BCV65
NPN/PNP general-purpose transistor
Rev. 4 — 27 July 2010 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low current (max. 100 mA) Low voltage (max. 30 V) Matched pair AEC-Q101 qualified Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 75 Typ Max 30 100 800 Unit V mA
Per transistor; for the PNP transistor with negative polarity
2. Pinning information
Table 2. Pin 1, 3 2 4 Pinning Description collector common base common emitter
2 1 2 4 4 3 1
Simplified outline
Graphic symbol
3
006aab229
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
3. Ordering information
Table 3. Ordering information Package Name BCV65 Description plastic surface-mounted package; 4 leads Version SOT143B Type number
4. Marking
Table 4. BCV65
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] 97*
Type number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO IC ICM IBM Per device Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C −65 −65 250 150 +150 +150 mW °C °C °C Parameter collector-base voltage collector-emitter voltage collector current peak collector current peak base current Conditions open emitter open base Min Max 30 30 100 200 200 Unit V V mA mA mA Per transistor; for the PNP transistor with negative polarity
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
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NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
[1]
Thermal characteristics Parameter Conditions
[1]
Min -
Typ -
Max 500
Unit K/W
thermal resistance from junction in free air to ambient
Device mounted on an FR4 Printed-Circuit Board (PCB).
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current DC current gain collector-emitter saturation voltage Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VCE = 5 V; IC = 2 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA VBEsat base-emitter saturation IC = 10 mA; voltage IB = 0.5 mA IC = 100 mA; IB = 5 mA VBE base-emitter voltage IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V
[1] [2]
[1]
Min 75 580 -
Typ 90 250 700 900 650 -
Max 15 5 800 300 650 750 820
Unit nA μA
Per transistor; for the PNP transistor with negative polarity
hFE VCEsat
mV mV mV mV mV mV
[1]
[2] [2]
VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature.
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
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NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
600 hFE 500
(1)
mgt727
1200 VBE (mV) 1000
(1)
mgt728
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0 10−1
1
10
102 I C (mA)
103
0 10−2
10−1
1
10
102 103 I C (mA)
VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C
Fig 1.
TR1 (NPN): DC current gain as a function of collector current; typical values
104
mgt729
Fig 2.
TR1 (NPN): Base-emitter voltage as a function of collector current; typical values
mgt730
1200 VBEsat (mV) 1000
(1)
VCEsat (mV) 103
800
(2)
600
(3)
102
(1) (3) (2)
400
200
10 10−1
1
10
102 I C (mA)
103
0 10−1
1
10
102 I C (mA)
103
IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C
Fig 3.
TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 4.
TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
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NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
1000 hFE 800
mgt715
−1200 VBE (mV) −1000 −800
(1)
mgt716
600
(1)
(2)
−600 −400 −200
(3)
400
(2)
200
(3)
0 −10−2
−10−1
−1
−10
−102 −103 IC (mA)
0 −10−2
−10−1
−1
−10
−102 −103 IC (mA)
VCE = −5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C
Fig 5.
TR2 (PNP): DC current gain as a function of collector current; typical values
mgt717
Fig 6.
TR2 (PNP): Base-emitter voltage as a function of collector current; typical values
mgt718
−104 VCEsat (mV) −103
−1200 VBEsat (mV) −1000
(1)
−800
(2)
−600
(3)
−102
(1)
−400 −200
(3) (2)
−10 −10−1
−1
−10
−102 IC (mA)
−103
0 −10−1
−1
−10
−102 IC (mA)
−103
IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C
Fig 7.
TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 8.
TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
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NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
9. Package outline
3.0 2.8 1.9 4 3 0.45 0.15
1.1 0.9
2.5 2.1
1.4 1.2
1 0.88 0.78 1.7 Dimensions in mm
2 0.48 0.38 0.15 0.09
04-11-16
Fig 9.
Package outline SOT143B
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCV65
[1]
Package SOT143B
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
For further information and the availability of packing methods, see Section 14.
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
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BCV65
NPN/PNP general-purpose transistor
11. Soldering
3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands solder resist 2 3 solder paste occupied area 0.7 0.6 Dimensions in mm
0.7 0.6 (3×) (3×)
0.75 0.9 1
0.95
sot143b_fr
Fig 10. Reflow soldering footprint SOT143B
4.45 2.2 1.2 (3×)
1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425
preferred transport direction during soldering 1 1.2
sot143b_fw
Fig 11. Wave soldering footprint SOT143B
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
7 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
12. Revision history
Table 9. BCV65 v.4 Modifications: Revision history Release date 20100727 Data sheet status Product data sheet Change notice Supersedes BCV65_3 Document ID
• • • • • • • • • • •
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1 “Product profile”: amended Section 3 “Ordering information”: added Section 4 “Marking”: updated Figure 1, 2, 3, 4, 5, 6, 7 and 8: added Figure 9: superseded by minimized package outline drawing Section 8 “Test information”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated Product specification Product specification BCV65_CNV_2 -
BCV65_3 BCV65_CNV_2
19990422 19970422
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
8 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
© NXP B.V. 2010. All rights reserved.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BCV65
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Product data sheet
Rev. 4 — 27 July 2010
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NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
10 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 July 2010 Document identifier: BCV65