BGU8052X

BGU8052 HW SO N8 Low noise high linearity amplifier 1 Rev. 6 — 8 June 2017 Product data sheet COMPANY PUBLIC General description The BGU8052 is, also known as the BGTS1001M, a low noise high linearity amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems. The LNA has a high input and output return loss and is designed to operate between 1.5 GHz and 2.5 GHz. It is housed in a 2 mm × 2 mm × 0.75 mm 8-terminal plastic thin small outline package. The LNA is ESD protected on all terminals. 2 Features and benefits • • • • • • • • • • • 3 Low noise performance: NF = 0.50 dB High linearity performance: IP3O = 36 dBm High input return loss > 15 dB High output return loss > 20 dB Unconditionally stable up to 20 GHz Programmable bias current (via resistor) Small 8-terminal leadless package 2 mm × 2 mm × 0.75 mm ESD protection on all terminals Moisture sensitivity level 1 Fast shut down to support TDD systems 3 V to 5 V single supply Applications • • • • • • Wireless infrastructure Low noise and high linearity applications LTE, W-CDMA, CDMA, GSM General-purpose wireless applications TDD or FDD systems Suitable for small cells BGU8052 NXP Semiconductors Low noise high linearity amplifier 4 Quick reference data Table 1. Quick reference data f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; Rbias = 5.1 kΩ; unless otherwise specified. All RF parameters are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 1900 MHz. Symbol Parameter Conditions ICC on state 36 48 60 mA off state - 2.8 - mA on state 17 18.5 20 dB - -23 - dB - 0.50 - 18 - dBm 32 36 - dBm supply current Gass associated gain Min Typ Max Unit off state [1] NF noise figure PL(1dB) output power at 1 dB gain compression IP3O output third-order intercept point [1] 2-tone; tone spacing = 1 MHz;Pi = -15 dBm per tone 0.70 dB Connector and Printed-Circuit Board (PCB) losses have been de-embedded. 5 Ordering information Table 2. Ordering information Type number BGU8052 6 Package Name Description Version HWSON8 plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 × 2 × 0.75 mm SOT1327-1 Block diagram VBIAS n.c. BIAS RFIN RFOUT n.c. SHDN i.c. i.c. aaa-021372 Figure 1. Block diagram BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 2 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 7 Pinning information 7.1 Pinning terminal 1 index area VBIAS 1 8 i.c. RF_IN 2 7 RF_OUT n.c. 3 6 SHDN i.c. 4 5 i.c. aaa-009791 Transparent top view Figure 2. Pin configuration 7.2 Pin description Table 3. Pin description Symbol Pin Description VBIAS 1 bias voltage RF_IN 2 RF input n.c. 3 not connected i.c. 4, 5, 8 internally connected. Can be grounded or left open in the application. SHDN 6 shutdown RF_OUT 7 RF output GND exposed die pad ground BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 3 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 8 Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage - 6 V Vctrl(sd) shutdown control voltage - 3 V ICC supply current - 85 mA Pi(RF)CW continuous waveform RF input power - 20 dBm Tstg storage temperature -40 +150 °C Tj junction temperature - 150 °C - 510 mW [1] P power dissipation Tcase ≤ 125 °C VESD electrostatic discharge voltage Human Body Model (HBM) According to ANSI/ESDA/JEDEC standard JS-001-2010 - 1.5 kV Charged Device Model (CDM); According to JEDEC standard 22-C101B - 2 kV [1] Case is ground solder pad. 9 Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage 3.3 5 5.25 V Z0 characteristic impedance - 50 - Ω Tcase case temperature -40 - +85 °C 10 Thermal characteristics Table 6. Thermal characteristics Symbol Rth(j-case) [1] [2] Parameter Conditions thermal resistance from junction to case [1] [2] Typ Unit 50 K/W Case is ground solder pad. Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air. BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 4 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 11 Characteristics Table 7. Characteristics f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; Rbias = 5.1 kΩ; unless otherwise specified. All RF parameters are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 1900 MHz. Symbol Parameter Conditions ICC supply current Gass associated gain Min Typ on state 36 48 60 mA off state - 2.8 - mA on state 17 18.5 20 dB - -23 - dB - 0.50 - 18 - dBm 32 36 - dBm 30 34 - dBm on state - 14.5 - dB off state - 8.4 - dB - 23 - dB off state [1] NF noise figure PL(1dB) output power at 1 dB gain compression IP3O output third-order intercept point 2-tone; tone spacing = 1 MHz;Pi = -15 dBm per tone 2-tone; tone spacing = 1 MHz;Pi = -15 dBm per tone RLin input return loss RLout output return loss ISL isolation [2] ts(pon) power-on settling time Pi = -20 dBm; SHDN (pin 6) from HIGH to LOW [2] ts(poff) power-off settling time Pi = -20 dBm; SHDN (pin 6) from LOW to HIGH [2] K Rollett stability factor both on state and off state up to f = 20 GHz Rpd(SHDN) pull-down resistance on pin SHDN [1] [2] Max Unit 0.70 dB - 23 - dB - 1.4 - μs - 0.4 - μs 1 - - - 20 - kΩ Connector and Printed-Circuit Board (PCB) losses have been de-embedded. For TDD systems where fast switching is required, the value of C1 and C2 should be changed to 100 pF. Table 8. Shutdown control VCC = 5 V; Tamb = 25 °C. [1] State Vctrl(sd) on state ≤ 0.6 V off state ≥ 1.2 V [1] Unit Voltage on pin 6 (SHDN). BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 5 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 11.1 Graphics Gp (dB) aaa-009775 25 Gp (dB) 23 20 21 15 (1) (2) (3) 19 10 17 5 15 1.5 aaa-009893 25 1.7 1.9 2.1 2.3 f (GHz) 2.5 VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C 0 1.5 (3) (2) (1) 1.7 1.9 2.1 2.3 f (GHz) 2.5 VCC= 5 V; Tamb= 25°C. (1) ICC= 30 mA (2) ICC= 45 mA (3) ICC= 60 mA Figure 3. Power gain as a function of frequency; typical Figure 4. Power gain as a function of frequency; typical values values NF (dB) aaa-009894 1 aaa-009895 0.8 NF (dB) 0.8 0.6 (3) 0.6 (2) 0.4 (1) 0.2 0.2 0 1.5 (3) (2) (1) 0.4 1.7 VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C 1.9 2.1 2.3 f (GHz) 2.5 0 1.5 1.7 1.9 2.1 2.3 f (GHz) 2.5 VCC= 5 V; Tamb= 25°C. (1) ICC= 30 mA (2) ICC= 45 mA (3) ICC= 60 mA Figure 5. Noise figure as a function of frequency; typical Figure 6. Noise figure as a function of frequency; typical values values BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 6 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier RLin (dB) aaa-009896 0 RLout (dB) aaa-009897 0 -6 -5 -12 (3) (2) (1) -10 (3) (2) (1) -18 -15 -24 -20 1.5 1.7 1.9 2.1 2.3 f (GHz) -30 1.5 2.5 1.7 1.9 2.1 2.3 f (GHz) 2.5 VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C Figure 7. Input return loss as a function of frequency; typical values Figure 8. Output return loss as a function of frequency; typical values aaa-009898 30 s-pars (dB) 20 K S21 aaa-009899 5 4 10 3 0 -10 S11 -20 S22 -30 2 S12 0 0.5 1 1.5 (3) (2) (1) 1 2 2.5 3 3.5 f (GHz) 0 4 0 4 8 12 16 f (GHz) 20 VCC= 5 V; Tamb= 25°C; ICC= 48 mA. VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C Figure 9. Wideband S-parameters as function of frequency; typical value Figure 10. Rollett stability factor as a function of frequency; typical values BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 7 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier aaa-009900 40 IP3O (dBm) aaa-009901 38 IP3O (dBm) 38 37 (1) (2) 36 (3) 36 34 35 32 (3) (1) (2) 30 1.4 1.6 1.8 2 2.2 2.4 f (GHz) 2.6 34 30 35 40 45 50 55 ICC (mA) 60 VCC= 5 V; Pi=-15 dBm per tone; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C VCC= 5 V; Pi=-15 dBm per tone; Tamb= 25°C. (1) f = 1500 MHz (2) f = 1900 MHz (3) f = 2500 MHz Figure 11. Output third-order intercept point as a function of frequency; typical values Figure 12. Output third-order intercept point as a function of supply current; typical values aaa-009902 20 aaa-009903 20 PL(1dB) (dBm) PL(1dB) (dBm) 19 (1) (3) (2) 19 (1) (2) 18 18 (3) 17 17 16 16 15 1.4 1.6 1.8 2 2.2 2.4 f (GHz) 2.6 15 30 35 40 45 50 55 ICC (mA) 60 VCC= 5 V; ICC= 48 mA. (1) Tamb=-40°C (2) Tamb= +25°C (3) Tamb= +85°C VCC= 5 V; Tamb= 25°C (1) f = 1500 MHz (2) f = 1900 MHz (3) f = 2500 MHz Figure 13. Output power at 1 dB gain compression as a function of frequency; typical values Figure 14. Output power at 1 dB gain compression as a function of supply current; typical values BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 8 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier aaa-020454 70 lcc (mA) 60 (1) (2) (3) (4) (5) 50 40 30 20 10 0 1 10 Rbias (kΩ) 102 Tamb=25°C (1) VCC= 3.0 V (2) VCC= 3.3 V (3) VCC= 4.0 V (4) VCC= 4.5 V (5) VCC= 5 V Figure 15. ICC as a function of Rbias, typical values BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 9 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier GND Vctrl(sd) VCC 12 Application information C4 R1 Rbias RFin C1 C3 1 8 2 7 3 6 4 5 L1 C2 RFout C5 aaa-009774 See Table 9 for a list of components. Figure 16. Schematic of application board Table 9. List of components See Figure 16 for schematics. Component Description Value C1, C2 capacitor 100 nF 100 pF Remarks recommended for TDD systems C3 capacitor 10 pF C4 capacitor 5.6 nF C5 capacitor 10 pF L1 inductor 15 nH R1 resistor 10 Ω Rbias resistor 5.1 kΩ VCC = 5 V 2.3 kΩ VCC = 3.3 V BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 10 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier Table 10. Typical performance BGU8052 application boardVCC = 5 V All RF parameters are measured at the application board as shown in Figure 16 with the components as listed in Table 9 while optimized for: f = 1900 MHz; VCC = 5 V; ICC = 48 mA and Tamb = 25 °C. Symbol Parameter Conditions f (MHz) 1500 1750 1850 1900 1950 2100 2300 2500 G gain 20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.0 RLin input return loss 12.4 13.8 14.3 14.5 14.7 15.2 16.0 16.5 RLout output return loss 23.0 23.7 23.4 23.2 23.0 22.5 22.0 22.0 PL(1dB) output power at 1 dB gain compression 18.5 18.9 18.5 19.0 18.0 18.8 18.2 17.2 IP3O output third-order intercept point [1] 36.8 36.2 36.3 36.3 36.0 36.3 35.6 35.4 [1] [2] 37.5 37.4 37.2 37.0 36.7 35.7 36.5 35.3 [3] 0.44 0.43 0.46 0.48 0.49 0.53 0.57 0.61 NF [1] [2] [3] noise figure 2-Tone; tone spacing = 1 MHz, Po = 5 dBm per tone. For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF. Connector and board losses not de-embedded. Table 11. Typical performance BGU8052 application board VCC = 3.3 V All RF parameters measured at application board shown in Figure 16. The components listed in Table 9 optimized for 1900 MHz; VCC =3.3 V; ICC= 48 mA; Tamb = 25 °C. Symbol Parameter Conditions f (MHz) 1500 1750 1850 1900 1950 2100 2300 2500 G gain 20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.5 RLin input return loss 12.3 13.9 14.5 14.7 14.5 14.8 15.3 15.5 RLout output return loss 21.6 23.5 24.0 23.8 23.3 22.6 21.2 20.4 PL(1dB) output power at 1 dB gain compression 16.2 16.0 16.0 16.2 15.8 15.8 15.5 14.9 IP3O output third-order intercept point [1] 33.3 32.9 31.9 32.5 32.0 31.6 30.6 31.1 [1] [2] 31.8 31.6 31.2 31.0 31.2 30.6 30.5 29.5 [3] 0.42 0.47 0.48 0.49 0.50 0.53 0.56 0.58 NF [1] [2] [3] noise figure 2 tone; spacing 1 MHz, Po = 5 dBm per tone. For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF. Connector and board losses not de-embedded. BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 11 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 13 Package outline HWSON8: plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 x 2 x 0.75 mm D B SOT1327-1 A X E terminal 1 index area A A1 c detail X e1 e terminal 1 index area 1/2 e v w b C A B C C y y1 C 1 4 L K Eh 8 5 Dh 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b max 0.80 0.05 0.30 nom 0.75 0.03 0.25 min 0.70 0.00 0.20 c 0.2 D(1) Dh E(1) Eh 2.05 1.25 2.05 0.65 2.00 1.20 2.00 0.60 1.95 1.15 1.95 0.55 e e1 0.5 1.5 K L 0.40 0.35 0.35 0.30 v 0.1 w y 0.05 0.05 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline version SOT1327-1 References