BF862_00

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET FEATURES • High transition frequency for excellent sensitivity in AM car radios • High transfer admittance. APPLICATIONS • Pre-amplifiers in AM car radios. handbook, halfpage 2 BF862 PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. 3 Top view Marking code: 2Ap. MAM036 g d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Ts ≤ 90 °C CONDITIONS MIN. − −0.3 10 − 35 − TYP. − −0.8 − − 45 − MAX. 20 −1.2 25 300 − 150 UNIT V V mA mW mS °C 2000 Jan 05 2 Philips Semiconductors Product specification N-channel junction FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj Note 1. Main heat transfer is via the gate lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the gate lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 200 PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation storage temperature junction temperature Ts ≤ 90 °C; note 1 CONDITIONS MIN. − − − − − − −65 − BF862 MAX. 20 20 −20 40 10 300 +150 150 UNIT V V V mA mA mW °C °C UNIT K/W handbook, halfpage 400 MCD808 Ptot (mW) 300 200 100 0 0 40 80 120 Ts (°C) 160 Fig.2 Power derating curve. 2000 Jan 05 3 Philips Semiconductors Product specification N-channel junction FET STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)GSS VGS VGSoff IGSS IDSS PARAMETER gate-source breakdown voltage gate-source forward voltage gate-source cut-off voltage reverse gate current drain-source current CONDITIONS IGS = −1 µA; VDS = 0 VDS = 0; IG = 1 mA VDS = 8 V; ID = 1 µA VGS = −15 V; VDS = 0 VGS = 0; VDS = 8 V − −0.3 − 10 MIN. −20 − − −0.8 − − TYP. BF862 MAX. − 1 −1.2 −1 25 UNIT V V V nA mA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL yfs gos Ciss Crss en fT PARAMETER common source forward transfer admittance common source output conductance input capacitance reverse transfer capacitance equivalent noise input voltage transition frequency CONDITIONS Tj = 25 °C Tj = 25 °C f = 1 MHz f = 1 MHz f = 100 kHz MIN. 35 − − − − − TYP. 45 180 10 1.9 0.8 715 MAX. − 400 − − − − UNIT mS µS pF pF nV/√Hz MHz 2000 Jan 05 4 Philips Semiconductors Product specification N-channel junction FET BF862 handbook, halfpage 40 MCD809 handbook, halfpage 300 MCD810 IDSS (mA) 30 gos (µS) 200 20 100 10 0 0 −0.5 −1 VGSoff (V) −1.5 0 0 10 20 IDSS (mA) 30 VDS = 8 V; Tj = 25 °C. VDS = 8 V; Tj = 25 °C. Fig.4 Fig.3 Drain saturation current as a function of gate-source cut-off voltage; typical values. Common-source output conductance as a function of drain saturation current; typical values. handbook, halfpage 60 MCD811 handbook, halfpage 60 MCD812 yfs (mS) 50 yfs (mS) 40 40 20 30 20 0 10 20 IDSS (mA) 30 0 0 10 20 ID (mA) 30 VDS = 8 V; Tj = 25 °C. VDS = 8 V; Tj = 25 °C. Fig.5 Forward transfer admittance as a function of drain saturation current; typical values. Fig.6 Forward transfer admittance as a function of drain current; typical values. 2000 Jan 05 5 Philips Semiconductors Product specification N-channel junction FET BF862 handbook, halfpage 30 MCD813 handbook, halfpage 20 MCD814 ID (mA) 20 max ID (mA) VGS = 0 V 16 −0.1 V 12 −0.2 V typ 8 −0.3 V −0.4 V −0.5 V 10 min 4 0 −1 −0.8 −0.6 −0.4 −0.2 VGS (V) 0 0 0 4 8 VDS (V) 12 VDS = 8 V; Tj = 25 °C. VDS = 8 V; Tj = 25 °C. Fig.7 Drain current as a function of gate-source voltage; typical values. Fig.8 Drain current as a function of drain-source voltage; typical values. −104 handbook, halfpage IG (nA) −102 ID = 20 mA MCD815 10 mA 1 mA 0.1 mA handbook, halfpage 12 MCD816 C (pF) 8 −1 Cis −10−2 IGSS 4 Crs −10−4 0 5 10 15 20 25 VDG (V) 0 −8 −6 −4 −2 VGS (V) 0 VDS = 8 V; f = 1 MHz; Tj = 25 °C. VDS = 8 V; Tj = 25 °C. Fig.9 Gate current as a function of drain-gate voltage; typical values. Fig.10 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. 2000 Jan 05 6 Philips Semiconductors Product specification N-channel junction FET BF862 102 handbook, halfpage yis (mS) 10 MCD817 handbook, halfpage 10 MCD818 −103 yrs (mS) bis yrs ϕrs (deg) 1 1 ϕrs −102 10−1 gis 10−2 10−1 1 10 102 103 10−1 10−1 1 10 102 −10 103 f (MHz) f (MHz) VDS = 8 V; VGS = 0; Tamb = 25 °C. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. Fig.11 Common-source input admittance as a function of frequency; typical values. Fig.12 Common-source reverse admittance as a function of frequency; typical values. 102 handbook, halfpage yfs yfs (mS) ϕfs 10 MCD819 −102 102 handbook, halfpage yos (mS) 10 bos MCD820 ϕfs (deg) −10 1 gos 1 10−1 1 10 102 f (MHz) −1 103 10−1 10−1 1 10 102 f (MHz) 103 VDS = 8 V; VGS = 0; Tamb = 25 °C. VDS = 8 V; VGS = 0; Tamb = 25 °C. Fig.13 Common-source forward transfer admittance as a function of frequency; typical values. Fig.14 Common-source output admittance as a function of frequency; typical values. 2000 Jan 05 7 Philips Semiconductors Product specification N-channel junction FET PACKAGE OUTLINE Plastic surface mounted package; 3 leads BF862 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2000 Jan 05 8 Philips Semiconductors Product specification N-channel junction FET DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BF862 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Jan 05 9 Philips Semiconductors Product specification N-channel junction FET NOTES BF862 2000 Jan 05 10 Philips Semiconductors Product specification N-channel junction FET NOTES BF862 2000 Jan 05 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125004/03/pp12 Date of release: 2000 Jan 05 Document order number: 9397 750 06562