BGA7124

D D D D A R FT D A R FT A R FT A R A R FT FT BGA7124 Rev. 00.07 — 16 July 2009 R D FT A D R D FT A R D R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D FT A Objective data sheet R D FT A FT A R D FT A R D FT A A R FT FT A R D R D F A A R FT D FT A R D 1. Product profile 1.1 General description D D R A The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz. R D FT A 1.2 Features 1.3 Applications C Symbol ICq f Parameter 1.4 Quick reference data Table 1. Quick reference data ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, ; unless otherwise specified. Conditions [1] C O Wireless infrastructure (base station, repeater) E-metering Broadband CPE Satellite Master Antenna TV (SMATV) Industrial applications W-LAN / ISM / RFID N FI PA D E N NY TI A L Min 5 400 O M 400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 25 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 3.3 V / 5 V single supply operation Power savings features: Simple quiescent current adjustment allows class-AB operation Logic-level shutdown control pin reduces supply current to 4 μA ESD protection at all pins Typ - Max 170 2700 Unit mA MHz adjustable quiescent collector current frequency D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A R D FT R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D Table 1. Quick reference data …continued ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, ; unless otherwise specified. R D FT A FT A R D R D FT A FT A D FT A F A R D A R Symbol Gp PL(1dB) IP3O [1] [2] [3] Parameter gain power output power at 1 dB gain compression output third-order intercept point Conditions f = 2140 MHz f = 2140 MHz f = 2140 MHz [3] [3] [2][3] Min - Typ 15 25 38 Max - Unit dB dBm dBm FT A R D FT D D R A FT A Operation outside this range is possible but parameters are not guaranteed. Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 850 MHz to 1000 MHz; f2 = 1800 MHz to 2400 MHz; higher IMD3 product. Applicable to class-A operation; ICq = mA. 2. Pinning information C N FI 1 SOT908-1 Fig 1. BGA7124_1 C O Transparent top view Pin configuration PA D E N NY TI A L 8 7 6 5 GND paddle 2.1 Pinning O M 2 3 4 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 00.07 — 16 July 2009 2 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 2.2 Pin description Table 2. Symbol n.c. RF_OUT/VCC VCC(bias) SHDN RF_IN ICQ_ADJ GND [1] [2] [3] R D FT A FT A F A Pin description Pin 1, 4 2, 3 5 6 7 8 GND paddle Description not connected D A R FT D R D FT A D RF output for the power amplifier and DC supply input for the RF transistor collector[1] bias supply voltage[2] shutdown control function enabled / disabled RF input for the power amplifier[1] ICq quiescent collector current adjustment by an external resistor RF ground and DC ground[3] R D FT A R A This pin is DC-coupled and requires an external DC-blocking capacitor. RF decoupled. 3. Ordering information Table 3. Ordering information Name Type number Package BGA7124 PA D E N NY TI A L Description VCC(BIAS) ICQ_ADJ bias enable bandgap V/I converter The center metal base of the SOT908-1 also functions as heatsink for the power amplifier. Version SOT908-1 4. Functional diagram C SHDN O O C RF_IN N FI M HVSON8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 × 3 × 0.85 mm RF_OUT / VCC GND Fig 2. BGA7124_1 Functional diagram © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 00.07 — 16 July 2009 3 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 5. Shutdown control Table 4. Idle TX Shutdown control Function description shutdown control enabled 0 shutdown control enabled 1 Mode Mode description medium power MMIC fully off; minimal supply current medium power MMIC transmit mode R D FT A D FT A R D SHDN Unit FT A R D F A A R FT D D R A digital logic digital logic FT A 6. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC ICC Pi(RF) Ptot Tcase Tj Parameter supply voltage supply current Conditions VCC = 5.2 V Min −40 Max 5.2 +85 150 Unit V mA dBm W °C °C RF input power total power dissipation case temperature junction temperature Symbol Rth(j-case) Parameter O Table 6. Thermal characteristics M 7. Thermal characteristics PA D E N NY TI A L Conditions Tcase = 85 °C; VCC = 5 V; ICC = 85 mA Conditions range for VCC = V (typ) range for VCC = V (typ) 3.0 4.8 5 VCC = 5.2 V SHDN = VI(D)L(SHDN); [1] Typ 25 Max 30 Unit K/W C Symbol VCC ICq ICC ICC(SHDN) VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) II(D)H(SHDN) [1] Parameter C O Table 7. Characteristics ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 3.3 V / 5 V; Tcase = 25 °C, ; unless otherwise specified. Min Typ Max 3.3 5.0 4 3.6 5.2 170 Unit V V mA supply voltage adjustable quiescent collector current supply current shutdown supply current shutdown logic LOW digital input voltage shutdown logic HIGH digital input voltage shutdown logic LOW digital input current shutdown logic HIGH digital input current SHDN = VI(D)L(SHDN) SHDN = VI(D)H(SHDN) [1] [1] N 8. Static characteristics FI thermal resistance from junction to case 2 0 2.5 - mA μA 1.5 VCC 1 1 V V μA μA Defined across VCC = 3.0 V to 3.6 V and 4.8 V to 5.2 V; Tcase = −40 °C to +85 °C. BGA7124_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 00.07 — 16 July 2009 4 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 9. Dynamic characteristics R D FT A D FT A R D Table 8. Characteristics at VCC = 5 V ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. Symbol f Gp Parameter frequency gain power f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz PL(1dB) output power at 1 dB gain compression f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz VCC = 5 V IP3O output third-order intercept point Conditions [1] [2] [2] [2] [2] [2] [2] [2] [2] FT A R D F A A R FT D FT A Min 400 - Typ 23 16 15 25 25 25 38 38 38 4.5 5.5 6.5 Max 2700 - Unit MHz dB dB dB dB dBm dBm dBm dB dBm dBm dBm dB dB dB dB dB dB dB dB dB dB dB dB dB mA D R A NF noise figure RLin input return loss C FI N RLout output return loss O C ICC [1] [2] [3] [4] supply current Operation outside this range is possible but parameters are not guaranteed. Applicable to class-A operation; ICq = 175 mA. Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 840 MHz to 960 MHz; f2 = 1900 MHz to 2200 MHz; higher IMD3 product. Defined at PIN = −40 dBm; small signal conditions. BGA7124_1 PA D E N NY TI A L [2][3] [2][3] [2][3] [2][3] [2][4] [2][4] [2][4] [2][4] [2] [2] [2] [2] [2] [2] [2] [2] [2] O M f = 900 MHz −12.0 −10.0 −11.0 −8.0 −14.0 −13.0 175 f = 900 MHz © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 00.07 — 16 July 2009 5 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A R D FT R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D Table 9. Characteristics at VCC = 3.3 V ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 3.3 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. R D FT A FT A R D R D FT A FT A D FT A F A R D A R FT A Symbol f Gp Parameter frequency gain power Conditions [1] Min 400 [2][3] [2][3] [2][3] [2][3] [2][3] [2][3] [2][3] [2][3] [2][3][4] [2][3][4] [2][3][4] [2][3][4] [2][3][5] [2][3][5] [2][3][5] [2][3][5] [3] [3] [3] [3] [3] [3] [3] [3] [2][3] Typ 16 23 36 4.7 175 Max 2700 - Unit FT D FT A MHz dB dB dB dB R D f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz D R A PL(1dB) output power at 1 dB gain compression f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz dBm dBm dBm dB dBm dBm dBm dB dB dB dB dB dB dB dB dB dB dB dB dB mA NF noise figure RLin input return loss C O C RLout output return loss N ICC [1] [2] [3] [4] [5] supply current Operation outside this range is possible but parameters are not guaranteed. Defined across VCC = 3.0 V to 3.6 V; Tcase = −40 °C to +85 °C. Applicable to class-A operation; ICq = 175 mA. Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 850 MHz to 1000 MHz; f2 = 1800 MHz to 2400 MHz; higher IMD3 product. Defined at PIN = −40 dBm; small signal conditions. 10. Reliability information Table 10. HTOL Reliability Intrinsic failure rate XX confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor determined by Arrhenius Life test Conditions BGA7124_1 FI PA D E N NY TI A L f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 900 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz f = 1900 MHz f = 2140 MHz f = 2450 MHz VCC = 3.3 V f = 900 MHz f = 900 MHz Rev. 00.07 — 16 July 2009 IP3O output third-order intercept point f = 900 MHz O M © NXP B.V. 2009. All rights reserved. Objective data sheet 6 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 11. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm R D FT A D FT A R D FT A R D F A A R FT D SOT908-1 FT A D R A 0 1 scale 2 mm X D B A PA D E N NY TI A L E A A1 detail X v w M M c O terminal 1 index area 1 e1 e M terminal 1 index area b 4 CAB C C y1 C y L C Eh O N FI 5 exposed tie bar (4×) exposed tie bar (4×) DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 REFERENCES IEC JEDEC MO-229 JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05 A(1) max. 1 A1 0.05 0.00 b 0.3 0.2 c 0.2 D(1) 3.1 2.9 Dh 2.25 1.95 E(1) 3.1 2.9 Eh 1.65 1.35 e 0.5 e1 1.5 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1 Fig 3. BGA7124_1 Package outline SOT908-1 (HVSON8) © NXP B.V. 2009. All rights reserved. Objective data sheet C 8 Dh Rev. 00.07 — 16 July 2009 7 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 12. Abbreviations Table 11. Acronym CPE ESD HTOL ISM MMIC RFID TX W-LAN Abbreviations Description Customer-Premises Equipment ElectroStatic Discharge High Temperature Operating Life Industrial, Scientific and Medical Monolithic Microwave Integrated Circuit Radio Frequency IDentification Transmit Wideband Code Division Multiple Access R D FT A D FT A R D FT A R D F A A R FT D D R A FT A Table 12. Revision history Release date Document ID BGA7124_1 C BGA7124_1 C O N FI PA D E N NY TI A L Data sheet status Change notice Objective data sheet Rev. 00.07 — 16 July 2009 13. Revision history Supersedes O M © NXP B.V. 2009. All rights reserved. Objective data sheet 8 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 14. Legal information 14.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] R D FT A D FT A R D FT A R D F A A R FT D Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. FT A D R A Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 14.3 Disclaimers O Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. N General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. C C 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGA7124_1 FI PA D E N NY TI A L 14.4 Trademarks Rev. 00.07 — 16 July 2009 M Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. O Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. © NXP B.V. 2009. All rights reserved. Objective data sheet 9 of 10 D D D D A R FT D A R FT A R A R NXP Semiconductors BGA7124 FT FT R D R D FT A FT A D R D A R FT A FT R D R D A R FT R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D R D FT A FT A R D FT A 16. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Reliability information . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 R D FT A D FT A R D FT A R D F A A R FT D D R A FT A C C O N Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. FI © NXP B.V. 2009. PA D E N NY TI A L All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 July 2009 Document identifier: BGA7124_1 O M