BF908; BF908R
Dual-gate MOS-FETs
Rev. 03 — 14 November 2007 Product data sheet
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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Fig.1 Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
handbook, halfpage
handbook, halfpage
BF908; BF908R
4
3 g2 g 1
d
1
Top view
2 s,b
MAM039
BF908 marking code: %M1.
Simplified outline (SOT143) and symbol; BF908.
d 4 g2 g1
3
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION
Top view
2
1 s,b
MAM040
BF908R marking code: %M2.
Fig.2
Simplified outline (SOT143R) and symbol; BF908R.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − 36 2.4 20 − MIN. − − − − 43 3.1 30 1.5 TYP. MAX. 12 40 200 150 50 4 45 2.5 UNIT V mA mW °C mS pF pF dB
Rev. 03 - 14 November 2007
2 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID ±IG1 ±IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF908 BF908R Tstg Tj Note 1. Device mounted on a printed-circuit board. storage temperature operating junction temperature see Fig.3; note 1 up to Tamb = 50 °C up to Tamb = 40 °C − − −65 − CONDITIONS − − − −
BF908; BF908R
MIN.
MAX. 12 40 10 10 200 200 +150 150 V
UNIT mA mA mA mW mW °C °C
handbook, halfpage
250
MRC275
P tot (mW)
200
BF908 150 BF908R
100
50
0
0
50
100
150 200 o Tamb ( C)
Fig.3 Power derating curves.
Rev. 03 - 14 November 2007
3 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL Rth j-a BF908 BF908R Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BF908; BF908R
VALUE 500 550
UNIT K/W K/W
MIN. 8 8
TYP. − − − − 15 − −
MAX. 20 20 2 1.5 27 50 50
UNIT V V V V mA nA nA
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage −V(P)G1-S −V(P)G2-S IDSS ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate 1 cut-off current gate 2 cut-off current
VG2-S = 4 V; VDS = 8 V; ID = 20 µA − VG1-S = 4 V; VDS = 8 V; ID = 20 µA − VG2-S = 4 V; VDS = 8 V; VG1-S = 0 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V 3 − −
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance reverse transfer capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 °C; f = 1 MHz MIN. 36 2.4 1.2 1.2 20 − − TYP. 43 3.1 1.8 1.7 30 0.6 1.5 MAX. 50 4 2.5 2.2 45 1.2 2.5 UNIT mS pF pF pF fF dB dB
Rev. 03 - 14 November 2007
4 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
handbook, halfpage
40
MRC281
MRC282
ID (mA) 30
VG2-S = 4 V 3V 2V
handbook, halfpage
30
VG1-S = 0.3 V
ID (mA) 0.2 V 20
20
1.5 V 1V
0.1 V
0V
0.5 V 10
10
−0.1 V −0.2 V
0V 0 −0.6 −0.4 −0.2
0
−0.3 V 0 4 8 12 VDS (V) 16
0
0.2
0.4 VG1-S (V)
0.6
VDS = 8 V; Tj = 25 °C.
VG2-S = 4 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
50 Yfs (mS) 40
MRC280
4V 3V 2V 1.5 V
60 Yfs (mS)
MRC276
40 30 1V
20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 25 I D (mA) 40 0 40 80 120 160 T j (o C)
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; VG2-S = 4 V; ID = 15 mA.
Fig.6
Forward transfer admittance as a function of drain current; typical values.
Fig.7
Forward transfer admittance as a function of junction temperature; typical values.
Rev. 03 - 14 November 2007
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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
Table 1 f (MHz) Scattering parameters s11 MAGNITUDE (ratio) ANGLE (deg) s21 MAGNITUDE (ratio) ANGLE (deg) s12 MAGNITUDE (ratio) ANGLE (deg)
BF908; BF908R
s22 MAGNITUDE (ratio) ANGLE (deg)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 50 100 200 300 400 500 600 700 800 900 1 000 0.998 0.994 0.979 0.962 0.939 0.914 0.892 0.865 0.837 0.811 0.785 −5.1 −10.4 −20.8 −30.3 −40.1 −49.1 −57.1 −64.4 −71.6 −78.1 −84.5 −5.3 −10.9 −21.6 −31.7 −41.7 −51.1 −59.1 −66.8 −73.9 −80.7 −87.0 3.537 3.502 3.450 3.318 3.234 3.093 2.912 2.774 2.616 2.479 3.329 173.5 167.7 154.9 143.7 131.9 120.7 111.1 101.0 91.4 81.9 72.5 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.003 98.2 88.8 74.6 69.5 65.6 64.4 63.1 65.2 70.8 87.4 108.0 0.996 0.994 0.987 0.983 0.980 0.974 0.969 0.966 0.965 0.965 0.966 −2.4 −4.9 −9.5 −13.9 −18.5 −22.8 −27.0 −31.2 −35.4 −39.4 −43.7 −2.4 −5.0 −9.7 −14.2 −18.8 −23.2 −27.4 −31.6 −35.9 −40.0 −44.2
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 50 100 200 300 400 500 600 700 800 900 1 000 Table 2 0.998 0.994 0.976 0.957 0.934 0.907 0.885 0.851 0.826 0.797 0.773 Noise data f (MHz) Fmin (dB) Γopt (ratio) (deg) rn 3.983 3.943 3.878 3.722 3.614 3.446 3.240 3.072 2.891 2.733 2.569 173.4 167.5 154.7 143.3 131.6 120.4 110.9 100.9 91.3 81.9 72.8 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.004 95.5 93.6 74.3 70.0 63.5 62.2 59.6 64.8 67.8 85.0 102.9 0.994 0.991 0.984 0.979 0.975 0.969 0.964 0.961 0.959 0.958 0.958
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 800 1.50 0.720 56.7 0.580 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 800 1.50 0.700 59.2 0.520
Rev. 03 - 14 November 2007
6 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
PACKAGE OUTLINES
BF908; BF908R
handbook, full pagewidth
0.75 0.60
0.150 0.090 4 0.1 max 10 max
o
3.0 2.8 1.9 3
B A 0.2 M A B
10 max
o
1.4 1.2
2.5 max
1 1.1 max
o
2 0.1 M A B
30 max
0.88
0 0.1 1.7
0.48
0 0.1
MBC845
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090 3 0.1 max 10 max
o
3.0 2.8 1.9 4
B A 0.2 M A
10 max
o
1.4 1.2
2.5 max
2 1.1 max 0.48 0.38 1.7 0.1 M B
1 0.88 0.78
30 max
o
MBC844
TOP VIEW
Dimensions in mm.
Fig.9 SOT143R.
Rev. 03 - 14 November 2007
7 of 9
NXP Semiconductors
BF908; BF908R
Dual-gate MOS-FETs
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
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For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 03 - 14 November 2007
8 of 9
NXP Semiconductors
BF908; BF908R
Dual-gate MOS-FETs
Revision history
Revision history Document ID BF908-R_N_3 Modifications: BF908-R_2 BF908R_1 Release date 20071114 Data sheet status Product data sheet Product specification Change notice Supersedes BF908-R_2 BF908R_1 -
•
Fig. 1 and 2 on page 2; Figure note changed
19960730
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 November 2007 Document identifier: BF908-R_N_3