IEC JEDEC JEITA sot1327-1_po European projection Issue date 12-04-11 12-04-15 MO-229 Figure 17. Package outline SOT1327-1 (HWSON8) BGU8052 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 12 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 14 Abbreviations Table 12. Abbreviations Acronym Description CDMA Code Division Multiple Access ESD ElectroStatic Discharge FDD Frequency-Division Duplexing GSM Global System for Mobile Communication LNA Low Noise Amplifier LTE Long-Term Evolution RF Radio Frequency TDD Time-Division Duplexing W-CDMA Wideband Code Division Multiple Access 15 Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU8052 v.6 20170608 Product data sheet - BGU8052 v.5 Modifications: • Table 4: the maximum value of VESD has been changed into 1.5 kV BGU8052 v.5 20170502 Modifications: • Table 5 "Recommended operating conditions": the minimum value of VCC has been changed into 3.3 V BGU8052 v.4 20170120 Modifications: • Section 1 "General description": added BTS1001M according to our new naming convention BGU8052 v.3 20160405 Modifications: • 3 V to 5 V single supply added to Features and benefits • Added Figure 1 "Block diagram" on page 2 • An additional curve added Figure "Output power at 1 dB gain compression as a function of supply current; typical values" on page 8 • Added remark to Rbias in Table 9 "List of components" • Added Table 11 "Typical performance BGU8052 application board VCC = 3.3 V" on page 11 BGU8052 v.2 20131230 Modifications: • Table 4 on page 3: The maximum value for Vctrl(sd) has been corrected to 3 V. • Table 10 on page 11: A correction has been made for the value of Gass at f = 1750 MHz. BGU8052 v.1 20131127 BGU8052 Product data sheet COMPANY PUBLIC Product data sheet Product data sheet Product data sheet Product data sheet Product data sheet - - - - All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 BGU8052 v.4 BGU8052 v.3 BGU8052 v.2 BGU8052 v.1 - © NXP B.V. 2017. All rights reserved. 13 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier 16 Legal information 16.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGU8052 Product data sheet COMPANY PUBLIC Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 14 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for BGU8052 Product data sheet COMPANY PUBLIC such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 6 — 8 June 2017 © NXP B.V. 2017. All rights reserved. 15 / 16 BGU8052 NXP Semiconductors Low noise high linearity amplifier Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 12 13 14 15 16 General description ............................................ 1 Features and benefits .........................................1 Applications .........................................................1 Quick reference data .......................................... 2 Ordering information .......................................... 2 Block diagram ..................................................... 2 Pinning information ............................................ 3 Pinning ............................................................... 3 Pin description ................................................... 3 Limiting values .................................................... 4 Recommended operating conditions ................ 4 Thermal characteristics ......................................4 Characteristics .................................................... 5 Graphics .............................................................6 Application information .................................... 10 Package outline .................................................12 Abbreviations .................................................... 13 Revision history ................................................ 13 Legal information .............................................. 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2017. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 June 2017 Document number: