BFU550R

SO T1 43 B BFU550 NPN wideband silicon RF transistor Rev. 2.1 — 17 April 2019 1 Product data sheet Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits • • • • • Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.7 dB at 900 MHz Maximum stable gain 21 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications • • • • Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB collector-base voltage open emitter - - 24 V VCE collector-emitter voltage open base - - 12 V shorted base - - 24 V open collector - - 2 V - 15 50 mA - - 450 mW VEB emitter-base voltage IC collector current [1] Ptot total power dissipation Tsp ≤ 87 °C hFE DC current gain IC = 15 mA; VCE = 8 V 60 95 200 Cc collector capacitance VCB = 8 V; f = 1 MHz - 0.72 - pF fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz BFU550 NXP Semiconductors NPN wideband silicon RF transistor Symbol Parameter Conditions [2] Min Typ Max Unit - 21 - dB Gp(max) maximum power gain IC = 15 mA; VCE = 8 V; f = 900 MHz NFmin minimum noise figure IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt - 0.7 - dB PL(1dB) output power at 1 dB gain compression IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900 MHz - 13.5 - dBm [1] [2] Tsp is the temperature at the solder point of the collector lead. If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG. 2 Pinning information Table 2. Discrete pinning 3 Pin Description 1 collector 2 base 3 emitter 4 emitter Simplified outline 4 Graphic symbol 1 3 2 1 3, 4 2 aaa-010459 Ordering information Table 3. Ordering information Type number BFU550 OM7962 [1] Package Name Description - plastic surface-mounted package; 4 leads - Version Customer evaluation kit for BFU520, BFU530 and BFU550 SOT143B [1] - The customer evaluation kit contains the following: • Unpopulated RF amplifier Printed-Circuit Board (PCB) – Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration – Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) – BFU520, BFU530 and BFU550 samples – USB stick with data sheets, application notes, models, S-parameter and noise files 4 Marking Table 4. Marking Type number Marking Description BFU550 *TC * = t : made in Malaysia * = w : made in China BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 2 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 5 Design support Table 5. Available design support Download from the BFU550 product information page on http://www.nxp.com. 6 Support item Available Remarks Device models for Agilent EEsof EDA ADS yes Based on Mextram device model. SPICE model yes Based on Gummel-Poon device model. S-parameters yes Noise parameters yes Customer evaluation kit yes Solder pattern yes Application notes yes See Section 3 and Section 10. See Section 10.1 and Section 10.2. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCB collector-base voltage open emitter - 30 V VCE collector-emitter voltage open base - 16 V shorted base - 30 V open collector - 3 V VEB emitter-base voltage IC collector current - 80 mA Tstg storage temperature -65 +150 °C VESD electrostatic discharge voltage Human Body Model (HBM) According to JEDEC standard 22-A114E - ±150 V Charged Device Model (CDM) According to JEDEC standard 22-C101B - ±2 kV 7 Recommended operating conditions Table 7. Characteristics BFU550 Product data sheet Symbol Parameter Conditions Min Typ Max Unit VCB collector-base voltage open emitter - - 24 V VCE collector-emitter voltage open base - - 12 V shorted base - - 24 V open collector - - 2 V - - 50 mA - - 10 dBm -40 - +150 °C VEB emitter-base voltage IC collector current Pi input power Tj junction temperature ZS = 50 Ω All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 3 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor Symbol Ptot [1] 8 Parameter Conditions total power dissipation [1] Tsp ≤ 87 °C Min Typ Max Unit - - 450 mW Tsp is the temperature at the solder point of the collector lead. Thermal characteristics Table 8. Thermal characteristics Symbol Rth(j-sp) [1] Parameter Conditions [1] thermal resistance from junction to solder point Typ Unit 140 K/W Tsp is the temperature at the solder point of the collector lead. Tsp has the following relation to the ambient temperature Tamb: Tsp = Tamb + P × Rth(sp-a) With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and ambient. Rth(sp-a) is determined by the heat transfer properties