BFG505

BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING DESCRIPTION PIN BFG505 1 2 3 4 collector base emitter emitter BFG505/X collector emitter base emitter handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 2 MSB014 MARKING TYPE NUMBER BFG505 BFG505/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 130 °C VCE = 6 V; IC = 5 mA VCB = 6 V; IC = ic = 0; f = 1 MHz VCE = 6 V; IC = 5 mA; f = 1 GHz VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 900 MHz VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz Γs = Γopt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 900 MHz Γs = Γopt; VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz Γs = Γopt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 2 GHz collector-emitter voltage RBE = 0 CONDITIONS open emitter CODE %ME %MK Top view Fig.1 Simplified outline SOT143B. MIN. − − − − 60 − − − − 16 − − − − − − − TYP. MAX. 20 15 18 150 250 − − − − − 1.7 2.1 − UNIT V V mA mW pF GHz dB dB dB dB dB dB 120 0.2 9 20 13 17 1.2 1.6 1.9 Rev. 04 - 22 November 2007 2 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts ≤ 130 °C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. 20 15 2.5 18 150 150 175 V V V mA mW °C °C UNIT handbook, halfpage 200 MRA638-1 Ptot (mW) 150 100 50 0 0 50 100 150 Ts (°C) 200 Fig.2 Power derating curve. Rev. 04 - 22 November 2007 3 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS VCB = 6 V; IE = 0 IC = 5 mA; VCE = 6 V; see Fig.3 IC = ic = 0 VEB = 0.5 V; f = 1 MHz VCB = 6 V; IE = ie = 0; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 5 mA; VCE = 6 V; f = 1 GHz; see Fig.5 IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Ic = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure Ic = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz PL1 ITO Notes output power at 1 dB gain compression third order intercept point IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz note 2 − 60 − − − − − − 16 − − − − − MIN. − 120 0.4 0.3 0.2 9 20 13 17 1.2 1.6 1.9 4 10 TYP. MAX. 50 250 − − − − − − − 1.7 2.1 − − − pF pF pF GHz dB dB dB dB dB dB dBm dBm UNIT nA S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) 2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz. Rev. 04 - 22 November 2007 4 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, halfpage 250 MRA639 handbook, halfpage 0.4 MRA640 hFE 200 Cre (pF) 0.3 150 0.2 100 0.1 50 0 10−3 10−2 10−1 1 10 102 IC (mA) 0 0 2 4 6 8 10 VCB (V) VCE = 6 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current. Fig.4 Feedback capacitance as a function of collector-base voltage. handbook, halfpage 12 MRA641 handbook, halfpage 25 MRA642 fT (GHz) 8 VCE = 6 V VCE = 3 V gain (dB) 20 GUM MSG 15 10 4 5 0 10−1 1 10 IC (mA) 102 0 0 4 8 IC (mA) VCE = 6 V; f = 900 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12 Tamb = 25 °C; f = 1 GHz. Fig.5 Transition frequency as a function of collector current. Fig.6 Gain as a function of collector current. Rev. 04 - 22 November 2007 5 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, halfpage 25 MRA643 MRA644 handbook, halfpage 50 gain (dB) 20 gain (dB) 40 MSG GUM 15 Gmax 30 MSG 10 GUM 20 5 10 0 0 4 8 IC (mA) VCE = 6 V; f = 2 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12 0 10 102 103 f (MHz) 104 VCE = 6 V; IC = 1.25 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of frequency. MRA645 handbook, halfpage 50 handbook, halfpage 5 MRA650 gain (dB) 40 GUM Fmin (dB) 4 f = 900 MHz 20 Gass (dB) 15 1000 MHz Gass 2000 MHz MSG 30 3 10 20 Gmax 2 2000 MHz 1000 MHz 900 MHz 500 MHz Fmin 5 10 1 0 0 10 102 103 f (MHz) 104 0 10−1 1 IC (mA) −5 10 VCE = 6 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 6 V. Fig.9 Gain as a function of frequency. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Rev. 04 - 22 November 2007 6 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X I andbook, halfpage C = 1.25 mA Fmin (dB) 4 5 MRA651 5 mA Gass 20 Gass (dB) 15 3 10 2 5 mA 1 1.25 mA 0 102 5 Fmin 0 103 f (MHz) −5 104 VCE = 6 V. Fig.11 Minimum noise figure and associated available gain as functions of frequency. handbook, full pagewidth pot. unst. region 135° 90° 1.0 1 45° 0.8 0.6 0.5 2 stability circle 0.2 Fmin = 1. 2 dB 0.2 0.5 1 ΓOPT F = 1.5 dB 2 5 F = 2 dB F = 3 dB 5 0.4 0.2 0° 0 180° 0 0.2 5 −135° 0.5 1 2 −45° MRA652 1.0 Zo = 50 Ω. VCE = 6 V; Ic = 1.25 mA; f = 900 MHz. −90° Fig.12 Noise circle figure. Rev. 04 - 22 November 2007 7 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth pot. unst. region 135° 90° 1.0 1 45° 0.8 0.6 ΓOPT 0.4 0.2 0.5 2 0.2 stability circle 180° 0 0.2 0.5 Fmin = 1. 9 dB F = 2.5 dB 1 2 F = 3 dB F = 4 dB 5 5 0° 0 0.2 5 −135° 0.5 1 2 −45° MRA653 1.0 −90° Zo = 50 Ω. VCE = 6 V; Ic = 1.25 mA; f = 2 000 MHz. Fig.13 Noise circle figure. Rev. 04 - 22 November 2007 8 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 1 2 5 40 MHz 0° 0 0.2 3 GHz 180° 0 0.2 0.5 5 0.2 5 −135° 0.5 1 2 −45° MRA646 1.0 VCE = 6 V; IC = 5 mA. Zo = 50 Ω. −90° Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90° 135° 45° 40 MHz 3 GHz 180° 15 12 9 6 3 0° −135° −45° −90° VCE = 6 V; IC = 5 mA. MRA647 Fig.15 Common emitter forward transmission coefficient (S21). Rev. 04 - 22 November 2007 9 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90° 135° 45° 3 GHz 180° 0.25 40 MHz 0.20 0.15 0.10 0.05 0° −135° −45° −90° VCE = 6 V; IC = 5 mA. MRA648 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 40 MHz 0.2 5 0° 0 0.2 3 GHz 5 −135° 0.5 1 2 −45° MRA649 1.0 VCE = 6 V; IC = 5 mA. Zo = 50 Ω. −90° Fig.17 Common emitter output reflection coefficient (S22). Rev. 04 - 22 November 2007 10 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 04 - 22 November 2007 11 of 13 NXP Semiconductors BFG505; BFG505/X NPN 9 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 22 November 2007 12 of 13 NXP Semiconductors BFG505; BFG505/X NPN 9 GHz wideband transistors Revision history Revision history Document ID BFG505_X_N_4 Modifications: BFG505_X_3 (9397 750 04348) BFG505XR_CNV_2 BFG505XR_1 Release date 20071122 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG505_X_3 BFG505XR_CNV_2 BFG505XR_1 - • Marking table on page 2; changed code 19981002 19950901 19921101 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 November 2007 Document identifier: BFG505_X_N_4