BGS8H2X

BGS8H2 XS ON 6 SiGe:C low-noise amplifier MMIC with bypass switch for LTE 1 Rev. 4 — 20 August 2018 Product data sheet General description The BGS8H2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8H2 requires one external matching inductor. The BGS8H2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8H2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption. The BGS8H2 is optimized for 2300 MHz to 2690 MHz. 2 Features and benefits • • • • • • • • • • • • • • • • • Operating frequency from 2300 MHz to 2690 MHz Noise figure = 1.0 dB Gain 12.5 dB Bypass switch insertion loss of 2.3 dB High input 1 dB compression point of -1.5 dBm High in band IP3i of 4.0 dBm Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5.8 mA Power-down mode current consumption < 1 µA Integrated temperature stabilized bias for easy design. Requires only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232 • 180 GHz transit frequency - SiGe:C technology • Moisture sensitivity level 1 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 3 Applications • • • • BGS8H2 Product data sheet LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 2 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 4 Quick reference data Table 1. Quick reference data f = 2350 MHz, VCC = 2.8 V, VI(CTRL) ≥ 0.8 V, and Tamb = 25 °C. Input matched to 50 Ω using a 2.7 nH inductor in series. Unless otherwise specified. Symbol Parameter Conditions VCC supply voltage RF input AC coupled ICC supply current in gain mode [1] in bypass mode; VI(CTRL) < 0.3 V Gp power gain NF IP3i [1] [2] [3] [4] Typ Max Unit 1.5 - 3.1 V 3.8 5.8 7.8 mA - - 1 µA in gain mode; f = 2350 MHz [2][3] 10.5 12.5 14.5 dB in bypass mode; f = 2350 MHz [2][3] -3.8 -2.3 -0.8 dB in gain mode; f = 2350 MHz [2][3][4] - 1.0 1.5 dB input power at 1 dB gain compression in gain mode; f = 2350 MHz [2][3] -5.5 -1.5 - dBm input third-order intercept point [2][3] −1.0 +4.0 - dBm noise figure Pi(1dB) Min in gain mode; f = 2350 MHz Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit. E-UTRA operating band 40 (2300 MHz to 2400 MHz). Guaranteed by device design; not tested in production. PCB losses are subtracted. 5 Ordering information Table 2. Ordering information Type number Package Name Description Version BGS8H2 XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm SOT1232 OM17007 EVB BGS8H2 evaluation board - 6 Marking Table 3. Marking code Type number Marking code BGS8H2 P BGS8H2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 3 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 7 Block diagram VCC 2 CTRL RF_IN 6 BIAS/CONTROL 5 3 RF_OUT 1, 4 aaa-018718 Figure 1. Block diagram BGS8H2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 4 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 8 Pinning information 8.1 Pinning GND 4 3 RF_OUT RF_IN 5 2 VCC CTRL 6 1 GND Transparent top view aaa-022134 Figure 2. Pin configuration 8.2 Pin description Table 4. Pinning BGS8H2 Product data sheet Symbol Pin Description GND 1 ground VCC 2 supply voltage RF_OUT 3 RF out GND_RF 4 ground RF RF_IN 5 RF in CTRL 6 gain control, switch between gain and bypass mode All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 5 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 9 Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). See legal section: "disclaimers" paragraph "Limiting values". Symbol VCC Parameter Conditions supply voltage VI(CTRL) VI(RF_IN) VI(RF_OUT) Min Max Unit [1] -0.5 +5.0 V VI(CTRL) < VCC + 0.6 V [1][2] -0.5 +5.0 V DC; VI(RF_IN) < VCC + 0.6 V [1][2] -0.5 +5.0 V [1][2][3] -0.5 +5.0 V - 26 dBm - 55 mW RF input AC coupled input voltage on pin CTRL input voltage on pin RF_IN input voltage on pin RF_OUT DC; VI(RF_OUT) < VCC + 0.6 V [1] Pi input power Ptot total power dissipation Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage Human Body Model (HBM) according to ANSI/ESDA/JEDEC standard JS-001 - ±2 kV Charged Device Model (CDM) according to JEDEC standard JESD22-C101C - ±1 kV [1] [2] [3] Tsp ≤ 130 °C Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit. Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V. The RF input and RF output are AC coupled through internal DC blocking capacitors. 10 Recommended operating conditions Table 6. Operating conditions Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage [1] 1.5 - 3.1 V Tamb ambient temperature -40 +25 +85 °C VI(CTRL) input voltage on pin CTRL OFF state - - 0.3 V ON state 0.8 - Vcc V [1] Stressed with pulses of 1 s in duration. VCC connected to a power supply with 500 mA current limit. 