BC858

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 2004 Jan 16 NXP Semiconductors Product data sheet PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION TYPE NUMBER BC856 BC857 BC858 PACKAGE NAME − − − DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3K* Top view handbook, halfpage BC856; BC857; BC858 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 SOT23 SOT23 2004 Jan 16 2 NXP Semiconductors Product data sheet PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC856 BC857 BC858 VCEO collector-emitter voltage BC856 BC857 BC858 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BC856; BC857; BC858 MIN. − − − − − − − − − − − −65 − −65 MAX. −80 −50 −30 −65 −45 −30 −5 −100 −200 −200 250 +150 150 +150 V V V V V V V UNIT mA mA mA mW °C °C °C TYPICAL 500 UNIT K/W 2004 Jan 16 3 NXP Semiconductors Product data sheet PNP general purpose transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C VCEsat collector-emitter saturation voltage VEB = −5 V; IC = 0 IC = −2 mA; VCE = −5 V BC856; BC857; BC858 MIN. − − − 125 125 125 220 420 TYP. −1 − − − − − − − −75 −250 −700 −850 −650 − 4.5 − 2 MAX. −15 −4 −100 475 800 250 475 800 −300 −650 − − −750 −820 − − 10 UNIT nA μA nA IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 mV mV mV mV mV mV pF MHz dB VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V VCB = −10 V; IE = Ie = 0; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz −600 − − 100 − Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 16 4 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 500 MGT711 handbook, halfpage hFE 400 (1) − 1200 VBE (mV) − 1000 − 800 MGT712 (1) 300 (2) − 600 200 (2) − 400 100 (3) (3) − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT713 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 − 600 MGT714 (1) (2) (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 5 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 1000 MGT715 handbook, halfpage hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT716 (1) 600 (1) (2) − 600 − 400 − 200 (3) 400 (2) 200 (3) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT717 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT718 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857B; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 6 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 1000 MGT719 handbook, halfpage (1) hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT720 (1) 600 (2) (2) − 600 − 400 400 (3) (3) 200 − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857C; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT721 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT722 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 7 NXP Semiconductors Product data sheet PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads BC856; BC857; BC858 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Jan 16 8 NXP Semiconductors Product data sheet PNP general purpose transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BC856; BC857; BC858 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Jan 16 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp10 Date of release: 2004 Jan 16 Document order number: 9397 750 12397