BFQ19

BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Cre F PARAMETER collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance noise figure up to Ts = 145 °C (note 1) Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C open base CONDITIONS − − − 5.5 1.3 3.3 TYP. PINNING PIN 1 2 3 DESCRIPTION Code: FB emitter collector base BFQ19 3 2 1 Fig.1 SOT89. MAX. 15 100 1 − − − UNIT V mA W GHz pF dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 145 °C (note 1) open base open collector CONDITIONS open emitter − − − − − − −65 − MIN. MAX. 20 15 3.3 100 150 1 150 175 UNIT V V V mA mA W °C °C Rev. 03 - 28 September 2007 2 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 70 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C IC = 70 mA; VCE = 10 V; f = 500 MHz IC = 50 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 50 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C F Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2  2   1 – S 11   1 – S 22  2 BFQ19 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 145 °C (note 1) THERMAL RESISTANCE 30 K/W MIN. − 25 − − − 4.4 − − − TYP. − 80 1.6 5 1.3 5.5 11.5 7.5 3.3 MAX. 100 − − − − − − − − UNIT nA pF pF pF GHz dB dB dB noise figure IC = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C Rev. 03 - 28 September 2007 3 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 MBB774 MBB830 handbook, halfpage 120 handbook, halfpage 5 h FE Cc (pF) 4 80 3 2 40 1 0 0 40 80 I C (mA) 120 0 0 5 10 15 V CB (V) 20 VCE = 10 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.2 DC current gain as a function of collector current. Fig.3 Collector capacitance as a function of collector-base voltage. handbook, halfpage 8 MBB773 fT (GHz) 6 4 2 0 0 40 80 I C (mA) 120 VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.4 Transition frequency as a function of collector current. Rev. 03 - 28 September 2007 4 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE BFQ19 Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 bp2 wM B bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Rev. 03 - 28 September 2007 5 of 7 NXP Semiconductors BFQ19 NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 03 - 28 September 2007 6 of 7 NXP Semiconductors BFQ19 NPN 5 GHz wideband transistor Revision history Revision history Document ID BFQ19_N_3 Modifications: BFQ19_CNV_2 Release date 20070928 Data sheet status Product data sheet Product specification Change notice Supersedes BFQ19_CNV_2 - • Fig. 1 and package outline updated 19950901 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 September 2007 Document identifier: BFQ19_N_3