;6
21
BGU8H1
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3 — 16 January 2017
Product data sheet
1. General description
The BGU8H1 is, also known as the LTE1001H, a Low-Noise Amplifier (LNA) for LTE
receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGU8H1 requires one external matching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 13 dB
gain at a noise figure of 0.9 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
2. Features and benefits
Operating frequency from 2300 MHz to 2690 MHz
Noise figure = 0.9 dB
Gain = 13 dB
High input 1 dB compression point of 1 dBm
High in band IP3i of 8 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.0 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
3. Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
4. Quick reference data
Table 1.
Quick reference data
f = 2350 MHz; VCC = 2.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
1.5
-
3.1
V
ICC
supply current
3.0
5.0
7.0
mA
Gp
power gain
[1]
-
13
-
dB
[1][2][3]
-
0.9
1.5
dB
NF
noise figure
Pi(1dB)
input power at 1 dB gain compression
[1][3]
IP3i
input third-order intercept point
[1][3]
[1]
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
PCB losses are subtracted.
[3]
Guaranteed by device design; not tested in production.
7
3
-
dBm
1
6
-
dBm
5. Ordering information
Table 2.
Ordering information
Type number
BGU8H1
Package
Name
Description
Version
XSON6
plastic extremely thin small outline package; no leads; 6 terminals; SOT1232
body 1.1 0.7 0.37 mm
6. Marking
Table 3.
Marking codes
Type number
Marking code
BGU8H1
F
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
2 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
7. Block diagram
9&&
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(1$%/(
5)B,1
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5)B287
DDD
Fig 1.
Block diagram
8. Pinning information
8.1 Pinning
*1'B5)
5)B287
5)B,1
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Fig 2.
Pin configuration
8.2 Pin description
Table 4.
BGU8H1
Product data sheet
Pin description
Symbol
Pin
Description
GND
1
ground
VCC
2
supply voltage
RF_OUT
3
RF output
GND_RF
4
ground RF
RF_IN
5
RF input
ENABLE
6
enable
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
3 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute maximum ratings are given as limiting values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol
Parameter
Conditions
VCC
supply voltage
RF input AC coupled
VI(ENABLE)
input voltage on pin ENABLE
VI(RF_IN)
input voltage on pin RF_IN
VI(RF_OUT)
input voltage on pin RF_OUT
Pi
input power
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
VESD
electrostatic discharge voltage
Min
Max
Unit
[1]
0.5
+5.0
V
VI(ENABLE) < VCC + 0.6 V
[1][2]
0.5
+5.0
V
DC; VI(RF_IN) < VCC + 0.6 V
[1][2]
0.5
+5.0
V
[1][2][3]
0.5
+5.0
V
-
26
dBm
-
55
mW
65
+150
C
DC; VI(RF_OUT) < VCC + 0.6 V
[1]
Tsp 130 C
-
150
C
Human Body Model (HBM) according to
ANSI/ESDA/JEDEC standard JS-001
-
2
kV
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
-
1
kV
[1]
Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit.
[2]
Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V.
[3]
The RF output is AC coupled through internal DC blocking capacitors.
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VCC
supply voltage
Conditions
1.5
-
3.1
V
Tamb
ambient temperature
40
+25
+85
C
VI(ENABLE)
input voltage on pin ENABLE
OFF state
-
-
0.3
V
ON state
0.8
-
-
V
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to
solder point
BGU8H1
Product data sheet
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
Typ
Unit
225
K/W
© NXP Semiconductors N.V. 2017. All rights reserved.
4 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
12. Characteristics
Table 8.
Characteristics at VCC = 1.8 V
2300 MHz f 2690 MHz; VCC = 1.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol Parameter
supply current
ICC
power gain
Gp
Conditions
Min
Typ
Max Unit
VI(ENABLE) 0.8 V
2.8
4.8
6.8
mA
VI(ENABLE) 0.3 V
-
-
1
A
-
13.0 -
dB
f = 2350 MHz
[1]
f = 2500 MHz
RLin
RLout
ISL
input return loss
output return loss
isolation
NF
noise figure
Pi(1dB)
input power at 1 dB
gain compression
input third-order intercept point
IP3i
K
Rollett stability factor
ton
turn-on time
toff
turn-off time
f = 2655 MHz
-
12.0 -
dB
f = 2350 MHz
[1]
-
8
-
dB
f = 2655 MHz
[2]
-
8
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1][3][4]
-
0.9
1.5
dB
f = 2655 MHz
[2][3]
-
1.1
-
dB
f = 2350 MHz
[1][4]
12
8
-
dBm
f = 2655 MHz
[2]
-
7
-
dBm
f = 2350 MHz
[1][4]
3
+2
-
dBm
f = 2655 MHz
[2]
-
5
-
dBm
1
-
-
-
time from VI(ENABLE) ON to 90 % of the gain
-
-
4
s
time from VI(ENABLE) OFF to 10 % of the gain
-
-
1
s
[1]
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
E-UTRA operating band 7 (2620 MHz to 2690 MHz).
[3]
PCB losses are subtracted.
[4]
Guaranteed by device design; not tested in production.
BGU8H1
Product data sheet
10.5 12.5 14.5 dB
[2]
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
5 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
Table 9.
Characteristics at VCC = 2.8 V
2300 MHz f 2690 MHz; VCC = 2.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol Parameter
supply current
ICC
Conditions
Min
Typ
Max Unit
VI(ENABLE) 0.8 V
3.0
5.0
7.0
mA
-
-
1
A
-
13
-
dB
VI(ENABLE) 0.3 V
power gain
Gp
f = 2350 MHz
[1]
f = 2500 MHz
RLin
RLout
ISL
input return loss
output return loss
isolation
NF
noise figure
Pi(1dB)
input power at 1 dB
gain compression
input third-order intercept point
IP3i
10.8 12.8 14.8 dB
f = 2655 MHz
[2]
-
12.5 -
dB
f = 2350 MHz
[1]
-
9
-
dB
f = 2655 MHz
[2]
-
9
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1]
-
22
-
dB
f = 2655 MHz
[2]
-
22
-
dB
f = 2350 MHz
[1][3][4]
-
0.9
1.5
dB
f = 2655 MHz
[2][3]
-
1.0
-
dB
f = 2350 MHz
[1][4]
7
3
-
dBm
f = 2655 MHz
[2]
-
1
-
dBm
f = 2350 MHz
[1][4]
1
6
-
dBm
f = 2655 MHz
[2]
-
8
-
dBm
1
-
-
-
K
Rollett stability factor
ton
turn-on time
time from VI(ENABLE) ON to 90 % of the gain
-
-
4
s
toff
turn-off time
time from VI(ENABLE) OFF to 10 % of the gain
-
-
1
s
[1]
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
E-UTRA operating band 7 (2620 MHz to 2690 MHz).
[3]
PCB losses are subtracted.
[4]
Guaranteed by device design; not tested in production.
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
6 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
13. Package outline
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