11 Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point BGS8H2 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 Typ Unit 225 K/W © NXP B.V. 2018. All rights reserved. 6 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 12 Characteristics Table 8. Characteristics at VCC = 1.8 V 2300 MHz ≤ f ≤ 2690 MHz, VCC = 1.8 V, VI(CTRL) ≥ 0.8 V and Tamb = 25 °C. Input matched to 50 Ω using a 2.7 nH inductor in series. Unless otherwise specified. Symb ol Parameter Conditions Δφ phase variation between gain mode and bypass mode f = 2350 MHz [1] f = 2655 MHz Min Typ Max Unit -8 - +8 deg - - - deg 3.6 5.6 7.6 mA 10.0 12.0 14.0 dB 9.3 11.3 13.3 dB Gain mode ICC Gp supply current power gain f = 2350 MHz [1] [2] f = 2500 MHz RLin RLout ISL NF Pi(1dB) IP3i input return loss output return loss isolation noise figure input power at 1 dB gain compression input third-order intercept point f = 2655 MHz [1] [3] 8.5 10.5 12.5 dB f = 2350 MHz [2] - 7.5 - dB f = 2655 MHz [3] - 8.0 - dB f = 2350 MHz [2] - 9.0 - dB f = 2655 MHz [3] - 7.0 - dB f = 2350 MHz [2] - 22.0 - dB f = 2655 MHz [3] - 22.0 - dB f = 2350 MHz [1] [2] [4] - 1.05 1.5 dB f = 2655 MHz [1] [3] [4] - 1.15 1.6 dB f = 2350 MHz [1] [2] -9.5 -5.5 - dBm f = 2655 MHz [1] [2] -8.5 -4.5 - dBm f = 2350 MHz [1] [2] -2 +3.0 - dBm f = 2655 MHz [1] [3] -2 +3.0 - dBm 1 - - - K Rollett stability factor ton turn-on time time from VI(CTRL) ON, to 90 % of the gain - - 1.7 µs toff turn-off time time from VI(CTRL) OFF, to 10 % of the gain - - 0.6 µs Bypass mode ICC Gp RLin RLout supply current power gain input return loss output return loss BGS8H2 Product data sheet VI(CTRL) < 0.3 V - - 1 µA f = 2350 MHz [1] [2] -3.9 -2.4 -0.9 dB f = 2500 MHz [1] -4.5 -2.6 -1.1 dB f = 2655 MHz [1] [2] -4.2 -2.7 -1.2 dB f = 2350 MHz [2] - 12.0 - dB f = 2655 MHz [3] - 11.0 - dB f = 2350 MHz [2] - 11.0 - dB f = 2655 MHz [3] - 11.0 - dB All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 7 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE [1] [2] [3] [4] Guaranteed by device design; not tested in production. E-UTRA operating band 40 (2300 MHz to 2400 MHz). E-UTRA operating band 7 (2620 MHz to 2690 MHz). PCB losses are subtracted. Table 9. Characteristics at VCC = 2.8 V 2300 MHz ≤ f ≤ 2690 MHz, VCC = 2.8 V, VI(CTRL) ≥ 0.8 V and Tamb = 25 °C. Input matched to 50 Ω using a 2.7 nH inductor in series. Unless otherwise specified. Symbol Parameter Conditions Δφ phase variation between gain mode and bypass mode f = 2350 MHz [1] f = 2655 MHz Min Typ Max Unit -8 - +8 deg - - - deg 3.8 5.8 7.8 mA Gain mode ICC Gp supply current power gain f = 2350 MHz [1][2] f = 2500 MHz RLin RLout ISL NF Pi(1dB) IP3i input return loss output return loss isolation noise figure input power at 1 dB gain compression input third-order intercept point 10.5 12.5 14.5 dB 9.9 11.9 13.9 dB f = 2655 MHz [1][3] 9.2 11.2 13.2 dB f = 2350 MHz [2] - 8.0 - dB f = 2655 MHz [3] - 8.5 - dB f = 2350 MHz [2] - 10.0 - dB f = 2655 MHz [3] - 7.0 - dB f = 2350 MHz [2] - 23.0 - dB f = 2655 MHz [3] - 23.0 - dB f = 2350 MHz [1][2][4] - 1.00 1.5 dB f = 2655 MHz [1][3][4] - 1.10 1.6 dB f = 2350 MHz [1][2] -5.5 -1.5 - dBm f = 2655 MHz [1][3] -4.0 0.0 - dBm f = 2350 MHz [1][2] -1.0 +4.0 - dBm f = 2655 MHz [1][3] -1.0 +4.0 - dBm 1 - - K Rollett stability factor ton turn-on time time from VI(CTRL) ON, to 90 % of the gain - - 1.3 µs toff turn-off time time from VI(CTRL) OFF, to 10 % of the gain - - 0.3 µs BGS8H2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 8 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Symbol Parameter Conditions Min Typ Max Unit Bypass mode ICC supply current Gp power gain RLin RLout [1] [2] [3] [4] input return loss output return loss VI(CTRL) < 0.3 V - - 1 µA f = 2350 MHz [1][2] -3.8 -2.3 -0.8 dB f = 2500 MHz [1] -4.5 -2.4 -0.9 dB f = 2655 MHz [1][3] -4.0 -2.5 -1.0 dB f = 2350 MHz [2] - 12.0 - dB f = 2655 MHz [3] - 12.0 - dB f = 2350 MHz [2] - 12.0 - dB f = 2655 MHz [3] - 12.0 - dB Guaranteed by device design; not tested in production. E-UTRA operating band 40 (2300 MHz to 2400 MHz). E-UTRA operating band 7 (2620 MHz to 2690 MHz). PCB losses are subtracted. BGS8H2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 9 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 