in the application. The heat transfer properties are set by the application board materials, the board layout and the environment e.g. housing. aaa-010493 600 Ptot (mW) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Tsp (°C) 160 Figure 1. Power derating curve 9 Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 100 nA; IE = 0 mA 24 - - V V(BR)CEO collector-emitter breakdown voltage IC = 150 nA; IB = 0 mA 12 - - V - 15 50 mA - 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG. BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 6 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 9.1 Graphs IC (mA) aaa-011532 32 (7) (6) 24 (5) (4) 16 (3) 8 (2) (1) 0 0 1 2 3 4 5 6 7 VCE (V) 8 Tamb = 25 °C. 1. IB = 25 μA 2. IB = 75 μA 3. IB = 125 μA 4. IB = 175 μA 5. IB = 225 μA 6. IB = 275 μA 7. IB = 325 μA Figure 2. Collector current as a function of collector-emitter voltage; typical values aaa-011541 150 hFE aaa-011542 150 hFE 125 125 (3) 100 100 (2) 75 (1) (2) (1) 75 50 50 25 25 0 0 0 5 10 15 20 25 IC (mA) 30 0 5 10 15 20 25 IC (mA) 30 Tamb = 25 °C. 1. VCE = 3.0 V 2. VCE = 8.0 V VCE = 8 V. 1. Tamb = -40 °C 2. Tamb = +25 °C 3. Tamb = +125 °C Figure 3. DC current gain as function of collector current; typical values Figure 4. DC current gain as function of collector current; typical values BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 7 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor aaa-011543 IC (mA) IB (mA) 10 aaa-011544 10 10-1 10-1 10-3 10-3 (2) (1) 10-5 0.5 0.6 0.7 (1) (2) 10-5 0.8 0.9 VBE (V) 1.0 Tamb = 25 °C. 1. VCE = 3.0 V 2. VCE = 8.0 V 10-7 0.5 0.6 0.7 0.8 0.9 VBE (V) 1.0 Tamb = 25 °C. 1. VCE = 3.0 V 2. VCE = 8.0 V Figure 5. Collector current as a function of base-emitter Figure 6. Base current as a function of base-emitter voltage; typical values voltage; typical values aaa-011545 10-4 IBR (A) aaa-011546 845 CC (fF) 10-5 815 10-6 (1) (2) (3) 785 10-7 755 10-8 1 1.4 1.8 2.2 2.6 VEB (V) 3 725 VCE = 3 V. 1. Tamb = -40 °C 2. Tamb = +25 °C 3. Tamb = +125 °C IC = 0 mA; f = 1 MHz; Tamb = 25 °C. Figure 7. Reverse base current as a function of emitterbase voltage; typical values Figure 8. Collector capacitance as a function of collector-base voltage; typical values BFU550 Product data sheet 695 0 2 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 4 6 8 10 VCB (V) 12 © NXP B.V. 2019. All rights reserved. 8 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor aaa-011547 12 fT (GHz) 10 (4) (3) (2) 8 (1) 6 4 2 0 0 5 10 15 20 25 30 35 IC (mA) 40 Tamb = 25 °C. 1. VCE = 3.3 V 2. VCE = 5.0 V 3. VCE = 8.0 V 4. VCE = 12.0 V Figure 9. Transition frequency as a function of collector current; typical values G (dB) aaa-011548 40 G (dB) 30 aaa-011549 40 30 MSG MSG 20 20 Gp(max) |s21|2 10 0 0 500 1000 1500 Gp(max) MSG 2000 2500 f (MHz) 3000 0 MSG |s21|2 10 0 500 1000 1500 2000 2500 f (MHz) 3000 IC = 15 mA; VCE = 8 V; Tamb = 25 °C. IC = 25 mA; VCE = 8 V; Tamb = 25 °C. Figure 10. Gain as a function of frequency; typical values Figure 11. Gain as a function of frequency; typical values BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 9 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor aaa-011550 30 |s21|2 (dB) 25 (1) 20 (3) aaa-011551 (1) 30 Gp(max) (dB) 25 (2) (3) (4) 20 (2) 15 (5) (4) 15 10 (5) 10 5 5 0 0 0 5 10 15 20 25 30 35 IC (mA) 40 VCE = 8 V; Tamb = 25 °C. 1. f = 300 MHz 2. f = 433 MHz 3. f = 800 MHz 4. f = 900 MHz 5. f = 1800 MHz VCE = 8 V; Tamb = 25 °C. If K >1 then Gp(max) = maximum power gain. If K < 1 then Gp(max) = MSG. 1. f = 300 MHz 2. f = 433 MHz 3. f = 800 MHz 4. f = 900 MHz 5. f = 1800 MHz Figure 12. Insertion power gain as a function of collector current; typical values Figure 13. Maximum power gain as a function of collector current; typical values 0 5 10 15 20 25 30 35 IC (mA) 40 aaa-011552 30 |s21|2 (dB) 25 aaa-011553 30 Gp(max) (dB) 25 (1) (2) (3) (1) 20 (4) 20 (2) (3) (5) 15 (4) 15 10 (5) 10 5 5 0 0 0 2 4 6 8 10 12 VCE (V) 14 IC = 25 mA; Tamb = 25 °C. 1. f = 300 MHz 2. f = 433 MHz 3. f = 800 MHz 4. f = 900 MHz 5. f = 1800 MHz IC = 25 mA; Tamb = 25 °C. If K >1 then Gp(max) = maximum power gain. If K < 1 then Gp(max) = MSG. 1. f = 300 MHz 2. f = 433 MHz 3. f = 800 MHz 4. f = 900 MHz 5. f = 1800 MHz Figure 14. Insertion power gain as a function of collector-emitter voltage; typical values Figure 15. Maximum power gain as a function of