BFR93AR

BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features I Very high power gain I Low noise figure I Very low intermodulation distortion 1.3 Applications I RF wideband amplifiers and oscillators 1.4 Quick reference data Table 1. VCBO VCEO IC Ptot Cre fT GUM Quick reference data Conditions open emitter Min Tsp ≤ 95 °C IC = 0 mA; VCE = 5 V; f = 1 MHz; IC = 30 mA; VCE = 5 V; f = 500 MHz; IC = 30 mA; VCE = 8 V; Tamb = 25 °C f = 1 GHz f = 2 GHz NF VO noise figure output voltage IC = 5 mA; VCE = 8 V; f = 1 GHz; ΓS = Γopt; Tamb = 25 °C IMD = −60 dB; IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; fp + fq − fr = 793.25 MHz 13 7 1.9 425 dB dB dB mV Typ 0.6 6 Max 15 12 35 300 Unit V V mA mW pF GHz collector-base voltage collector current total power dissipation feedback capacitance transition frequency unilateral power gain Symbol Parameter collector-emitter voltage open base NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter base collector 1 2 3 3 2 1 sym026 Simplified outline Symbol 3. Ordering information Table 3. Ordering information Package Name BFR93AR Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. BFR93AR Marking Marking code *R5 Description * = p : made in Hong Kong * = w : made in China Type number 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Conditions open emitter open base open collector Tsp ≤ 95 °C; see Figure 2 [1] Min −65 - Max 15 12 2 35 300 +150 +175 Unit V V V mA mW °C °C Tsp is the temperature at the solder point of the collector pin. BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 2 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 6. Thermal characteristics Table 6. Symbol Rth(j-sp) [1] Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Tsp ≤ 95 °C [1] Typ 260 Unit K/W Tsp is the temperature at the solder point of the collector pin. 7. Characteristics Table 7. Symbol ICBO hFE Cc Ce Cre fT GUM Characteristics Parameter collector-base cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency unilateral power gain Conditions IE = 0 A; VCB = 5 V IC = 30 mA; VCE = 5 V; see Figure 3 IE = ie = 0 A; VCB = 5 V; f = 1 MHz; see Figure 4 IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz IC = ic = 0 A; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 30 mA; VCE = 5 V; f = 500 MHz; see Figure 5 IC = 30 mA; VCE = 8 V; Tamb = 25 °C; see Figure 6 to Figure 9 f = 1 GHz f = 2 GHz NF noise figure IC = 5 mA; VCE = 8 V; ΓS = Γopt; Tamb = 25 °C; see Figure 12 and Figure 13 f = 1 GHz f = 2 GHz VO IMD2 output voltage second-order intermodulation distortion see Figure 15 [2][3] [2][4] [1] Min 40 4.5 Typ 90 0.7 1.9 0.6 6 Max 50 - Unit nA pF pF pF GHz - 13 7 - dB dB - 1.9 3 425 −50 - dB dB mV dB [1] GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 – S 11 ) ( 1 – S 22 ) [2] [3] Measured on the same crystal in a SOT37 package (BFR91A). IMD = −60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at IMD = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB at fq = 803.25 MHz; Vr = VO −6 dB at fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz [4] IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; Vp = 200 mV at fp = 250 MHz; Vq = 200 mV at fp = 560 MHz; measured at fp + fq = 810 MHz © NXP B.V. 2006. All rights reserved. 2 BFR93AR_1 Product data sheet Rev. 01 — 30 November 2006 3 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 1.5 nF +VBB 1.5 nF L3 10 kΩ L2 1 nF 1 nF L1 1 nF 270 Ω +VCC 75 Ω output 75 Ω input DUT 3.3 pF 18 Ω 0.68 pF mbb251 L1 = L3 = 5 µH choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig 1. Intermodulation distortion and second harmonic MATV test circuit 400 Ptot (mW) 300 mra702 120 mcd087 hFE 80 200 40 100 0 0 0 50 100 150 Tsp (°C) 200 0 10 20 IC (mA) 30 VCE = 5 V; Tj = 25 °C. Fig 2. Power derating curve Fig 3. DC current gain as a function of collector current BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 4 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 1 Cc (pF) 0.8 mbb252 8 fT (GHz) 6 mcd089 0.6 4 0.4 2 0.2 0 0 4 8 12 16 VCB (V) 0 0 10 20 30 IC 40 (mA) IE = ie = 0 mA; f = 