BGD885_01

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a voltage supply of 24 V (DC). PINNING - SOT115D PIN 1 2, 3, 5, 6, 7 4 8 9 input common BGD885 DESCRIPTION 10 V, 200 mA supply terminal +VB output handbook, halfpage 1 2 3 4 5 6 7 8 9 Side view MBK049 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz VB = 24 V − MIN. 16.5 MAX. 17.5 450 UNIT dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb DC supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 26 65 +100 +100 V dBmV °C °C UNIT 2001 Nov 02 2 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses second order distortion output voltage noise figure CONDITIONS f = 50 MHz f = 40 to 860 MHz f = 40 to 860 MHz f = 40 MHz; note 1 f = 800 to 860 MHz S22 d2 Vo F f = 40 MHz; note 1 f = 800 to 860 MHz note 2 dim = −60 dB; note 3 dim = −60 dB; note 4 f = 50 MHz f = 550 MHz f = 650 MHz f = 750 MHz f = 860 MHz Itot Notes 1. Decrease per octave of 1.5 dB. 2. Vp = 59 dBmV at fp = 349.25 MHz; Vq = 59 dBmV at fq = 403.25 MHz; measured at fp + fq = 752.5 MHz. 3. Measured according to DIN45004B: fp = 341.25 MHz; Vp = Vo; fq = 348.25 MHz; Vq = Vo −6 dB; fr = 350.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 339.25 MHz. 4. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. total current consumption (DC) note 5 MIN. 16.5 0.2 − 20 10 20 10 − 64 63 − − − − − − BGD885 SYMBOL Gp SL FL S11 MAX. 17.5 1.6 ±0.5 − − − − −53 − − 8 8 8 8 8 450 UNIT dB dB dB dB dB dB dB dB dBmV dBmV dB dB dB dB dB mA 2001 Nov 02 3 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 BGD885 1 2 3 4 5 6 7 8 9 input 10 V C1 C2 VB = 24 V output MEA094-2 Fig.2 Test circuit. List of components (see Fig.2) COMPONENT C1 C2 R DESCRIPTION ceramic multilayer capacitor ceramic multilayer capacitor resistor 1 nF 56 Ω, 2 W VALUE 1 nF (max.) 2001 Nov 02 4 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads BGD885 SOT115D D E Z A2 1 A L F S W d U2 B yMB P Q e1 e q2 q1 b yMB yMB wM 2 3 4 5 6 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L Q ∅P min. max. 8.8 4.15 3.85 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115D REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-10 2001 Nov 02 5 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BGD885 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 02 6 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier NOTES BGD885 2001 Nov 02 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/07/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09031