BFG25A

BFG25A/X NPN 5 GHz wideband transistor Rev. 04 — 27 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: %MU. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 − − − − GHz dB dB dB UNIT V V mA mW Rev. 04 - 27 November 2007 2 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Cre fT GUM F PARAMETER collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 0.5 mA; VCE = 1 V IC = ic = 0; VCB = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C Note MIN. − 50 − 3.5 − − − TYP. − 80 0.21 5 18 1.8 2 PARAMETER CONDITIONS VALUE 320 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 165 °C; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. 8 5 2 BFG25A/X MAX. V V V UNIT 6.5 32 150 175 mA mW °C °C UNIT K/W thermal resistance from junction to soldering point note 1 MAX. 50 200 0.3 − − − − UNIT µA pF GHz dB dB dB S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2  2  1 – S 11   1 – S 22   2 Rev. 04 - 27 November 2007 3 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MRC038 - 1 handbook,40 halfpage handbook, halfpage 100 MCD138 P tot (mW) 30 h FE 80 60 20 40 10 20 0 0 50 100 150 Ts (oC) 200 0 10 3 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. 0.3 handbook, halfpage C re (pF) 0.2 MCD139 handbook, halfpage 6 MCD140 fT (GHz) 4 0.1 2 0 0 2 4 VCB (V) 6 0 0 1 2 3 I C (mA) 4 IC = ic = 0; f = 1 MHz. VCE = 1 V; f = 500 MHz; Tamb = 25 °C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 04 - 27 November 2007 4 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 30 MCD141 handbook,20 halfpage MCD142 gain (dB) G UM gain (dB) 15 G UM 20 MSG MSG 10 10 5 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook,50 halfpage MCD143 gain (dB) 40 G UM handbook,50 halfpage MCD144 gain (dB) 40 G UM 30 30 20 MSG 10 20 MSG 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 IC = 0.5 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. IC = 1 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 04 - 27 November 2007 5 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 4 MCD145 handbook, halfpage 4 MCD146 F (dB) 3 f = 2 GHz 1 GHz 500 MHz 2 F (dB) 3 IC = 2 mA 1 mA 2 0.5 mA 1 1 0 10−1 1 IC (mA) 10 0 102 103 f (MHz) 104 VCE = 1 V. VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 6 dB 0.2 unstable regio n 4 dB 2.5 dB 5 10 10 * stability circle + j –j 0 0.2 0.5 MSG 15.6 dB 1 2 5 ∞ 10 5 OPT F = 1.9 dB min 0.2 14 dB 12 dB 0.5 1 2 MCD147 IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4. Fig.12 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 6 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 6 dB 2 stability circle OPT F min = 2 dB 10 10 0.2 a unst ble r egio n 4 dB 3 dB 5 + j –j * 0 0.2 0.5 MSG 12.4 dB 1 2 5 ∞ 10 5 11 dB 0.2 9 dB 0.5 1 2 MCD148 IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth stability circle 2 OPT F = 2.4 dB min 0.5 sta bl eg er ion 6 dB 4 dB 3 dB un 0.2 * 5 10 +j 0 –j 7.5 dB 0.2 6 dB 5 10 0.2 MSG 0.5 9 dB 1 2 5 10 ∞ 0.5 1 2 MCD149 IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9. Fig.14 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 7 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz ∞ 10 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. 2 MCD150 Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 1 2 3 4 5 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD151 Fig.16 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 27 November 2007 8 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD153 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 10 0.2 5 0.2 0.5 1 2 5 10 40 MHz ∞ 3 GHz 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. 2 MCD152 Fig.18 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 27 November 2007 9 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads BFG25A/X SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 04 - 27 November 2007 10 of 12 NXP Semiconductors BFG25A/X NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 27 November 2007 11 of 12 NXP Semiconductors BFG25A/X NPN 5 GHz wideband transistor Revision history Revision history Document ID BFG25AX_N_4 Modifications: BFG25AX_3 (9397 750 02767) BFG25AX_2 BFG25AX_1 Release date 20071127 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG25AX_3 BFG25AX_2 BFG25AX_1 - • Fig. 1 on page 2; Figure note changed 19971029 19950901 19921101 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2007 Document identifier: BFG25AX_N_4