DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
December 1997
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
BF510 to 513
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
3
g
PINNING - SOT23
1
= gate
2
= drain
3
= source
1
d
s
2
Top view
MAM385
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
20
V
Drain current (DC or average)
ID
max.
30
mA
Ptot
max.
250
mW
Total power dissipation
up to Tamb = 40 C
BF510
511
512
0.7
2.5
6
10 mA
3.0
7.0
12
18 mA
yfs
2.5
4
6
7 mS
VDS = 10 V; VGS = 0
Crs
typ.
0.3
0.3
pF
VDS = 10 V; ID = 5 mA
Crs
typ.
0.3
0.3 pF
VDS = 10 V; VGS = 0
F
typ.
1.5
1.5
dB
VDS = 10 V; ID = 5 mA
F
typ.
1.5
1.5 dB
Drain current
VDS = 10 V; VGS = 0
IDSS
513
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS; f = 100 MHz
December 1997
2
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
20 V
Drain-gate voltage (open source)
VDGO
max.
20 V
Drain current (DC or average)
ID
max.
30 mA
Gate current
IG
max.
10 mA
Total power dissipation up to Tamb = 40 C (note 1)
Ptot
max.
250 mW
Storage temperature range
Tstg
65 to 150 C
Junction temperature
Tj
max.
150 C
Rth j-a
=
430 K/W
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
STATIC CHARACTERISTICS
Tamb = 25 C
BF510
511
512
513
Gate cut-off current
VGS = 0.2 V; VDS = 0
IGSS
10
10
10
10 nA
V(BR)GDO
20
20
20
20 V
IDSS
<
0.7
3.0
2.5
7.0
6
12
10 mA
18 mA
V(P)GS
typ.
0.8
1.5
2.2
3 V
Gate-drain breakdown voltage
IS = 0; ID = 10 A
Drain current
VDS = 10 V; VGS = 0
Gate-source cut-off voltage
ID = 10 A; VDS = 10 V
December 1997
3
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
VDS = 10 V; VGS = 0; Tamb = 25 C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF512 and BF513
y-parameters (common source)
Input capacitance at f = 1 MHz
Cis
Input conductance at f = 100 MHz
gis
typ.
Feedback capacitance at f = 1 MHz
Crs
Transfer admittance at f = 1 kHz
yfs
VGS = 0 instead of ID = 5 mA
BF510
511
512
513
5
5
5
5 pF
100
90
60
50 S
typ.
0.4
0.4
0.4
0.4 pF
0.5
0.5
0.5
0.5 pF
2.5
4.0
4.0
3.5 mS
yfs
Transfer admittance at f = 100 MHz
yfs
typ.
6.0
7.0 mS
3.5
5.5
5.0
5.0 mS
Output capacitance at f = 1 MHz
Cos
3
3
3
3 pF
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
gos
60
80
100
120 S
gos
typ.
35
55
70
90 S
F
typ.
1.5
1.5
1.5
1.5 dB
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS;
f = 100 MHz
MDA275
1.5
MDA276
10
|yfs|
handbook, halfpage
handbook, halfpage
Crs
BF513
(mS)
8
(pF)
BF511
BF512
1
6
BF510
4
0.5
typ
2
0
0
Fig.2
4
8
12
0
16
20
VDS (V)
0
VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 C.
December 1997
Fig.3
4
5
10
ID (mA)
15
VDS = 10 V; f = 1 kHz; Tamb = 25 C; typical
values.
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
40
0
80
120
200
160
Tamb (°C)
Fig.4 Power derating curve.
December 1997
5
BF510 to 513
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
December 1997
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
6
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
December 1997
7
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
December 1997
BF510 to 513
8
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provides High Performance Mixed Signal and Standard Product
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp9
Date of release: December 1997