collector-emitter voltage; typical values 0 2 BFU550 Product data sheet 4 6 8 10 12 VCE (V) 14 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 10 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 1 0.5 2 0.2 5 10 0.0 0.2 0.5 1 2 5 10 ∞ -10 -0.2 -5 (2) (1) -2 -0.5 -1 aaa-011554 VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz. 1. IC = 15 mA 2. IC = 25 mA Figure 16. Input reflection coefficient (s11); typical values 1 0.5 2 0.2 5 10 0.0 0.2 0.5 1 2 5 10 ∞ -10 -0.2 -5 (2) (1) -2 -0.5 -1 aaa-011555 VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz. 1. IC = 15 mA 2. IC = 25 mA Figure 17. Output reflection coefficient (s22); typical values BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 11 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor aaa-011556 25 IP3o (dBm) 21 12 17 8 13 4 (3) (2) 9 aaa-011557 16 PL(1dB) (dBm) (3) (2) 0 (1) (1) 5 0 5 10 15 20 25 30 35 IC (mA) 40 -4 0 5 10 15 20 25 30 35 IC (mA) 40 VCE = 8 V; Tamb = 25 °C. 1. f1 = 433 MHz; f2 = 434 MHz 2. f1 = 900 MHz; f2 = 901 MHz 3. f1 = 1800 MHz; f2 = 1801 MHz VCE = 8 V; Tamb = 25 °C. 1. f = 433 MHz 2. f = 900 MHz 3. f = 1800 MHz Figure 18. Output third-order intercept point as a function of collector current; typical values Figure 19. Output power at 1 dB gain compression as a function of collector current; typical values aaa-011558 26 IP3o (dBm) 24 aaa-011559 14 PL(1dB) (dBm) 12 (1) (2) 22 10 (1) (2) 20 (3) 8 18 16 (3) 0 2 4 6 8 10 12 VCE (V) 14 6 0 2 4 6 8 10 12 VCE (V) 14 IC = 25 mA; Tamb = 25 °C. 1. f1 = 433 MHz; f2 = 434 MHz 2. f1 = 900 MHz; f2 = 901 MHz 3. f1 = 1800 MHz; f2 = 1801 MHz IC = 25 mA; Tamb = 25 °C. 1. f = 433 MHz 2. f = 900 MHz 3. f = 1800 MHz Figure 20. Output third-order intercept point as a function of collector-emitter voltage; typical values Figure 21. Output power at 1 dB gain compression as a function of collector-emitter voltage; typical values BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 12 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor aaa-011561 1.6 NFmin (dB) (8) 1.2 (7) aaa-011560 1.6 NFmin (dB) (6) 0.8 (4) (5) (3) (2) 1.2 (1) (3) 0.8 0.4 (2) 0 (1) 0.4 0 500 1000 1500 2000 f (MHz) 2500 VCE = 8 V; Tamb = 25 °C; ΓS = Γopt. 1. f = 433 MHz 2. f = 900 MHz 3. f = 1800 MHz VCE = 8 V; Tamb = 25 °C; ΓS = Γopt. 1. IC = 1 mA 2. IC = 2 mA 3. IC = 3 mA 4. IC = 5 mA 5. IC = 10 mA 6. IC = 15 mA 7. IC = 25 mA 8. IC = 35 mA Figure 22. Minimum noise figure as a function of collector current; typical values Figure 23. Minimum noise figure as a function of frequency; typical values 0 10-1 BFU550 Product data sheet 1 10 IC (mA) 102 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 13 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 1 0.5 0.2 0.0 2 (1) 0.2 5 (2) (3) (4) 0.5 (8) 10 (6) (5) 1 2 5 10 ∞ -10 (7) -5 -0.2 -2 -0.5 -1 aaa-011562 VCE = 8 V; 400 MHz ≤ f ≤ 2 GHz. 1. IC = 1 mA 2. IC = 2 mA 3. IC = 3 mA 4. IC = 5 mA 5. IC = 10 mA 6. IC = 15 mA 7. IC = 25 mA 8. IC = 35 mA Figure 24. Optimum reflection coefficient (Γopt); typical values BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 14 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 10 Application information More information about the following application example can be found in the application notes. See Section 5 "Design support". The following application example can be implemented using the evaluation kit. See Section 3 "Ordering information" for the order type number. The following application example can be simulated using the simulation package. See Section 5 "Design support". 10.1 Application example: 433 ISM band LNA 433 ISM band LNA, optimized for low noise. More detailed information of the application example can be found in the application note: AN11431. VCC 3.6 V 1 µF 220 pF 22 Ω 10 nF 220 pF 12 nH Murata LQW series 10 kΩ 5.6 Ω 56 pF RF output (SMA) 15 pF RF input (SMA) DUT 15 nH Murata LQW series 4.7 pF aaa-010449 Figure 25. Schematic 433 MHz ISM band LNA Remark: fine tuning of components maybe required depending on PCB parasitics. Table 10. Application performance data at 433 MHz ICC = 20 mA; VCC = 3.6 V Symbol 2 BFU550 Product data sheet Parameter Conditions Min Typ Max Unit |s21| insertion power gain - 21 - dB NF noise figure - 1.3 - dB IP3o output third-order intercept point - 19 - dBm f1 = 433.1 MHz; f2 = 433.2 MHz; Pi = -30 dBm per carrier