BGU8063J

BGU8063 low-noise high-linearity amplifier Rev. 3.1 — 10 February 2021 1 Product data sheet General description The BGU8063 also known as the BTS3001H, is a high-linearity bypass amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems. The LNA has a high input and output return loss and is designed to operate between 2.5 GHz and 5 GHz. It is housed in a 3 mm x 3 mm x 0.85 mm with 10 terminals, in a plastic thin small outline package. The LNA is ESD protected on all terminals. 2 Features and benefits • • • • • • • • • • 3 Low noise performance: NF = 1.4 dB High-linearity performance: IP3o = 34 dBm High-input return loss > 10 dB High-output return loss > 10 dB Unconditionally stable up to 20 GHz Small 10-terminal leadless package 3 mm x 3 mm x 0.85 mm ESD protection on all terminals Moisture sensitivity level 1 Fast shut down to support TDD systems +5 V single supply Applications • • • • • • Wireless infrastructure Low noise and high-linearity applications LTE, W-CDMA, CDMA, GSM General-purpose wireless applications TDD or FDD systems Suitable for small cells BGU8063 NXP Semiconductors low-noise high-linearity amplifier 4 Quick reference data Table 1. Quick reference data f = 2500 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is optimized for f = 2500 MHz. Symbol Parameter Conditions Min Typ Max Unit ICC supply current LNA enable; bypass off - 75 90 mA LNA disable; bypass on - 3 5 mA LNA enable; bypass off 17 18.5 20 dB -2.2 -1.8 - dB - 1.4 2.2 dB - dBm Gass associated gain LNA disable; bypass on [1] NF noise figure LNA enable; bypass off PL(1dB) output power at 1 dB gain compression LNA enable; bypass off IP3O output third-order intercept point 2-tone; tone spacing = 1 MHz; PL = 5 dBm per tone [1] 17.5 19 LNA enable; bypass off 31 34 - dBm LNA disable; bypass on - 43 - dBm Connector and Printed-Circuit Board (PCB) losses have been de-embedded. 5 Ordering information Table 2. Ordering information Type number BGU8063 6 orderable part number Package Name Description Version BGU8063J HVSON10 plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 mm x 3 mm x 0.85 mm SOT650-1 Block diagram Vctrl2 Vctrl2 i.c. i.c. RFIN RFOUT/VCC i.c. n.c. n.c. Bias VCC aaa-023265 Figure 1. Block diagram BGU8063 BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 2 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 7 Pinning information 7.1 Pinning terminal 1 index area VCTRL2 1 10 VCTRL1 i.c. 2 9 i.c. RF_IN 3 8 RF_OUT i.c. 4 7 n.c. n.c. 5 6 VCC BGU806x aaa-018596 Transparent top view Figure 2. Pin configuration 7.2 Pin description Table 3. Pin description Symbol Product data sheet Description VCTRL2 1 voltage control 2 i.c. 2, 4, 9 internally connected, can be grounded or left open in the application RF_IN 3 RF input n.c. 5 not connected VCC 6 supply voltage n.c. 7 not connected RF_OUT 8 RF output VCTRL1 10 voltage control 1 GND BGU8063 Pin exposed die pad ground All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 3 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 8 Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC Conditions Min Max Unit supply voltage - 6 V Vi(CTRL1) input voltage on pin CTRL1 - 3.6 V Vi(CTRL2) input voltage on pin CTRL2 - 3.6 V Pi(RF)CW continuous waveform RF input power - 20 dBm Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C - 510 mW [1] P power dissipation Tcase ≤ 125 °C VESD electrostatic discharge voltage Human Body Model (HBM) according to ANSI/ESDA/JEDEC standard JS-001-2010 - 2 kV Charged Device Model (CDM); according to JEDEC standard 22-C101B - 1 kV [1] Case is ground solder pad. 9 Recommended operating conditions Table 5. Characteristics Symbol Parameter VCC Z0 Conditions Min Typ Max Unit supply voltage 4.75 5 5.25 V characteristic impedance - 50 - Ω Typ Unit 55 K/W 10 Thermal characteristics Table 6. Thermal characteristics Symbol Rth(j-case) [1] [2] Parameter Conditions [1] [2] thermal resistance from junction to case Case is ground solder pad. Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air. 11 Functional description Table 7. Control truth table VCC = 5 V; Tamb = 25 °C. Control signal setting [1] Mode of operation CTRL1 CTRL2 LNA bypass LOW HIGH disable on HIGH HIGH disable on LOW LOW enable off HIGH LOW disable off [1] A logic LOW is the result of an input voltage on that specific pin between -0.3 V and 0.7 V A logic HIGH is the result of an input voltage on the specific pin between 1.2 V and 3.6 V BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 4 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 12 Characteristics Table 8. Characteristics f = 2500 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is optimized for f = 2500 MHz. Symbol Parameter Conditions Min Typ Max Unit ICC LNA enable; bypass off - 75 90 mA LNA disable; bypass on - 3 5 mA LNA enable; bypass off 17 18.5 20 dB LNA disable; bypass on -2.2 -1.8 - dB - 0.4 - dB - 0.3 - dB - 1.4 2.2 dB supply current Gass Gflat associated gain gain flatness within 100 MHz bandwidth; LNA enable; bypass off 2500 MHz ≤ f ≤ 4000 MHz 3000 MHz ≤ f ≤ 3500 MHz [1] NF noise figure LNA enable; bypass off ΔG gain variation 2500 MHz ≤ f ≤ 4000 MHz - 4.9 - dB PL(1dB) output power at 1 dB gain compression LNA enable; bypass off 17.5 19 - dBm IP3O output third-order intercept point 2-tone; tone spacing = 1 MHz; PL = 5 dBm per tone LNA enable; bypass off 31 34 - dBm LNA disable; bypass on - 43 - dBm LNA enable; bypass off - -10 - dB LNA disable; bypass on - -20 - dB LNA enable; bypass off - -10 - dB LNA disable; bypass on - -20 - dB LNA disable; bypass off - 30 - dB LNA enable; bypass off - 25 - dB RLin RLout ISL input return loss output return loss isolation ts(pon) power-on settling time Pi = -20 dBm - 0.5 - µs ts(poff) power-off settling time Pi = -20 dBm - 0.1 - µs K Rollett stability factor both ON-state and OFF-state up to f = 20 GHz 1 - - - [1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded. BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 5 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 13 Graphics Gp (dB) aaa-040776 20 Gp (dB) 18 aaa-040777 20 18 (1) 16 (1) 16 (2) (2) (3) (3) 14 14 12 12 10 2.5 3 3.5 4 4.5 f (GHz) 5 10 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 3. Power gain as a function of frequency - Gain mode; typical values Figure 4. Power gain as a function of frequency - Gain mode; typical values aaa-040778 0 aaa-040779 0 Gp (dB) -0.5 Gp (dB) -0.5 -1 -1 (1) -1.5 -1.5 (2) (1) (3) (2) -2 -2 -2.5 -2.5 -3 2.5 3 3.5 4 4.5 f (GHz) 5 -3 2.5 (3) 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 5. Power gain as a function of frequency Bypass mode; typical values Figure 6. Power gain as a function of frequency Bypass mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 6 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier NF (dB) aaa-040781 5 NF (dB) 4 aaa-040782 5 4 3 3 (3) (2) 2 (3) 2 (2) (1) (1) 1 0 2.5 1 3 3.5 4 4.5 f (GHz) 0 2.5 5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 7. Noise figure as a function of frequency - Gain mode; typical values Figure 8. Noise figure as a function of frequency - Gain mode; typical values RLi (dB) aaa-040783 0 RLi (dB) aaa-040784 0 -4 -4 -8 -8 (1) (1) (2) -12 -16 -20 2.5 (2) -12 (3) (3) -16 3 3.5 4 4.5 f (GHz) 5 -20 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 9. Input return loss as a function of frequency Gain mode; typical values Figure 10. Input return loss as a function of frequency Gain mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 7 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier RLi (dB) aaa-040785 0 RLi (dB) -10 -10 -20 -20 -30 -40 2.5 -30 (1) (3) 3 aaa-040786 0 (3) (2) (2) (1) 3.5 4 4.5 f (GHz) 5 -40 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 11. Input return loss as a function of frequency Bypass mode; typical values Figure 12. Input return loss as a function of frequency Bypass mode; typical values RLo (dB) aaa-040788 0 RLo (dB) -10 aaa-040789 0 -10 (1) (2) (1) -20 (3) -20 (2) (3) -30 -30 -40 -40 -50 2.5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C 3 3.5 4 4.5 f (GHz) 5 -50 2.5 3 3.5 4 4.5 f (GHz) 5 Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 13. Output return loss as a function of frequency Figure 14. Output return loss as a function of frequency - Gain mode; typical values - Gain mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 8 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier RLo (dB) aaa-040790 0 RLo (dB) -8 -8 -16 -16 -24 aaa-040791 0 -24 (1) (2) (3) -32 (1) -32 (2) (3) -40 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C -40 2.5 3 3.5 4 4.5 f (GHz) 5 Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 15. Output return loss as a function of frequency Figure 16. Output return loss as a function of frequency - Bypass mode; typical values - Bypass mode; typical values aaa-040792 -25 ISL (dB) aaa-040793 -25 ISL (dB) -29 -29 -33 -33 (1) (1) (2) (2) -37 -41 -45 2.5 (3) -37 (3) -41 3 3.5 4 4.5 f (GHz) 5 -45 2.5 3 3.5 4 4.5 f (GHz) VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 17. Isolation as a function of frequency Isolation mode; typical values Figure 18. Isolation as a function of frequency Isolation mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 5 © NXP B.V. 2021. All rights reserved. 