BFG520W

BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. PINNING DESCRIPTION PIN BFG520W 1 2 3 4 collector base emitter emitter BFG520W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. 1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4 Top view Fig.1 Simplified outline SOT343N. MIN. − − − − 60 − − TYP. MAX. UNIT − − − − 120 0.35 9 17 17 1.1 20 15 70 500 250 − − − − 1.6 pF GHz dB dB dB V V mA mW IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16 Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz − Rev. 04 - 21 November 2007 2 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 85 °C; note 1 VALUE 180 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 85 °C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. 20 15 2.5 70 500 +150 175 V V V mA mW °C °C UNIT handbook, halfpage 600 MBG248 P tot (mW) 400 200 0 0 50 100 150 T s ( C) o 200 Fig.2 Power derating curve. Rev. 04 - 21 November 2007 3 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC =10 µA; IE = 0 IE = 10 µA; IC = 0 VCB = 6 V; IE = 0 IC = 20 mA; VCE = 6 V; see Fig.3 IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C; see Fig.5 MIN. 20 15 2.5 − 60 − − TYP. − − − − 120 0.35 9 17 11 17 1.1 1.6 1.85 17 26 275 −50 MAX. − − − 50 250 − − − − − 1.6 2.1 − − − − − pF GHz dB dB dB dB dB dB dBm dBm mV dB UNIT V V V nA collector-emitter breakdown voltage IC = 10 µA; RBE = 0 IC = 20 mA; VCE = 6 V; f = 900 MHz; − Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − |S21|2 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; f = 900 MHz; 16 Tamb = 25 °C Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz − − − PL1 ITO Vo d2 Notes output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion IC = 20 mA; VCE = 6 V; f = 900 MHz; − RL = 50 Ω; Tamb = 25 °C note 2 note 3 note 4 − − − S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz. 3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz. 4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 21 November 2007 4 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X MLB807 handbook, halfpage 150 handbook, halfpage 0.6 MLB808 h FE C re (pF) 0.4 100 50 0.2 0 10 1 0 1 10 I C (mA) 102 0 2.5 5 7.5 VCB (V) 10 VCE = 6 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 12 MLB809 fT (GHz) 8 V CE = 6V 3V 4 0 1 10 I C (mA) 10 2 f = 1 GHz; Tamb = 25 °C. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 04 - 21 November 2007 5 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X handbook, halfpage 30 MLB810 handbook, halfpage 30 MLB811 gain (dB) 20 gain (dB) 20 MSG G max G UM MSG 10 10 G max G UM 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 I C (mA) 40 f = 900 MHz; VCE = 6 V. f = 2 GHz; VCE = 6 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MLB812 handbook, halfpage 50 MLB813 gain (dB) 40 G UM gain (dB) 40 G UM MSG MSG 30 30 20 20 G max 10 10 G max 0 10 10 2 0 10 3 f (MHz) 10 4 10 10 2 10 3 f (MHz) 10 4 IC = 5 mA; VCE = 6 V. IC = 20 mA; VCE = 6 V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 04 - 21 November 2007 6 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X handbook, halfpage 30 MLB818 handbook, halfpage 30 MLB819 d im (dB) 40 d2 (dB) 40 50 50 60 60 70 0 10 20 30 I C (mA) 40 70 0 10 20 30 I C (mA) 40 Vo = 275 mV; fp + fq − fr = 793.25 MHz; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C. Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V; RL = 75 Ω Tamb = 25 °C. Fig.10 Intermodulation distortion as a function of collector current; typical values. Fig.11 Second order intermodulation distortion as a function of collector current; typical values. handbook, halfpage 4 MLB820 handbook, halfpage 20 MLB821 F (dB) 3 f = 2000 MHz G ass (dB) 15 f = 900 MHz 1000 MHz 2000 MHz 2 1000 MHz 900 MHz 500 MHz 10 1 5 0 1 10 I C (mA) 10 2 0 1 10 I C (mA) 10 2 VCE = 6 V. VCE = 6 V. Fig.12 Minimum noise figure as a function of collector current; typical values. Fig.13 Associated available gain as a function of collector current; typical values. Rev. 04 - 21 November 2007 7 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X MLB822 handbook, halfpage 4 handbook, halfpage 20 MLB823 F (dB) 3 G ass (dB) 15 I C = 5 mA 20 mA 2 IC = 20 mA 1 5 mA 10 5 0 10 2 10 3 f (MHz) 10 4 0 10 2 10 3 f (MHz) 10 4 VCE = 6 V. VCE = 6 V. Fig.14 Minimum noise figure as a function of frequency; typical values. Fig.15 Associated available gain as a function of frequency; typical values. Rev. 04 - 21 November 2007 8 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X handbook, full pagewidth unstable region 135 o 90 o 1.0 1 0.5 2 45 o 0.8 0.6 Γ opt F min = 1.1 dB 0.4 0.2 2 5 0o 0 0.2 5 180 o stability circle 0 0.2 0.5 1 F = 1.5 dB F = 2 dB 0.2 F = 3 dB 5 0.5 135 o 1 2 45 o MLB824 1.0 f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. 90 o Fig.16 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 (2) 0.2 (3) (4) 5 180 o 0 0.2 0.5 (1) 1 2 5 0o 0 (5) (1) (2) (3) (4) (5) Γopt; Fmin = 1.85 dB. F = 2 dB. F = 2.5 dB. F = 3 dB. Γms; Gmax = 11.8 dB. 0.2 (6) (7) 5 0.5 135 o (8) 2 1 45 o MLB825 (6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. 1.0 90 o Fig.17 Common emitter noise figure circles; typical values. Rev. 04 - 21 November 2007 9 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 3 GHz 5 40 MHz 0.2 5 0.5 135 o 1 2 45 o MLB814 1.0 VCE = 6 V; IC = 20 mA; Zo = 50 Ω. 90 o Fig.18 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 10 0o 135 o 45 o 90 o VCE = 6 V; IC = 20 mA. MLB815 Fig.19 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 21 November 2007 10 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 0.25 40 MHz 0.20 0.15 0.10 0.05 0o 135 o 45 o 90 o VCE = 6 V; IC = 20 mA. MLB816 Fig.20 Common emitter reverse transmission coefficient (S12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 40 MHz 0.2 3 GHz 5 0.5 135 o 1 2 45 o MLB817 1.0 VCE = 6 V; IC = 20 mA; Zo = 50 Ω. 90 o Fig.21 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 21 November 2007 11 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X SPICE parameters for the BFG520W die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (1) (1) (1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 1.016 220.1 1.000 48.06 510 283 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.070 0.130 543.7 0.000 − − V UNIT fA SEQUENCE No. 36 38 Note (1) PARAMETER VJS MJS FC VALUE 750.0 0.000 0.780 − − UNIT mV 37 (1) mA fA − − − V mA aA − Ω µA Ω mΩ Ω − eV − pF mV − ps − V mA deg fF mV − − ps F 1. These parameters have not been extracted, the default values are shown. handbook, halfpage C cb L1 B LB B' E' LE C' L2 C C be Cce MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. 21 (1) Fig.22 Package equivalent circuit SOT343N. List of components (see Fig.22) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT Rev. 04 - 21 November 2007 12 of 15 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT343N D B E A X y HE e vMA 4 3 Q A A1 c 1 b1 e1 bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT343N REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 Rev. 04 - 21 November 2007 13 of 15 NXP Semiconductors BFG520W; BFG520W/X NPN 9 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 21 November 2007 14 of 15 NXP Semiconductors BFG520W; BFG520W/X NPN 9 GHz wideband transistors Revision history Revision history Document ID BFG520W_N_4 Modifications: BFG520W_X_3 BFG520W_2 BFG520W_1 Release date 20071121 Data sheet status Product data sheet Product specification Product specification Change notice Supersedes BFG520W_X_3 BFG520W_2 BFG520W_1 - • Page 2; text in Pinning table changed 19981002 19950824 19940829 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2007 Document identifier: BFG520W_X_N_4