BGD902

BGD902 860 MHz, 18.5 dB gain power doubler amplifier Rev. 08 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. 1.2 Features I I I I I I Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 1.3 Applications I CATV systems operating in the 40 MHz to 900 MHz frequency range. 1.4 Quick reference data Table 1. Symbol Gp Itot [1] Quick reference data Parameter power gain total current consumption (DC) Conditions f = 50 MHz f = 900 MHz [1] Min 18.2 19 405 Typ 18.5 19.5 420 Max 18.8 20 435 Unit dB dB mA The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2. Pinning information Table 2. Pin 1 2, 3 5 7, 8 9 Pinning Description input common +VB common output 2378 sym095 Simplified outline Symbol 5 1 9 13579 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 3. Ordering information Table 3. Ordering information Package Name BGD902 Description rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads Version SOT115J Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VB Vi Tstg Tmb Parameter supply voltage RF input voltage storage temperature mounting base temperature Conditions Min −40 −20 Max 30 70 +100 +100 Unit V dBmV °C °C 5. Characteristics Table 5. Characteristics Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Gp SL FL Parameter power gain slope cable equivalent flatness of frequency response input return losses Conditions f = 50 MHz f = 900 MHz f = 40 MHz to 900 MHz f = 40 MHz to 900 MHz Min 18.2 19 0.4 Typ 18.5 19.5 0.9 ±0.15 Max 18.8 20 1.4 ±0.3 Unit dB dB dB dB s11 f = 40 MHz to 80 MHz f = 80 MHz to 160 MHz f = 160 MHz to 320 MHz f = 320 MHz to 550 MHz f = 550 MHz to 650 MHz f = 650 MHz to 750 MHz f = 750 MHz to 900 MHz 21 22 21 18 17 16 16 25 23 20 20 19 18 17 23 24 24 23 23 24 26 32 31 29 28 31 29 22 - dB dB dB dB dB dB dB dB dB dB dB dB dB dB 2 of 10 s22 output return losses f = 40 MHz to 80 MHz f = 80 MHz to 160 MHz f = 160 MHz to 320 MHz f = 320 MHz to 550 MHz f = 550 MHz to 650 MHz f = 650 MHz to 750 MHz f = 750 MHz to 900 MHz BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier Table 5. Characteristics …continued Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol s21 CTB Parameter phase response composite triple beat Conditions f = 50 MHz 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz 77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 650 MHz; Vo = 49.5 dBmV at 860 MHz Xmod cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz 77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 860 MHz; Vo = 49.5 dBmV at 860 MHz CSO composite second order distortion 49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz 77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz 110 chs; fm = 250 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 250 MHz; Vo = 49.5 dBmV at 860 MHz IMD2 second order distortion [1] [2] [3] [4] [5] [1] [2] [1] [2] Min −45 64.5 65.5 67.5 48.5 50 [9] Typ −68.5 −70 −63.5 −60 −64 −58.5 −66.5 −69.5 −66 −64.5 −63 −61 −65 −72 −65 −61 −67 −62 −80 −83 −84 66 67 69 49.5 53 4.5 5 5.5 6.5 420 Max +45 −67 −68 −62 −58 −62 −56.5 −64 −67 −63.5 −62 −60 −58 −62 −67 −60 −58 −63 −58 −74 −77 −78 5 5.5 6.5 8 435 Unit deg dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV dBmV dBmV dB dB dB dB mA Vo output voltage IMD = −60 dB [6] [7] [8] CTB compression = 1 dB; 129 chs flat; f = 859.25 MHz CSO compression = 1 dB; 129 chs flat; f = 860.5 MHz F noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 900 MHz Itot total current consumption (DC) Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). Tilt = 12.5 dB (50 MHz to 860 MHz). 405 [1] [2] [3] [4] [5] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. © NXP B.V. 2007. All rights reserved. BGD902_8 Product data sheet Rev. 08 — 7 June 2007 3 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier [6] [7] [8] [9] Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. −50 CTB (dB) −60 (1) (2) (3) (4) (2) (3) (4) (1) mda980 52 Vo (dBmV) 48 −50 Xmod (dB) −60 mda981 52 Vo (dBmV) (1) (2) (3) (4) (1) 48 −70 44 −70 44 −80 40 −80 40 −90 0 200 400 600 36 1000 800 f (MHz) −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 1. Composite triple beat as a function of frequency under tilted conditions Fig 2. Cross modulation as a function of frequency under tilted conditions BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 4 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier −50 CSO (dB) −60 mda982 52 Vo (dBmV) −50 CTB (dB) −60 mda942 52 Vo (dBmV) 48 (1) (2) (1) (2) (3) (4) (3) (1) (2) (3) (4) 48 −70 44 −70 44 (4) −80 40 −80 40 −90 0 200 400 600 36 800 1000 f (MHz) −90 0 200 400 600 36 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 3. Composite second order distortion as a function of frequency under tilted conditions Fig 4. Composite triple beat as a function of frequency under tilted conditions BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 5 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier −50 Xmod (dB) −60 mda943 52 Vo (dBmV) 48 −50 CSO (dB) −60 mda944 52 Vo (dBmV) 48 (1) (2) (3) (4) (1) (2) −70 44 −70 (3) (4) 44 −80 40 −80 40 −90 0 200 400 600 36 800 1000 f (MHz) −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 5. Cross modulation as a function of frequency under tilted conditions −20 CTB (dB) −30 mda945 Fig 6. Composite second order distortion as a function of frequency under tilted conditions −20 CSO (dB) −30 mda946 −40 −40 −50 −50 −60 (1) (2) (3) −60 (1) (2) (3) −70 40 45 50 Vo (dBmV) 55 −70 40 45 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. Fig 7. Composite triple beat as a function of output voltage Fig 8. Composite second order distortion as a function of output voltage BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 6 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yM B xM B b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. p Q max. q q1 q2 S U1 U2 W w x y 0.1 Z max. 3.8 mm 20.8 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-02-06 04-02-04 Fig 9. Package outline SOT115J BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 7 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 7. Revision history Table 6. BGD902_8 Modifications: Revision history Release date 20070607 Data sheet status Product data sheet Change notice Supersedes BGD902_7 Document ID • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 5 “Characteristics”: updated values of s11 and s22. Product data sheet Product specification Product specification Preliminary specification Preliminary specification Preliminary specification Preliminary specification BGD902_902MI_6 BGD902_902MI_5 BGD902_N_3 and BGD902MI_N_1 BGD902_N_2 BGD902_1 - BGD902_7 BGD902_902MI_6 BGD902_902MI_5 BGD902_N_3 BGD902_N_2 BGD902_1 BGD902MI_N_1 20050308 20011102 19990329 19980709 19980609 19980312 19980831 BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 8 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 8. Legal information 8.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 8.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 8.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 8.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 9. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BGD902_8 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 08 — 7 June 2007 9 of 10 NXP Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 10. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 9 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 June 2007 Document identifier: BGD902_8