9 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier Spar (dB) aaa-040794 30 Spar (dB) 18 aaa-040795 0 (2) (3) -8 (2) 6 -16 -6 -24 (4) (1) -18 (1) -32 (3) -30 0 1 2 3 (4) 4 f (GHz) -40 5 0 1 2 3 4 f (GHz) 5 VCC = 5 V; Tamb = 25 °C 1. S11 2. S21 3. S12 4. S22 VCC = 5 V; Tamb = 25 °C 1. S11 2. S21 3. S12 4. S22 Figure 19. Wideband S-parameters as function of frequency - Gain mode; typical values Figure 20. Wideband S-parameters as function of frequency - Bypass mode; typical values Spar (dB) aaa-040796 0 (1) K (4) -10 aaa-040798 5 4 -20 (1) 3 (2) (3) -30 2 (2) -40 -50 (3) 0 1 2 3 1 4 f (GHz) 5 0 0 4 8 12 16 f (GHz) VCC = 5 V; Tamb = 25 °C 1. S11 2. S21 3. S12 4. S22 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Figure 21. Wideband S-parameters as function of frequency - Isolation mode; typical values Figure 22. Rollett stability factor as function of frequency - Gain mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 20 © NXP B.V. 2021. All rights reserved. 10 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier aaa-040799 40 IP3o (dBm) 37.5 aaa-040800 40 IP3o (dBm) 37.5 (1) 35 35 (2) 32.5 32.5 (1) 30 27.5 25 2.5 (2) 30 (3) (3) 27.5 3 3.5 4 4.5 f (GHz) 5 25 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 23. Output third-order intercept point as a function of frequency - Gain mode; typical values Figure 24. Output third-order intercept point as a function of frequency - Gain mode; typical values aaa-040802 50 IP3o (dBm) 47.5 IP3o (dBm) 47.5 45 45 42.5 42.5 40 35 2.5 40 (1) 3.5 (3) 37.5 (3) 3 (1) (2) (2) 37.5 aaa-040803 50 4 4.5 f (GHz) 5 35 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 25. Output third-order intercept point as a function of frequency - Bypass mode; typical values Figure 26. Output third-order intercept point as a function of frequency - Bypass mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 11 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier aaa-040804 25 Po(1dB) (dBm) 23 aaa-040805 25 Po(1dB) (dBm) 23 21 21 (1) (2) (3) 19 19 17 (1) 17 (2) (3) 15 2.5 3 3.5 4 4.5 f (GHz) 5 15 2.5 3 3.5 4 4.5 f (GHz) 5 VCC = 5 V 1. Tamb = -40 °C 2. Tamb = 25 °C 3. Tamb = 95 °C Tamb = 25 °C 1. VCC = 4.75 V 2. VCC = 5 V 3. VCC = 5.25 V Figure 27. Output power at 1 dB gain compression as a functional of frequency - Gain mode; typical values Figure 28. Output power at 1 dB gain compression as a functional of frequency - Gain mode; typical values BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 12 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 14 Application information VCTRL2 VCTRL1 GND VCC C7 R1 C6 R2 C5 RFin C1 1 10 2 9 3 8 4 7 5 6 C4 L1 C3 RFout C2 exposed diepad aaa-019599 See Table 9 for a list of components. Figure 29. Schematic of application board BGU8063 Table 9. List of components See Figure 29 for schematics. BGU8063 Product data sheet Component Description Value C1 capacitor 100 nF C2, C3 capacitor 100 pF C4 capacitor 1 nF C5 capacitor - C6 capacitor 10 nF C7 capacitor 1 μF L1 inductor 15 nH R1, R2 resistor 1 kΩ Remarks optional All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 13 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 15 Package outline HVSON10: plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 x 3 x 0.85 mm SOT650-1 0 1 2 mm scale X A B D A E A1 c detail X terminal 1 index area C e1 terminal 1 index area 1 e b y1 C v M C A B w M C 5 y L Eh 10 6 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 3.1 2.9 2.55 2.15 3.1 2.9 1.75 1.45 0.5 2 0.55 0.30 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT650-1 --- MO-229 --- EUROPEAN PROJECTION ISSUE DATE 01-01-22 02-02-08 Figure 30. Package outline SOT650-1 (HVSON10) BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 14 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 15.1 Footprint and solder information NXP recommends by default to apply the soldering and footprint guidelines as are released in POD SOT650-1 Footprint information for reflow soldering of HVSON10 package SOT650-1 Gx D (0.105) P C SPx nSPx Hy SPy tot SPy Gy SLy nSPy By Ay SPx tot SLx Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste occupied area DIMENSIONS in mm P Ay By C D SLx SLy SPx tot SPy tot SPx SPy Gx Gy Hy nSPx nSPy 0.500 4.000 2.200 0.900 0.240 2.400 1.500 1.400 0.650 0.550 0.650 3.300 3.300 4.250 2 1 Issue date 09-12-29 09-12-29 sot650-1_fr Figure 31. Footprint information BGU8063 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 15 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 16 Abbreviations Table 10. Abbreviations Acronym Description CDMA code division multiple-access ESD electroStatic discharge FDD frequency-division duplexing GSM global system for mobile communication LNA low noise amplifier LTE