BFG67

BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. MARKING TYPE NUMBER BFG67 (Fig.1) BFG67/X (Fig.1) BFG67/XR (Fig.2) CODE V3% %MV V26 Fig.1 Simplified outline SOT143B. handbook, 2 columns 4 BFG67; BFG67/X; BFG67/XR PINNING DESCRIPTION PIN BFG67 1 2 3 4 collector base emitter emitter BFG67/X collector emitter base emitter BFG67/XR collector emitter base emitter 3 handbook, 2 columns 3 4 1 Top view 2 MSB014 2 Top view 1 MSB035 Fig.2 Simplified outline SOT143R. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot Cre fT GUM F PARAMETER collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure Ts ≤ 65 °C IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 500 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz open base CONDITIONS − − − 0.5 8 17 1.3 2.2 TYP. MAX. 10 50 300 − − − − − V mA mW pF GHz dB dB dB UNIT Rev. 05 - 23 November 2007 2 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature BFG67; BFG67/X; BFG67/XR CONDITIONS open emitter open base open collector Ts ≤ 65 °C; see Fig.3; note 1 − − − − − MIN. MAX. 20 10 2.5 50 380 150 175 V V V UNIT mA mW °C °C −65 − CONDITIONS note 1 VALUE 290 UNIT K/W MBC984 - 1 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 T ( o C) s 200 Fig.3 Power derating curve. Rev. 05 - 23 November 2007 3 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS VCB = 5 V; IE = 0 IC = 15 mA; VCE = 5 V BFG67; BFG67/X; BFG67/XR MIN. − 60 − − − − − − − − − − − TYP. 100 8 0.7 1.3 0.5 17 10 1.3 1.7 2.5 3 MAX. 50 − − − − − − − − − − − UNIT nA GHz pF pF pF dB dB dB dB dB dB IC = 15 mA; VCE = 8 V; f = 500 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V Tamb = 25 °C; f = 1 GHz Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω Note S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 05 - 23 November 2007 4 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB301 MBB302 120 handbook, halfpage h FE 0.8 handbook, halfpage Cre (pF) 0.6 80 0.4 40 0.2 0 0 20 40 I C (mA) 60 0 0 4 8 12 VCB (V) 16 VCE = 5 V. IC = ic = 0; f = 1 MHz. Fig.4 DC current gain as a function of collector current. Fig.5 Feedback capacitance as a function of collector-base voltage. handbook, halfpage 10 MBB303 MBB304 handbook,25 halfpage fT (GHz) 8 gain (dB) 20 MSG G max 6 G UM 15 4 10 2 5 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 IC (mA) 40 VCE = 8 V; Tamb = 25 °; f = 2 GHz. VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Transition frequency as a function of collector current. Fig.7 Gain as a function of collector current. Rev. 05 - 23 November 2007 5 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 50 MBB305 handbook, halfpage gain (dB) 40 G UM 50 gain (dB) MBB306 40 G UM 30 30 MSG 20 G max 10 10 20 MSG G max 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 VCE = 8 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V; IC = 15 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. MBB307 handbook,50 halfpage gain (dB) handbook, halfpage 4 MBB308 F (dB) G UM 3 f = 2 GHz 40 1 GHz 30 900 MHz MSG 2 20 G max 1 10 500 MHz 0 10 10 2 10 3 f (MHz) 10 4 0 1 10 I C (mA) 100 VCE = 8 V; IC = 30 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V. Fig.10 Gain as a function of frequency. Fig.11 Minimum noise figure as a function of collector current. Rev. 05 - 23 November 2007 6 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 4 MBB309 F (dB) 3 I C = 30 mA 15 mA 5 mA 2 1 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. Fig.12 Minimum noise figure as a function of frequency. BFG67/X f (MHz) 500 8 VCE (V) 5 IC (mA) st un re gi 1 stability circle 2 ab le Noise Parameters Fmin (dB) 0.95 Gamma (opt) (mag) 0.455 (ang) 33.8 Rn/50 0.288 +j 0 −j 2 dB 0.2 3 dB 5 0.2 0.5 1 0.2 Fmin=0.95 dB OPT 2 5 10 5 10 on 0.5 ∞ 10 1.5 dB 0.5 1 ZO = 50 Ω. 2 MBB317 Fig.13 Noise circle figure. Rev. 05 - 23 November 2007 7 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67/X f (MHz) 1 000 8 VCE (V) 5 un s reg table ion BFG67; BFG67/X; BFG67/XR IC (mA) 0.5 stability circle 1 2 Noise Parameters Fmin (dB) 1.3 Gamma (opt) (mag) 0.375 (ang) 65.9 Rn/50 0.304 0.2 Fmin =1.3 dB OPT 5 10 +j 0 −j 0.2 0.5 1 2 5 10 ∞ 10 5 2 dB 0.2 3 dB 4 dB 0.5 1 ZO = 50 Ω. 2 MBB316 Fig.14 Noise circle figure. BFG67/X f (MHz) 2000 8 VCE (V) 5 IC (mA) 1 0.5 2 Noise Parameters Fmin (dB) 2.2 Gamma (opt) (mag) 0.391 (ang) 136.5 Rn/50 +j 0.2 Fmin =2.2 dB 3 dB OPT 0 –j G max =12dB 0.2 8 dB 11 dB 10 dB 9 dB 5 0.2 0.5 1 2 5 4 dB 5 dB 5 10 10 0.184 ∞ 10 Average Gain Parameters GMAX (dB) 12 Gamma (max) (mag) 0.839 (ang) −170 0.5 1 ZO = 50 Ω. 2 MBB315 Fig.15 Noise circle figure. Rev. 05 - 23 November 2007 8 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 3 GHz 0.2 5 10 0 −j 40 MHz 0.2 5 10 0.2 0.5 1 2 5 10 +j ∞ 0.5 1 VCE = 8 V; IC = 15 mA; ZO = 50 Ω. 2 MBB314 Fig.16 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90° 120° 60° 150° 30° 40 MHz +ϕ 180° 50 40 30 20 10 3 GHz 0° −ϕ 150° 30° 120° VCE = 8 V; IC = mA; ZO = 50 Ω. 90° 60° MBB313 Fig.17 Common emitter forward transmission coefficient (S21). Rev. 05 - 23 November 2007 9 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 −j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz ∞ 10 0.5 1 VCE = 8 V; IC = 15 mA. 2 MBB312 Fig.18 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90° 120° 60° 150° 3 GHz 30° 180° 0.5 0.4 0.3 0.2 0.1 40 MHz +ϕ 0° −ϕ 150° 30° 120° 90° VCE = 8 V; IC = 15 mA. 60° MBB311 Fig.19 Common emitter output reflection coefficient (S22). Rev. 05 - 23 November 2007 10 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors PACKAGE OUTLINES Plastic surface mounted package; 4 leads BFG67; BFG67/X; BFG67/XR SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 05 - 23 November 2007 11 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Plastic surface mounted package; reverse pinning; 4 leads SOT143R D B E A X y vMA HE e bp wM B 3 4 Q A A1 c 2 b1 e1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-10 Rev. 05 - 23 November 2007 12 of 14 NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 05 - 23 November 2007 13 of 14 NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Revision history Table 1. Revision history Release date 20071123 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG67_X_XR_4 BFG67_SERIES_3 BFG67_SERIES_2 BFG67_SERIES_1 Document ID BFG67_X_XR_N_5 Modifications: BFG67_X_XR_4 (9397 750 04349) BFG67_SERIES_3 BFG67_SERIES_2 BFG67_SERIES_1 • Page 2; Table Marking code; row 1 and 2 code changed 19981002 19950901 - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2007 Document identifier: BFG67_X_XR_N_5