BF199

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF199 NPN medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium frequency transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 25 V). APPLICATIONS • Output stage of a vision IF amplifier. DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage BF199 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 2 3 3 1 2 MAM258 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C VCE = 10 V; IC = 7 mA VCE = 10 V; IC = 5 mA; f = 100 MHz open base CONDITIONS open emitter − − − − 38 − MIN. − − − − − 550 TYP. MAX. 40 25 25 500 − − MHz UNIT V V mA mW ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF199 SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Nov 08 2 NXP Semiconductors Product data sheet NPN medium frequency transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VBE Cre fT PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain base-emitter voltage feedback capacitance transition frequency CONDITIONS VCB = 40 V; IE = 0 A VEB = 4 V; IC = 0 A VCE = 10 V; IC = 7 mA VCE = 10 V; IC = 7 mA VCB = 10 V; IC = 0 A; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz MIN. − − 38 − − − TYP. − − − 775 − 550 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. 40 25 4 25 25 500 +150 150 +150 BF199 UNIT V V V mA mA mW °C °C °C UNIT K/W MAX. 100 100 − 925 0.5 − UNIT nA nA mV pF MHz 2004 Nov 08 3 NXP Semiconductors Product data sheet NPN medium frequency transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BF199 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 2004 Nov 08 4 NXP Semiconductors Product data sheet NPN medium frequency transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BF199 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Nov 08 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp6 Date of release: 2004 Nov 08 Document order number: 9397 750 13577