BFU725F

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features I I I I Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications I I I I I I 2nd LNA stage and mixer stage in DBS LNB’s Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE Quick reference data Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 10 mA; VCE = 2 V; Tj = 25 °C [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain Min 160 Typ 25 280 Max 10 2.8 0.55 40 136 400 Unit V V V mA mW NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor Quick reference data …continued Conditions VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C IC = 25 mA; VCE = 2 V; f = 5.8 GHz; Tamb = 25 °C IC = 5 mA; VCE = 2 V; f = 5.8 GHz; ΓS = Γopt; Tamb = 25 °C [2] Table 1. CCBS fT Gp(max) NF Symbol Parameter collector-base capacitance transition frequency maximum power gain noise figure Min - Typ 70 55 18 0.7 Max - Unit fF GHz dB dB [1] [2] Tsp is the temperature at the solder point of the emitter lead. Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Pin 1 2 3 4 Discrete pinning Description emitter base emitter collector 1, 3 2 1 mbb159 Simplified outline 3 4 Graphic symbol 4 2 3. Ordering information Table 3. Ordering information Package Name BFU725F/N1 Description plastic surface-mounted flat pack package; reverse pinning; 4 leads Version SOT343F Type number 4. Marking Table 4. Marking Marking B7* Description * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China Type number BFU725F/N1 BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 2 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Conditions open emitter open base open collector Tsp ≤ 90 °C [1] Min −65 - Max 10 2.8 0.55 40 136 +150 150 Unit V V V mA mW °C °C Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 440 Unit K/W 200 Ptot (mW) 150 001aah424 100 50 0 0 40 80 120 Tsp (°C) 160 Fig 1. Power derating curve BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 3 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC ICBO hFE CCES CEBS CCBS fT Gp(max) collector current collector-base cut-off current DC current gain collector-emitter capacitance emitter-base capacitance collector-base capacitance transition frequency maximum power gain IE = 0 mA; VCB = 4.5 V IC = 10 mA; VCE = 2 V VCB = 2 V; f = 1 MHz VEB = 0.5 V; f = 1 MHz VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C IC = 25 mA; VCE = 2 V; Tamb = 25 °C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz |s21|2 insertion power gain IC = 25 mA; VCE = 2 V; Tamb = 25 °C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz NF noise figure IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz Gass associated gain IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz 24 22 20 10 dB dB dB dB dB 0.42 0.43 0.47 0.7 1.1 dB dB dB dB dB 26.7 25.4 23 16 9.3 dB dB dB dB dB [1] Conditions IC = 2.5 µA; IE = 0 mA IC = 1 mA; IB = 0 mA Min Typ Max Unit 10 2.8 25 40 100 V V mA nA fF fF fF GHz dB dB dB dB dB 160 280 400 268 400 70 55 28 27 18 13 - 25.5 - 13.5 - BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 4 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter PL(1dB) output power at 1 dB gain compression Conditions IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz IP3 third-order intercept point IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C; f2 = f1 + 1 MHz f1 = 1.5 GHz f1 = 1.8 GHz f1 = 2.4 GHz f1 = 5.8 GHz [1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. Min Typ Max Unit 8.5 9 8.5 8 dBm dBm dBm dBm - 17 17 17 19 - dBm dBm dBm dBm 30 IC (mA) 20 001aak271 400 hFE 350 001aak272 (1) (2) (3) (4) (5) (6) (7) (8) 300 10 (9) (10) (11) 250 (1) (2) (3) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 200 0 10 20 IC (mA) 30 Tamb = 25 °C. (1) IB = 110 µA (2) IB = 100 µA (3) IB = 90 µA (4) IB = 80 µA (5) IB = 70 µA (6) IB = 60 µA (7) IB = 50 µA (8) IB = 40 µA (9) IB = 30 µA (10) IB = 20 µA (11) IB = 10 µA Tamb = 25 °C. (1) VCE = 1 V (2) VCE = 1.5 V (3) VCE = 2 V Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain a function of collector current; typical values BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 5 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 160 CCBS (fF) 120 001aah427 60 fT (GHz) 40 001aak273 80 20 40 0 0 4 8 VCB (V) 12 0 0 10 20 30 IC (mA) 40 f = 1 MHz, Tamb = 25 °C. VCE = 2 V; f = 2 GHz; Tamb = 25 °C. Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values 102 Fig 5. Transition frequency as a function of collector current; typical values 001aah429 G (dB) (1) (2) (3) MSG Gmax (4) (5) MSG 10 Gmax 1 10−1 1 10 IC (mA) 102 VCE = 2 V; Tamb = 25 °C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 6 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 50 G (dB) 40 MSG 001aah430 50 G (dB) 40 IS21I2 MSG 001aah431 30 IS21I2 20 Gp(max) 10 MSG 30 20 Gp(max) MSG 10 0 10−2 10−1 1 10 f (GHz) 102 0 10−2 10−1 1 10 f (GHz) 102 VCE = 2 V; IC = 5 mA; Tamb = 25 °C. VCE = 2 V; IC = 25 mA; Tamb = 25 °C. Fig 7. 2.0 NFmin (dB) 1.6 Gain as a function of frequency; typical values 001aah432 Fig 8. 2.0 NFmin (dB) 1.6 Gain as a function of frequency; typical values 001aah433 (1) (1) (2) 1.2 (2) 1.2 0.8 (3) (4) (5) 0.8 0.4 0.4 0 0 10 20 IC (mA) 30 0 0 4 8 12 f (GHz) 16 VCE = 2 V; Tamb = 25 °C. (1) f = 12 GHz (2) f = 5.8 GHz (3) f = 2.4 GHz (4) f = 1.8 GHz (5) f = 1.5 GHz VCE = 2 V; Tamb = 25 °C. (1) IC = 25 mA (2) IC = 5 mA Fig 9. Minimum noise figure as a function of collector current; typical values Fig 10. Minimum noise figure as a function of frequency; typical values BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 7 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F D A E y HE X e 3 4 A c Lp w M 2 1 w M A bp e1 b1 A detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.75 0.65 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.48 0.38 w 0.2 y 0.1 OUTLINE VERSION SOT343F REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 Fig 11. Package outline SOT343F BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 8 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Acronym CDMA DBS DC DRO LNA LNB Ka NPN RF WLAN Abbreviations Description Code Division Multiple Access Direct Broadcast Satellite Direct Current Dielectric Resonator Oscillator Low Noise Amplifier Low Noise Block Kurtz above Negative-Positive-Negative Radio Frequency Wireless Local Area Network 10. Revision history Table 9. Revision history Release date 20090713 Data sheet status Product data sheet Change notice Supersedes Document ID BFU725F_N1_1 BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 9 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU725F_N1_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 July 2009 10 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 July 2009 Document identifier: BFU725F_N1_1