BCW29

DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13 NXP Semiconductors Product data sheet PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. MARKING TYPE NUMBER BCW29 BCW30 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER BCW29 BCW30 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = −2 mA open collector − − − − − − − PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) C1* C2* Top view handbook, halfpage BCW29; BCW30 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline SOT23 and symbol. VERSION SOT23 MIN. MAX. −32 −32 −5 −100 −200 −200 250 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C −65 − −65 2004 Jan 13 2 NXP Semiconductors Product data sheet PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW29 BCW30 DC current gain BCW29 BCW30 VCEsat VBEsat VBE Cc fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −50 mA; IB = −2.5 mA IC = −10 mA; IB = −0.5 mA IC = −50 mA; IB = −2.5 mA IC = −2 mA; VCE = −5 V IE = Ie = 0; VCB = −10 V; f = 1 MHz IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = −2 mA; VCE = −5 V CONDITIONS IE = 0; VCB = −32 V IE = 0; VCB = −32 V; Tj = 100 °C IC = 0; VEB = −5 V IC = −10 μA; VCE = −5 V − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BCW29; BCW30 VALUE 500 UNIT K/W MIN. − − − TYP. − − − 90 150 − − −80 −150 −720 −810 − 4.5 − − MAX. −100 −10 −100 − − 260 500 −300 − − − −750 − − 10 UNIT nA μA nA 120 215 − − − − −600 − − mV mV mV mV mV pF MHz dB IC = −10 mA; VCE = −5 V; f = 100 MHz 100 2004 Jan 13 3 NXP Semiconductors Product data sheet PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads BCW29; BCW30 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Jan 13 4 NXP Semiconductors Product data sheet PNP general purpose transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BCW29; BCW30 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Jan 13 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp6 Date of release: 2004 Jan 13 Document order number: 9397 750 12403