BGU8L1X

;6 21  BGU8L1 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 — 16 January 2017 Product data sheet 1. General description The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor. The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1 is optimized for 728 MHz to 960 MHz. 2. Features and benefits                 Operating frequency from 728 MHz to 960 MHz Noise figure = 0.7 dB Gain = 14 dB High input 1 dB compression point of 3 dBm High in band IP3i of 2 dBm Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 4.6 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Require only one input matching inductor Output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in a 6-pin leadless package 1.1 mm  0.7 mm  0.37 mm; 0.4 mm pitch: SOT1232  180 GHz transit frequency - SiGe:C technology  Moisture sensitivity level 1 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 3. Applications     LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules 4. Quick reference data Table 1. Quick reference data f = 882 MHz; VCC = 2.8 V; VI(ENABLE)  0.8 V; Tamb = 25 °C; input matched to 50  using a 15 nH inductor; unless otherwise specified. Symbol Parameter VCC ICC Conditions Min Typ Max Unit supply voltage 1.5 - 3.1 V supply current 2.6 4.6 6.6 mA 12.5 14.5 16.5 dB [1] power gain Gp NF [1][2][3] noise figure Pi(1dB) input power at 1 dB gain compression [1][3] IP3i input third-order intercept point [1][3] [1] E-UTRA operating band 5 (869 MHz to 894 MHz). [2] PCB losses are subtracted. [3] Guaranteed by device design; not tested in production. - 0.7 1.3 dB 7.0 3.0 - dBm 3.0 +2.0 - dBm 5. Ordering information Table 2. Ordering information Type number BGU8L1 BGU8L1 Product data sheet Package Name Description Version XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1.1  0.7  0.37 mm SOT1232 All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 2 of 11 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 6. Block diagram 9&&  %*8[ (1$%/( 5)B,1  %,$6&21752/   5)B287  DDD Fig 1. Block diagram 7. Pinning information 7.1 Pinning *1'B5)   5)B287 5)B,1   9&& (1$%/(   *1' 7UDQVSDUHQWWRSYLHZ DDD Fig 2. Pin configuration 7.2 Pin description Table 3. BGU8L1 Product data sheet Pin description Symbol Pin Description GND 1 ground VCC 2 supply voltage RF_OUT 3 RF output GND_RF 4 ground RF RF_IN 5 RF input ENABLE 6 enable All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 3 of 11 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 8. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute maximum ratings are given as limiting values of stress conditions during operation, that must not be exceeded under the worst probable conditions. Symbol Parameter Conditions Min Max Unit [1] VCC supply voltage RF input AC coupled 0.5 +5.0 V VI(ENABLE) input voltage on pin ENABLE VI(ENABLE) < VCC + 0.6 V [1][2] 0.5 +5.0 V DC; VI(RF_IN) < VCC + 0.6 V [1][2] 0.5 +5.0 V [1][2][3] 0.5 +5.0 V - 26 dBm - 55 mW VI(RF_IN) VI(RF_OUT) input voltage on pin RF_IN input voltage on pin RF_OUT DC; VI(RF_OUT) < VCC + 0.6 V [1] Pi input power Ptot total power dissipation Tstg storage temperature 65 +150 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage Human Body Model (HBM) according to ANSI/ESDA/JEDEC standard JS-001 - 2 kV Charged Device Model (CDM) according to JEDEC standard JESD22-C101C - 1 kV Tsp  130 °C [1] Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit. [2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V. [3] The RF output is AC coupled through internal DC blocking capacitors. 9. Recommended operating conditions Table 5. Operating conditions Symbol Parameter VCC Conditions Min Typ Max Unit supply voltage 1.5 - 3.1 V Tamb ambient temperature 40 +25 +85 C VI(ENABLE) input voltage on pin ENABLE OFF state - - 0.3 V ON state 0.8 - - V 10. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point BGU8L1 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 Typ Unit 225 K/W © NXP Semiconductors N.V. 2017. All rights reserved. 4 of 11 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 11. Characteristics Table 7. Characteristics at VCC = 1.8 V 728 MHz  f  960 MHz; VCC = 1.8 V; VI(ENABLE)  0.8 V; Tamb = 25 C; input matched to 50  using a 15 nH inductor; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VI(ENABLE)  0.8 V 2.2 4.2 6.2 mA VI(ENABLE)  0.3 V - - 1.0 A f = 740 MHz [1] - 14.5 - dB f = 882 MHz [2] 12.5 14.5 16.5 dB f = 943 MHz [3] - 14.0 - dB f = 740 MHz [1] - 9.0 - dB f = 882 MHz [2] - 13.0 - dB f = 943 MHz [3] - 11.0 - dB f = 740 MHz [1] - 12.0 - dB f = 882 MHz [2] - 20.0 - dB f = 943 MHz [3] - 20.0 - dB f = 740 MHz [1] - 25.0 - dB f = 882 MHz [2] - 25.0 - dB f = 943 MHz [3] - 26.0 - dB f = 740 MHz [1][4] - 0.7 - dB f = 882 MHz [2][4][5] - 0.7 1.3 dB f = 943 MHz [3][4] - 0.8 - dB f = 740 MHz [1] - 11.0 - dBm f = 882 MHz [2][5] 14.0 10.0 - dBm f = 943 MHz [3] - 9.0 - dBm input third-order intercept point f = 740 MHz [1] - 5.0 - dBm f = 882 MHz [2][5] 8.0 3.0 - dBm f = 943 MHz [3] - 2.0 - dBm 1 - - - supply current ICC Gp power gain RLin RLout ISL input return loss output return loss isolation NF noise figure Pi(1dB) IP3i input power at 1 dB gain compression K Rollett stability factor ton turn-on time time from VI(ENABLE) ON to 90 % of the gain - - 4 s toff turn-off time time from VI(ENABLE) OFF to 10 % of the gain - - 1 s [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. BGU8L1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 5 of 11 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE Table 8. Characteristics at VCC = 2.8 V 728 MHz  f  960 MHz; VCC = 2.8 V; VI(ENABLE)  0.8 V; Tamb = 25 C; input matched to 50  using a 15 nH inductor; unless otherwise specified. Symbol Parameter supply current ICC Conditions Min Typ Max Unit VI(ENABLE)  0.8 V 2.6 4.6 6.6 mA VI(ENABLE)  0.3 V Gp power gain RLin RLout ISL input return loss output return loss isolation NF noise figure Pi(1dB) input power at 1 dB gain compression input third-order intercept point IP3i - - 1 A f = 740 MHz [1] - 14.5 - dB f = 882 MHz [2] 12.5 14.5 16.5 dB f = 943 MHz [3] - 14.0 - dB f = 740 MHz [1] - 9.0 - dB f = 882 MHz [2] - 14.0 - dB f = 943 MHz [3] - 12.0 - dB f = 740 MHz [1] - 12.0 - dB f = 882 MHz [2] - 20.0 - dB f = 943 MHz [3] - 20.0 - dB f = 740 MHz [1] - 26.0 - dB f = 882 MHz [2] - 26.0 - dB f = 943 MHz [3] - 26.0 - dB f = 740 MHz [1][4] - 0.7 - dB f = 882 MHz [2][4][5] - 0.7 1.3 dB f = 943 MHz [3][4] - 0.8 - dB f = 740 MHz [1] - 5.0 - dBm f = 882 MHz [2][5] 7.0 3.0 - dBm f = 943 MHz [3] - 3.0 - dBm f = 740 MHz [1] - 1.0 - dBm f = 882 MHz [2][5] 3.0 +2.0 - dBm f = 943 MHz [3] - 2.0 - dBm K Rollett stability factor 1 - - - ton turn-on time time from VI(ENABLE) ON to 90 % of the gain - - 4.0 s toff turn-off time time from VI(ENABLE) OFF to 10 % of the gain - - 1.0 s [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. BGU8L1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 6 of 11 BGU8L1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 12. Package outline ;621SODVWLFH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGVWHUPLQDOVERG\[[PP î $ ' 627 H   H ( Y H   $ % Eî SLQ LQGH[DUHD SLQ LQGH[DUHD $ % \ Y $ % / î \ & $ & î  PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ ' ( PLQ    QRP    PD[     H H   E /       9 <