All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 15 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 10.2 Application example: 866 ISM band LNA 866 ISM band LNA, optimized for low noise. More detailed information of the application example can be found in the application note: AN11432. VCC 3.6 V 5.6 nF 220 pF 22 Ω 3.9 nF 220 pF 10 kΩ 10 Ω 8.2 nH Murata LQW series 8.2 pF 47 pF RF input (SMA) RF output (SMA) 82 pF DUT 10 nH Murata LQW series 1.5 pF aaa-010454 Figure 26. Schematic 866 MHz ISM band LNA Remark: fine tuning of components maybe required depending on PCB parasitics. Table 11. Application performance data at 866 MHz ICC = 20 mA; VCC = 3.6 V Symbol 2 BFU550 Product data sheet Parameter Conditions Min Typ Max Unit |s21| insertion power gain - 15 - dB NF noise figure - 1.4 - dB IP3o output third-order intercept point - 19 - dBm f1 = 866.1 MHz; f2 = 866.2 MHz; Pi = -30 dBm per carrier All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 16 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 11 Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 1 c 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-16 06-03-16 SOT143B Figure 27. Package outline SOT143B BFU550 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 17 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 12 Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 13 Abbreviations Table 12. Abbreviations Acronym Description AEC automotive electronics council ISM industrial, scientific, and medical LNA low-noise amplifier MSG maximum stable gain NPN negative-positive-negative SMA SubMiniature version A 14 Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU550 v.2.1 20190417 Product data sheet - BFU550 v.2 modification • Extended the description on the changes in Schematic 866 MHz ISM band LNA: Biasing on the schematic is adapted according to the EVB to do the RF/DC. Connection of 10 K resistor moved to the other side of the 82 pF capacitor BFU550 v.2 20190408 modification • Adapted Schematic 866 MHz ISM band LNA. BFU550 v.1 20140305 BFU550 Product data sheet Product data sheet Product data sheet - BFU550 v.1 - - All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 18 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor 15 Legal information 15.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 15.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without BFU550 Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 19 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 15.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BFU550 Product data sheet Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 17 April 2019 © NXP B.V. 2019. All rights reserved. 20 / 21 BFU550 NXP Semiconductors NPN wideband silicon RF transistor Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 10.1 10.2 11 12 13 14 15 Product profile .................................................... 1 General description ............................................1 Features and benefits ........................................1 Applications ........................................................1 Quick reference data ......................................... 1 Pinning information ............................................ 2 Ordering information .......................................... 2 Marking .................................................................2 Design support ....................................................3 Limiting values .................................................... 3 Recommended operating conditions ................ 3 Thermal characteristics ......................................4 Characteristics .................................................... 4 Graphs ............................................................... 7 Application information .................................... 15 Application example: 433 ISM band LNA ........ 15 Application example: 866 ISM band LNA ........ 16 Package outline .................................................17 Handling information ........................................ 18 Abbreviations .................................................... 18 Revision history ................................................ 18 Legal information .............................................. 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 April 2019 Document identifier: BFU550