BCP52

BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 08 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Package NXP BCP52 BCX52 [1] Type number[1] NPN complement JEITA SC-73 SC-62 JEDEC TO-243 BCP55 BCX55 SOT223 SOT89 Valid for all available selection groups. 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I I I I Linear voltage regulators High-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter collector-emitter voltage collector current peak collector current DC current gain hFE selection -10 hFE selection -16 single pulse; tp ≤ 1 ms VCE = −2 V; IC = −150 mA VCE = −2 V; IC = −150 mA VCE = −2 V; IC = −150 mA Conditions open base Min 63 63 100 Typ Max −60 −1 −1.5 250 160 250 Unit V A A NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 2. Pinning information Table 3. Pin SOT223 1 2 3 4 base collector emitter collector 1 2 3 3 sym028 Pinning Description Simplified outline Symbol 4 1 2, 4 SOT89 1 2 3 emitter collector base 3 2 1 3 1 006aaa231 2 3. Ordering information Table 4. Ordering information Package Name BCP52 BCX52 [1] Type number[1] Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 SC-73 SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads Valid for all available selection groups. 4. Marking Table 5. BCP52 BCP52-10 BCP52-16 BCX52 BCX52-10 BCX52-16 Marking codes Marking code BCP52 BCP52/10 BCP52/16 AE AG AM Type number BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 2 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation BCP52 BCX52 single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] [1] [2] [3] Conditions open emitter open base open collector Min - Max −60 −60 −5 −1 −1.5 −0.2 Unit V V V A A A −65 −65 0.65 1 0.5 0.9 1.3 150 +150 +150 W W W W W °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 3 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 1.6 Ptot (W) 1.2 (1) 006aaa220 1.6 Ptot (W) 1.2 006aaa221 (1) (2) 0.8 (2) 0.8 (3) 0.4 0.4 0 −75 −25 0 25 75 125 175 Tamb (°C) 0 −75 −25 0 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient BCP52 BCX52 Conditions in free air [1] [2] [1] [2] [3] Min Typ Max Unit - - 190 125 230 135 95 K/W K/W K/W K/W K/W Rth(j-sp) thermal resistance from junction to solder point BCP52 BCX52 17 20 K/W K/W [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 4 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.2 0.1 10 0.05 0.02 0.01 1 0 0.75 0.33 006aaa223 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 103 Zth(j-a) (K/W) 102 duty cycle = 006aaa817 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 10 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 5 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 0 0.75 0.33 006aaa224 10 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 103 Zth(j-a) (K/W) 102 006aaa225 duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0.75 10 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 6 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 103 Zth(j-a) (K/W) 102 duty cycle = 006aaa818 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 10 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = −30 V; IE = 0 A; VCB = −30 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A VCE = −2 V IC = −5 mA IC = −150 mA IC = −500 mA DC current gain hFE selection -10 hFE selection -16 VCEsat VBE Cc fT [1] [1] Min - Typ - Max −100 −10 −100 Unit nA µA nA IEBO hFE 63 63 40 63 100 [1] 15 145 250 160 250 −0.5 −1 V V pF MHz VCE = −2 V IC = −150 mA IC = −150 mA IC = −500 mA; IB = −50 mA VCE = −2 V; IC = −500 mA VCB = −10 V; IE = ie = 0 A; f = 1 MHz VCE = −5 V; IC = −50 mA; f = 100 MHz collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency - [1] Pulse test: tp ≤ 300 µs; δ = 0.02. BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 7 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 300 (1) 006aaa226 −1.6 IC (A) −1.2 006aaa230 IB (mA) = −45 −40.5 −36 −31.5 −27 −22.5 −18 −13.5 hFE 200 (2) −0.8 −9 100 (3) −4.5 −0.4 0 −10−1 −1 −10 −102 −103 −104 I C (mA) 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) VCE = −2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 8. DC current gain as a function of collector current; typical values −1200 VBE (mV) −1000 (1) Fig 9. Collector current as a function of collector-emitter voltage; typical values −103 006aaa228 006aaa227 VCEsat (mV) − 800 (2) −102 − 600 (3) (2) (1) − 400 (3) − 200 −10−1 −1 −10 −102 −103 −104 I C (mA) −10 −10−1 −1 −10 −102 −103 −104 I C (mA) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. Base-emitter voltage as a function of collector current; typical values Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 8 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 8. Package outline 6.7 6.3 3.1 2.9 4 1.1 0.7 7.3 6.7 3.7 3.3 4.6 4.4 1.8 1.4 1.8 1.5 1.6 1.4 2.6 2.4 4.25 3.75 1.2 0.8 0.48 0.35 3 0.44 0.23 06-08-29 1 1 2.3 4.6 Dimensions in mm 2 3 0.8 0.6 0.32 0.22 04-11-10 0.53 0.40 1.5 Dimensions in mm 2 3 Fig 12. Package outline SOT223 (SC-73) Fig 13. Package outline SOT89 (SC-62/TO-243) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package BCP52 BCX52 SOT223 SOT89 Description 8 mm pitch, 12 mm tape and reel 8 mm pitch, 12 mm tape and reel; T1 8 mm pitch, 12 mm tape and reel; T3 [1] [2] [3] [4] [3] [4] Packing quantity 1000 -115 -115 -120 4000 -135 -135 - For further information and the availability of packing methods, see Section 12. Valid for all available selection groups. T1: normal taping T3: 90° rotated taping BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 9 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 10. Revision history Table 10. Revision history Release date 20080225 Data sheet status Product data sheet Change notice Supersedes BC638_BCP52_BCX52_7 Document ID BCP52_BCX52_8 Modifications: BC638_BCP52_BCX52_7 BC638_BCP52_BCX52_6 • • Type numbers BC638 and BC638-16 have been removed Figure 9: amended Product data sheet Product data sheet BC638_BCP52_BCX52_6 BC636_638_640_5 BCP51_52_53_5 BCX51_52_53_4 BC636_638_640_4 BCP51_52_53_4 BCX51_52_53_3 20070626 20060329 BC636_638_640_5 BCP51_52_53_5 BCX51_52_53_4 20041011 20030206 20011010 Product specification Product specification Product specification - BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 10 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BCP52_BCX52_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 25 February 2008 11 of 12 NXP Semiconductors BCP52; BCX52 60 V, 1 A PNP medium power transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 February 2008 Document identifier: BCP52_BCX52_8