1 MHz; Tj = 25 °C. VCE = 2 V; f = 500 MHz; Tj = 25 °C. Fig 4. Collector capacitance as a function of collector-base voltage; typical values 30 gain (dB) MSG 20 GUM mbb255 Fig 5. Transition frequency as a function of collector current; typical values mbb256 30 gain (dB) 20 MSG GUM 10 10 0 0 10 20 30 IC (mA) 40 0 0 10 20 30 IC (mA) 40 VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig 6. Gain as a function of collector current; typical values Fig 7. Gain as a function of collector current; typical values BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 5 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 50 gain (dB) 40 GUM mbb257 50 gain (dB) 40 GUM mbb258 30 MSG 20 30 MSG 20 Gmax 10 Gmax 10 0 10 102 103 4 f (MHz) 10 0 10 102 103 f (MHz) 104 IC = 10 mA; VCE = 8 V. IC = 30 mA; VCE = 8 V. Fig 8. Gain as a function of frequency; typical values 40 BS (mS) 20 mbb253 Fig 9. Gain as a function of frequency; typical values 30 mbb254 BS (mS) 20 3.5 10 1.6 2.0 2.5 3.0 NF = 3.5 dB 0 2.3 2.5 3.0 NF = 4.0 dB 0 −10 −20 −20 −40 −30 0 20 40 60 GS 80 (mS) 0 20 40 GS (mS) 60 IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C. IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C. Fig 10. Circles of constant noise figure; typical values Fig 11. Circles of constant noise figure; typical values BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 6 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 4 NF (dB) 3 mcd094 4 NF (dB) 3 mcd095 f = 2 GHz 1 GHz 2 500 MHz 2 IC = 30 mA 1 1 10 mA 5 mA 0 1 10 IC (mA) 102 0 102 103 f (MHz) 104 VCE = 8 V. VCE = 8 V. Fig 12. Minimum noise figure as a function of collector current; typical values −40 IMD (dB) −45 mbb263 Fig 13. Minimum noise figure as a function of frequency; typical values −30 IMD2 (dB) −35 mbb264 −50 −40 −55 −45 −60 −50 −65 0 10 20 30 IC (mA) 40 −55 0 10 20 30 IC (mA) 40 VCE = 8 V; VO = 425 mV (52.6 dBmV); fp + fq − fr = 793.25 MHz; Tamb = 25 °C. Measured in MATV test circuit; see Figure 1. VCE = 8 V; VO = 200 mV (46 dBmV); fp + fq − fr = 810 MHz; Tamb = 25 °C. Measured in MATV test circuit; see Figure 1. Fig 14. Intermodulation distortion; typical values Fig 15. Second order intermodulation distortion; typical values BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 7 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 1 0.5 2 0.2 0.5 +j 0 −j 1200 0.2 800 1000 500 200 0.2 1 2 5 10 5 10 ∞ 10 5 100 MHz 0.5 1 2 mbb259 IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C. Fig 16. Common emitter input reflection coefficient (S11) 90° 120° 60° 100 150° 200 30° 500 1000 180° 1200 MHz 800 10 20 30 0° −ϕ +ϕ 150° 30° 120° 90° 60° mbb261 IC = 30 mA; VCE = 8 V; Tamb = 25 °C. Fig 17. Common emitter forward transmission coefficient (S21) BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 8 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 90° 120° 1200 1000 150° 800 500 200 0.05 0.1 0.15 0° −ϕ 30° 60° 100 MHz 180° +ϕ 150° 30° 120° 90° 60° mbb262 IC = 30 mA; VCE = 8 V; Tamb = 25 °C. Fig 18. Common emitter reverse transmission coefficient (S12) 1 0.5 2 0.2 5 10 +j 0 −j 0.2 0.5 1 2 1000 800 500 200 1200 0.2 100 MHz 5 5 10 ∞ 10 0.5 1 2 mbb260 IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C. Fig 19. Common emitter output reflection coefficient (S22) BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 9 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 20. Package outline SOT23 BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 10 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 9. Abbreviations Table 8. Acronym NPN PNP RF MATV Abbreviations Description Negative Positive Negative Positive Negative Positive Radio Frequency Master Antenna Television 10. Revision history Table 9. Revision history Release date 20061130 Data sheet status Product data sheet Change notice Supersedes Document ID BFR93AR_1 BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 11 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 12 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 November 2006 Document identifier: BFR93AR_1