13 Application information 13.1 LTE LNA Vcc VCTRL RFin L1 6 5 IC1 1 C1 RFout 2 3 4 aaa-006409 For a list of components, see Table 10. Figure 3. Schematics LTE LNA evaluation board Table 10. List of components For schematics, see Figure 3. BGS8H2 Product data sheet Component Description Value Remarks C1 decoupling capacitor 1 μF to suppress power supply noise IC1 BGS8H2 - NXP Semiconductors L1 high-quality matching inductor 2.7 nH Murata LQW15A All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 10 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 14 Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (6×) A D SOT1232 e 3 4 e1 E v e1 1 pin 1 index area pin 1 index area A1 B y 6 v y1 C A A B A B b (6×) L (6×) C (4×) 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 D E min 0.34 0.65 1.05 nom 0.37 0.70 1.10 max 0.40 0.04 0.75 1.15 e1 e b 0.4 0.4 L 0.17 0.17 0.20 0.20 0.25 0.25 V Y Y1 0.1 0.05 0.1 Note 1. Dimension A is including plating thickness. Outline version sot1232_po References IEC JEDEC JEITA European projection Issue date 13-04-12 13-11-08 SOT1232 Figure 4. Package outline SOT1232 (XSON6) BGS8H2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 11 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 15 Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A, or equivalent standards. msc896 16 Abbreviations Table 11. Abbreviations Acronym Description ESD ElectroStatic Discharge HBM Human Body Model LTE Long-Term Evolution MMIC Monolithic Microwave Integrated Circuit PCB Printed-Circuit Board SiGe:C Silicon Germanium Carbon 17 Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGS8H2 v.4 20180820 Product data sheet - BGS8H2 v.3 Modifications: changed status from company confidential to public BGS8H2 v.3 20180629 Modifications: changed VI(CTRL) Max ON state value to Vcc at recommended operating conditions BGS8H2 v.2 20160404 Modifications: • added phase variation Table 8 on page 5 and Table 9 on page 6 BGS8H2 v.1 20151222 BGS8H2 Product data sheet Product data sheet Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 - BGS8H2 v.2 BGS8H2 v.1 - © NXP B.V. 2018. All rights reserved. 12 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 18 Legal information 18.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. 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This document supersedes and replaces all information supplied prior to the publication hereof. BGS8H2 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 13 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for BGS8H2 Product data sheet such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 August 2018 © NXP B.V. 2018. All rights reserved. 14 / 15 BGS8H2 NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Contents 1 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 13.1 14 15 16 17 18 General description ............................................ 1 Features and benefits .........................................1 Applications .........................................................2 Quick reference data .......................................... 3 Ordering information .......................................... 3 Marking .................................................................3 Block diagram ..................................................... 4 Pinning information ............................................ 5 Pinning ............................................................... 5 Pin description ................................................... 5 Limiting values .................................................... 6 Recommended operating conditions ................ 6 Thermal characteristics ......................................6 Characteristics .................................................... 7 Application information .................................... 10 LTE LNA .......................................................... 10 Package outline .................................................11 Handling information ........................................ 12 Abbreviations .................................................... 12 Revision history ................................................ 12 Legal information .............................................. 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2018. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2018 Document identifier: BGS8H2