BFG590

BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 — 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. PINNING DESCRIPTION PIN BFG590 1 2 3 4 collector base emitter emitter BFG590/X collector emitter base emitter handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE %MH %MN Fig.1 Simplified outline SOT143B. 1 Top view 2 MSB014 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |S21|2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 60 °C IC = 35 mA; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C CONDITIONS open emitter open base − − − − 50 − − − − MIN. − − − − 90 0.7 5 13 11 TYP. MAX. 20 15 200 400 280 − − − − pF GHz dB dB UNIT V V mA mW Rev. 04 - 12 November 2007 2 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 60 °C; note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 60 °C; see Fig.2; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. 20 15 3 200 400 +150 175 V V V mA mW °C °C UNIT handbook, halfpage 600 MBG249 Ptot (mW) 400 200 0 0 50 100 150 Ts ( o C) 200 Fig.2 Power derating curve. Rev. 04 - 12 November 2007 3 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cre GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain transition frequency feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IE = 0 IE = 0.1 mA; IC = 0 VCB = 10 V; IE = 0 IC = 70 mA; VCE = 8 V; see Fig.3 IC = 80 mA; VCE = 4 V; f = 1 GHz; see Fig.5 IC = 0; VCB = 8 V; f = 1 MHz; see Fig.4 IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C IC = 80 mA; VCE = 4 V; f = 2 GHz; Tamb = 25 °C |S21|2 Note insertion power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C MIN. 20 15 3 − 60 − − − − − TYP. − − − − 120 5 0.7 13 7.5 11 MAX. − − − 100 250 − − − − − GHz pF dB dB dB UNIT V V V nA collector-emitter breakdown voltage IC = 10 mA; IB = 0 S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 04 - 12 November 2007 4 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X handbook, halfpage 250 MRA749 handbook, halfpage 1.2 MLC057 hFE 200 C re (pF) 0.8 150 100 0.4 50 0 10−2 10−1 1 10 IC (mA) 102 0 0 2 4 6 8 10 VCB (V) VCE = 8 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 8 MLC058 fT (GHz) 6 4 2 0 10 I C (mA) 102 VCE = 4 V; f = 1 GHz. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 04 - 12 November 2007 5 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X handbook, halfpage 30 MLC059 handbook, halfpage 12 MLC060 gain (dB) 20 gain (dB) 8 G max G UM G max G UM 10 4 0 0 20 40 60 100 80 I C (mA) 0 0 20 40 60 100 80 I C (mA) f = 900 MHz; VCE = 4 V. f = 2 GHz; VCE = 4 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MLC061 gain (dB) handbook, halfpage 50 MLC062 gain (dB) 40 G UM 40 G UM MSG MSG 30 30 20 20 10 G max 10 G max 0 10 102 103 f (MHz) 104 0 10 102 103 f (MHz) 104 IC = 20 mA; VCE = 4 V. IC = 80 mA; VCE = 4 V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 04 - 12 November 2007 6 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 1.0 1 135 o 0.5 3 GHz 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 0.2 40 MHz 0.5 135 o 1 2 5 45 o MGC882 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.10 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 10 0o 135 o 45 o 90 o IC = 80 mA; VCE = 4 V. MGC805 Fig.11 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 12 November 2007 7 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 0.25 40 MHz 0.20 0.15 0.10 0.05 0o 135 o 45 o 90 o IC = 80 mA; VCE = 4 V. MGC803 Fig.12 Common emitter reverse transmission coefficient (S12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 3 GHz 1 2 5 0o 0 0.2 5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MGC804 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.13 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 12 November 2007 8 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 04 - 12 November 2007 9 of 11 NXP Semiconductors BFG590; BFG590/X NPN 5 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 12 November 2007 10 of 11 NXP Semiconductors BFG590; BFG590/X NPN 5 GHz wideband transistors Revision history Revision history Document ID BFG590_X_N_4 Modifications: BFG590_X_3 (9397 750 04346) BFG590XR_2 BFG590XR_1 Release date 20071112 Data sheet status Product data sheet Product specification Product specification Preliminary specification Change notice Supersedes BFG590_X_3 BFG590XR_2 BFG590XR_1 - • Fig. 1 and 2 on page 2; Figure note changed 19981002 19950919 19921101 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 November 2007 Document identifier: BFG590_X_N_4