long-term evolution TDD time-division duplexing W-CDMA wideband code division multiple-access 17 Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU8063 v.3.1 20210210 Product data sheet CIN BGU8063 v.3 modification • corrected typo wrong product name was mentioned BGU3063 instead of BGU8063 BGU8063 v.3 20210127 modification • • • • BGU8063 v.2 20170127 modification • changed status to Product data sheet BGU8063v.1 20170112 BGU8063 Product data sheet Product data sheet CIN BGU8063 v.2 changed frequency range in all graphics from 4 GHz to 5 GHz changed location of truth table from the Characteristics topic to the Functional description topic added solder footprint information added orderable part number to the Ordering information Product data sheet Preliminary data sheet - BGU8063 v.1 - - All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 16 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier 18 Legal information 18.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 18.2 Definitions Draft — A draft status on a document indicates that the content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included in a draft version of a document and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. 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Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without BGU8063 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 17 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. BGU8063 Product data sheet Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Security — Customer understands that all NXP products may be subject to unidentified or documented vulnerabilities. Customer is responsible for the design and operation of its applications and products throughout their lifecycles to reduce the effect of these vulnerabilities on customer’s applications and products. Customer’s responsibility also extends to other open and/or proprietary technologies supported by NXP products for use in customer’s applications. NXP accepts no liability for any vulnerability. Customer should regularly check security updates from NXP and follow up appropriately. Customer shall select products with security features that best meet rules, regulations, and standards of the intended application and make the ultimate design decisions regarding its products and is solely responsible for compliance with all legal, regulatory, and security related requirements concerning its products, regardless of any information or support that may be provided by NXP. NXP has a Product Security Incident Response Team (PSIRT) (reachable at PSIRT@nxp.com) that manages the investigation, reporting, and solution release to security vulnerabilities of NXP products. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NXP — wordmark and logo are trademarks of NXP B.V. All information provided in this document is subject to legal disclaimers. Rev. 3.1 — 10 February 2021 © NXP B.V. 2021. All rights reserved. 18 / 19 BGU8063 NXP Semiconductors low-noise high-linearity amplifier Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 13 14 15 15.1 16 17 18 General description ............................................ 1 Features and benefits .........................................1 Applications .........................................................1 Quick reference data .......................................... 2 Ordering information .......................................... 2 Block diagram ..................................................... 2 Pinning information ............................................ 3 Pinning ............................................................... 3 Pin description ................................................... 3 Limiting values .................................................... 4 Recommended operating conditions ................ 4 Thermal characteristics ......................................4 Functional description ........................................4 Characteristics .................................................... 5 Graphics ...............................................................6 Application information .................................... 13 Package outline .................................................14 Footprint and solder information ...................... 15 Abbreviations .................................................... 16 Revision history ................................................ 16 Legal information .............................................. 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2021. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2021 Document identifier: BGU8063