHz IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − −580 − − − 100 − mV mV mV mV pF pF MHz dB 10 − − 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2000 Nov 15 3 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857AT MGT711 BC856T; BC857T series handbook, halfpage 500 handbook, halfpage hFE 400 (1) − 1200 VBE (mV) − 1000 − 800 MGT712 (1) 300 (2) − 600 200 (2) − 400 100 (3) (3) − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. − 102 − 103 I C (mA) Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT713 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 − 600 MGT714 (1) (2) (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −1 − 10 − 102 − 103 I C (mA) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 4 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857BT MGT715 BC856T; BC857T series handbook, halfpage 1000 handbook, halfpage hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT716 (1) 600 (1) (2) − 600 − 400 − 200 (3) 400 (2) 200 (3) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. − 102 − 103 I C (mA) Fig.7 Fig.6 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT717 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT718 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −1 − 10 − 102 − 103 I C (mA) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 5 NXP Semiconductors Product data sheet PNP general purpose transistors GRAPHICAL INFORMATION BC857CT MGT719 BC856T; BC857T series handbook, halfpage 1000 handbook, halfpage (1) hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT720 (1) 600 (2) (2) − 600 − 400 400 (3) (3) 200 − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −1 − 10 − 102 − 103 I C (mA) VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 DC current gain; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT721 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT722 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −1 − 10 − 102 − 103 I C (mA) Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 6 NXP Semiconductors Product data sheet PNP general purpose transistors PACKAGE OUTLINE BC856T; BC857T series Plastic surface mounted package; 3 leads SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 Nov 15 7 NXP Semiconductors Product data sheet PNP general purpose transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BC856T; BC857T series DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2000 Nov 15 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp9 Date of release: 2000 Nov 15 Document order number: 9397 750 07525