BFG425W,135

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING  Very high power gain PIN DESCRIPTION  Low noise figure 1 emitter  High transition frequency 2 base  Emitter is thermal lead 3 emitter  Low feedback capacitance. 4 collector APPLICATIONS  RF front end handbook, halfpage  Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) 3 4  Radar detectors  Pagers 2  Satellite television tuners (SATV) Top view 1 MSB842  High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT   10 V VCBO collector-base voltage VCEO collector-emitter voltage open base   4.5 V IC collector current (DC)  25 30 mA mW open emitter Ptot total power dissipation Ts  103 C   135 hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 C 50 80 120 Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz  95  fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C  25  GHz Gmax maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C  20  dB F noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt 1.2  dB  CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 15 2 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter  10 V VCEO collector-emitter voltage open base  4.5 V VEBO emitter-base voltage open collector  1 V IC collector current (DC)  30 mA Ptot total power dissipation  135 mW Tstg storage temperature 65 +150 C Tj operating junction temperature  150 C Ts  103 C; note 1; see Fig.2 Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point MGG681 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 2010 Sep 15 3 VALUE UNIT 350 K/W NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 MIN. TYP. MAX. UNIT 10   V 4.5   V 1   V nA ICBO collector-base leakage current IE = 0; VCB = 4.5 V   15 hFE DC current gain IC = 25 mA; VCE = 2 V; see Fig.3 50 80 120 Cc collector capacitance IE = ie = 0; VCB = 2 V; f = 1 MHz  300  Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz  575  fF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4  95  fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5  25  GHz Gmax maximum power gain; note 1 IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8  20  dB insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8  17  dB noise figure IC = 2 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13  0.8  dB IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13  1.2  dB S 21 2 F fF PL1 output power at 1 dB gain compression IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2  12  dBm ITO third order intercept point IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2  22  dBm Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. 2010 Sep 15 4 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W MGG682 120 MGG683 200 handbook, halfpage handbook, halfpage Cre (fF) hFE 160 (1) (2) (3) 80 120 80 40 40 0 0 0 10 20 30 40 IC (mA) 0 1 (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. IC = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGG684 25 2 3 4 5 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. MGG685 30 handbook, halfpage handbook, halfpage fT (GHz) MSG (dB) 20 20 15 10 10 5 0 1 10 IC (mA) 0 102 0 10 VCE = 2 V; f = 2 GHz; Tamb = 25 C. VCE = 2 V; f = 900 MHz. Fig.5 Fig.6 Transition frequency as a function of collector current; typical values. 2010 Sep 15 5 20 30 IC (mA) 40 Maximum stable gain as a function of collector current; typical values. NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W MGG687 MGG686 30 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG 40 MSG Gmax 20 30 S21 Gmax 20 10 10 0 0 0 10 20 30 IC (mA) 40 VCE = 2 V; f = 2 GHz. Fig.7 102 10 103 104 IC = 25 mA; VCE = 2 V. Gain as a function of collector current; typical values. Fig.8 Gain as a function of frequency; typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 1.0 −90° MGG689 IC = 25 mA; VCE = 2 V; Zo = 50  Fig.9 Common emitter input reflection coefficient (S11); typical values. 2010 Sep 15 f (MHz) 6 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 50 40 30 20 0° 10 −135° −45° −90° MGG690 IC = 25 mA; VCE = 2 V. Fig.10 Common emitter forward transmission coefficient (S21); typical values. 90° handbook, full pagewidth 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 180° 0° 40 MHz −135° −45° −90° MGG691 IC = 25 mA; VCE = 2 V. Fig.11 Common emitter reverse transmission coefficient (S12); typical values. 2010 Sep 15 7 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 5 3 GHz 0.2 40 MHz 0.5 2 −135° −45° 1 1.0 −90° MGG692 IC = 25 mA; VCE = 2 V; Zo = 50  Fig.12 Common emitter output reflection coefficient (S22); typical values. Noise data VCE = 2 V; typical values. f (MHz) 900 2000 IC (mA) Fmin (dB) mag angle rn () 1 0.7 0.67 19.1 0.40 2 0.8 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 63.9 0.19 15 1.6 0.11 162.4 0.18 20 1.9 0.19 165.5 0.18 25 2.1 0.25 166.3 0.19 30 2.3 0.29 166.5 0.19 Fmin (dB) 2 (1) 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 162.1 0.20 20 2.2 0.17 155.5 0.20 25 2.5 0.22 152.2 0.21 30 2.8 0.27 150.8 0.25 2010 Sep 15 MGG688 3 handbook, halfpage (2) 1 0 0 10 20 IC (mA) 30 (1) VCE = 2 V; f = 2 GHz. (2) VCE = 2 V; f = 900 MHz. Fig.13 Minimum noise figure as a function of the collector current; typical values. 8 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W SPICE parameters for the BFG425W die SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT (2)(3) PARAMETER VALUE UNIT 1 IS 47.17 aA 39 Cbp 145 fF 2 BF 145.0  40 (2) Rsb1 25  Rsb2 19  3 NF 0.993  41 (3) 4 VAF 31.12 V Notes 5 IKF 304.0 mA 6 ISE 300.2 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 3.000  8 BR 11.37  9 NR 0.985  10 VAR 1.874 V 11 IKR 0.121 A 12 ISC 484.8 aA 13 NC 1.546  14 RB 14.41  15 IRB 0.000 A 16 RBM 6.175  17 RE 177.9 m 18 RC 1.780  XTB 1.500  (1) EG 1.110 eV 21 (1) XTI 3.000  22 CJE 310.9 fF 23 VJE 900.0 mV 24 MJE 0.346  25 TF 4.122 ps 19 (1) 20 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B and E. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C and E. C cb handbook, halfpage L1 B L2 B' C' E' C be C Cce MGD956 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz. 26 XTF 68.20  27 VTF 2.004 V 28 ITF 1.525 A 29 PTF 0.000 deg 30 CJC 137.7 fF 31 VJC 556.9 mV Cbe 80 fF 32 MJC 0.207  Ccb 2 fF 33 XCJC 0.500  Cce 80 fF 1.1 nH Fig.14 Package equivalent circuit SOT343R2. List of components (see Fig.14) DESIGNATION VALUE UNIT 34 (1) TR 0.000 ns L1 35 (1) CJS 667.5 fF L2 1.1 nH 36 (1) VJS 418.3 mV L3 (note 1) 0.25 nH 37 (1) MJS 0.239  38 FC 0.550  2010 Sep 15 Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 9 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 2010 Sep 15 EUROPEAN PROJECTION 10 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Limited warranty and liability  Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications  Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 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