BF908

BF908; BF908R Dual-gate MOS-FETs Rev. 03 — 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Dual-gate MOS-FETs FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Fig.1 Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. handbook, halfpage handbook, halfpage BF908; BF908R 4 3 g2 g 1 d 1 Top view 2 s,b MAM039 BF908 marking code: %M1. Simplified outline (SOT143) and symbol; BF908. d 4 g2 g1 3 PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Top view 2 1 s,b MAM040 BF908R marking code: %M2. Fig.2 Simplified outline (SOT143R) and symbol; BF908R. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − 36 2.4 20 − MIN. − − − − 43 3.1 30 1.5 TYP. MAX. 12 40 200 150 50 4 45 2.5 UNIT V mA mW °C mS pF pF dB Rev. 03 - 14 November 2007 2 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID ±IG1 ±IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF908 BF908R Tstg Tj Note 1. Device mounted on a printed-circuit board. storage temperature operating junction temperature see Fig.3; note 1 up to Tamb = 50 °C up to Tamb = 40 °C − − −65 − CONDITIONS − − − − BF908; BF908R MIN. MAX. 12 40 10 10 200 200 +150 150 V UNIT mA mA mA mW mW °C °C handbook, halfpage 250 MRC275 P tot (mW) 200 BF908 150 BF908R 100 50 0 0 50 100 150 200 o Tamb ( C) Fig.3 Power derating curves. Rev. 03 - 14 November 2007 3 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL Rth j-a BF908 BF908R Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BF908; BF908R VALUE 500 550 UNIT K/W K/W MIN. 8 8 TYP. − − − − 15 − − MAX. 20 20 2 1.5 27 50 50 UNIT V V V V mA nA nA ±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage −V(P)G1-S −V(P)G2-S IDSS ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate 1 cut-off current gate 2 cut-off current VG2-S = 4 V; VDS = 8 V; ID = 20 µA − VG1-S = 4 V; VDS = 8 V; ID = 20 µA − VG2-S = 4 V; VDS = 8 V; VG1-S = 0 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V 3 − − DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance reverse transfer capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 °C; f = 1 MHz MIN. 36 2.4 1.2 1.2 20 − − TYP. 43 3.1 1.8 1.7 30 0.6 1.5 MAX. 50 4 2.5 2.2 45 1.2 2.5 UNIT mS pF pF pF fF dB dB Rev. 03 - 14 November 2007 4 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R handbook, halfpage 40 MRC281 MRC282 ID (mA) 30 VG2-S = 4 V 3V 2V handbook, halfpage 30 VG1-S = 0.3 V ID (mA) 0.2 V 20 20 1.5 V 1V 0.1 V 0V 0.5 V 10 10 −0.1 V −0.2 V 0V 0 −0.6 −0.4 −0.2 0 −0.3 V 0 4 8 12 VDS (V) 16 0 0.2 0.4 VG1-S (V) 0.6 VDS = 8 V; Tj = 25 °C. VG2-S = 4 V; Tj = 25 °C. Fig.4 Transfer characteristics; typical values. Fig.5 Output characteristics; typical values. 50 Yfs (mS) 40 MRC280 4V 3V 2V 1.5 V 60 Yfs (mS) MRC276 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 25 I D (mA) 40 0 40 80 120 160 T j (o C) VDS = 8 V; Tj = 25 °C. VDS = 8 V; VG2-S = 4 V; ID = 15 mA. Fig.6 Forward transfer admittance as a function of drain current; typical values. Fig.7 Forward transfer admittance as a function of junction temperature; typical values. Rev. 03 - 14 November 2007 5 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs Table 1 f (MHz) Scattering parameters s11 MAGNITUDE (ratio) ANGLE (deg) s21 MAGNITUDE (ratio) ANGLE (deg) s12 MAGNITUDE (ratio) ANGLE (deg) BF908; BF908R s22 MAGNITUDE (ratio) ANGLE (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 50 100 200 300 400 500 600 700 800 900 1 000 0.998 0.994 0.979 0.962 0.939 0.914 0.892 0.865 0.837 0.811 0.785 −5.1 −10.4 −20.8 −30.3 −40.1 −49.1 −57.1 −64.4 −71.6 −78.1 −84.5 −5.3 −10.9 −21.6 −31.7 −41.7 −51.1 −59.1 −66.8 −73.9 −80.7 −87.0 3.537 3.502 3.450 3.318 3.234 3.093 2.912 2.774 2.616 2.479 3.329 173.5 167.7 154.9 143.7 131.9 120.7 111.1 101.0 91.4 81.9 72.5 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.003 98.2 88.8 74.6 69.5 65.6 64.4 63.1 65.2 70.8 87.4 108.0 0.996 0.994 0.987 0.983 0.980 0.974 0.969 0.966 0.965 0.965 0.966 −2.4 −4.9 −9.5 −13.9 −18.5 −22.8 −27.0 −31.2 −35.4 −39.4 −43.7 −2.4 −5.0 −9.7 −14.2 −18.8 −23.2 −27.4 −31.6 −35.9 −40.0 −44.2 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 50 100 200 300 400 500 600 700 800 900 1 000 Table 2 0.998 0.994 0.976 0.957 0.934 0.907 0.885 0.851 0.826 0.797 0.773 Noise data f (MHz) Fmin (dB) Γopt (ratio) (deg) rn 3.983 3.943 3.878 3.722 3.614 3.446 3.240 3.072 2.891 2.733 2.569 173.4 167.5 154.7 143.3 131.6 120.4 110.9 100.9 91.3 81.9 72.8 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.004 95.5 93.6 74.3 70.0 63.5 62.2 59.6 64.8 67.8 85.0 102.9 0.994 0.991 0.984 0.979 0.975 0.969 0.964 0.961 0.959 0.958 0.958 VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 800 1.50 0.720 56.7 0.580 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 800 1.50 0.700 59.2 0.520 Rev. 03 - 14 November 2007 6 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs PACKAGE OUTLINES BF908; BF908R handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.8 SOT143. handbook, full pagewidth 0.40 0.25 0.150 0.090 3 0.1 max 10 max o 3.0 2.8 1.9 4 B A 0.2 M A 10 max o 1.4 1.2 2.5 max 2 1.1 max 0.48 0.38 1.7 0.1 M B 1 0.88 0.78 30 max o MBC844 TOP VIEW Dimensions in mm. Fig.9 SOT143R. Rev. 03 - 14 November 2007 7 of 9 NXP Semiconductors BF908; BF908R Dual-gate MOS-FETs Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 03 - 14 November 2007 8 of 9 NXP Semiconductors BF908; BF908R Dual-gate MOS-FETs Revision history Revision history Document ID BF908-R_N_3 Modifications: BF908-R_2 BF908R_1 Release date 20071114 Data sheet status Product data sheet Product specification Change notice Supersedes BF908-R_2 BF908R_1 - • Fig. 1 and 2 on page 2; Figure note changed 19960730 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 November 2007 Document identifier: BF908-R_N_3