BGU8M1X

;6 21  BGU8M1 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 — 16 January 2017 Product data sheet 1. General description The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor. The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.8 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8M1 is optimized for 1805 MHz to 2200 MHz. 2. Features and benefits                 Operating frequency from 1805 MHz to 2200 MHz Noise figure = 0.8 dB Gain = 13 dB High input 1 dB compression point of 2 dBm High in band IP3i of 6 dBm Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Require only one input matching inductor Output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in a6-pin leadless package 1.1 mm  0.7 mm  0.37 mm; 0.4 mm pitch: SOT1232  180 GHz transit frequency - SiGe:C technology  Moisture sensitivity level 1 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 3. Applications     LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules 4. Quick reference data Table 1. Quick reference data f = 1843 MHz; VCC = 2.8 V; VI(ENABLE)  0.8 V; Tamb = 25 C; input matched to 50  using a 3.3 nH inductor; unless otherwise specified. Symbol Parameter VCC supply voltage 1.5 - 3.1 V ICC supply current 3.0 5.0 7.0 mA Gp power gain [1] - 13.5 - dB [1][2] - 0.8 dB - 2 - dBm - 4 - dBm NF Conditions noise figure Min Typ Pi(1dB) input power at 1 dB gain compression [1] IP3i input third-order intercept point [1] [1] E-UTRA operating band 3 (1805 MHz to 1880 MHz). [2] PCB losses are subtracted. Max Unit - 5. Ordering information Table 2. Ordering information Type number BGU8M1 Package Name Description Version XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1.1  0.7  0.37 mm SOT1232 6. Marking Table 3. Marking codes Type number Marking code BGU8M1 E BGU8M1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 2 of 11 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 7. Block diagram 9&&  %*8[ (1$%/( 5)B,1  %,$6&21752/   5)B287  DDD Fig 1. Block diagram 8. Pinning information 8.1 Pinning *1'B5)   5)B287 5)B,1   9&& (1$%/(   *1' 7UDQVSDUHQWWRSYLHZ DDD Fig 2. Pin configuration 8.2 Pin description Table 4. BGU8M1 Product data sheet Pin description Symbol Pin Description GND 1 ground VCC 2 supply voltage RF_OUT 3 RF output GND_RF 4 ground RF RF_IN 5 RF input ENABLE 6 enable All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 3 of 11 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute maximum ratings are given as limiting values of stress conditions during operation, that must not be exceeded under the worst probable conditions. Symbol Parameter Conditions VCC supply voltage RF input AC coupled VI(ENABLE) input voltage on pin ENABLE VI(RF_IN) input voltage on pin RF_IN VI(RF_OUT) input voltage on pin RF_OUT Pi input power Ptot total power dissipation Tstg storage temperature Tj junction temperature VESD electrostatic discharge voltage Min Max Unit [1] 0.5 +5.0 V VI(ENABLE) < VCC + 0.6 V [1][2] 0.5 +5.0 V DC; VI(RF_IN) < VCC + 0.6 V [1][2] 0.5 +5.0 V [1][2][3] 0.5 +5.0 V - 26 dBm - 55 mW 65 +150 C DC; VI(RF_OUT) < VCC + 0.6 V [1] Tsp  130 C - 150 C Human Body Model (HBM) according to ANSI/ESDA/JEDEC standard JS-001 - 2 kV Charged Device Model (CDM) according to JEDEC standard JESD22-C101C - 1 kV [1] Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit. [2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V. [3] The RF output is AC coupled through internal DC blocking capacitors. 10. Recommended operating conditions Table 6. Operating conditions Symbol Parameter VCC supply voltage Conditions 1.5 Min Typ Max Unit - Tamb ambient temperature 40 +25 +85 C VI(ENABLE) input voltage on pin ENABLE OFF state - - 0.3 V ON state 0.8 - - V 3.1 V 11. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point BGU8M1 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 Typ Unit 225 K/W © NXP Semiconductors N.V. 2017. All rights reserved. 4 of 11 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 12. Characteristics Table 8. Characteristics at VCC = 1.8 V 1805 MHz  f  2200 MHz; VCC = 1.8 V; VI(ENABLE)  0.8 V; Tamb = 25 C; input matched to 50  using a 3.3 nH inductor; unless otherwise specified. Symbol Parameter supply current ICC power gain Gp RLin RLout ISL input return loss output return loss isolation NF noise figure Pi(1dB) input power at 1 dB gain compression input third-order intercept point IP3i Conditions Min Typ Max Unit VI(ENABLE)  0.8 V 2.7 4.7 6.7 mA VI(ENABLE)  0.3 V - - 1 A f = 1843 MHz [1] - 13.5 - dB f = 1960 MHz [2] 11.0 13.0 15.0 dB f = 2140 MHz [3] - 12.5 - dB f = 1843 MHz [1] - 7 - dB f = 1960 MHz [2] - 8 - dB f = 2140 MHz [3] - 8 - dB f = 1843 MHz [1] - 20 - dB f = 1960 MHz [2] - 20 - dB f = 2140 MHz [3] - 18 - dB f = 1843 MHz [1] - 20 - dB f = 1960 MHz [2] - 20 - dB f = 2140 MHz [3] - 20 - dB f = 1843 MHz [1][4] - 0.8 - dB f = 1960 MHz [2][4][5] - 0.8 1.4 dB f = 2140 MHz [3][4] - 0.9 - dB f = 1843 MHz [1] - 8 - dBm f = 1960 MHz [2][5] 12 8 - dBm f = 2140 MHz [3] - 7 - dBm f = 1843 MHz [1] - 0 - dBm f = 1960 MHz [2][5] 4 +1 - dBm f = 2140 MHz [3] - 2 - dBm 1 - - - K Rollett stability factor ton turn-on time time from VI(ENABLE) ON to 90 % of the gain - - 4 s toff turn-off time time from VI(ENABLE) OFF to 10 % of the gain - - 1 s [1] E-UTRA operating band 3 (1805 MHz to 1880 MHz). [2] E-UTRA operating band 2 (1930 MHz to 1990 MHz). [3] E-UTRA operating band 1 (2110 MHz to 2170 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. BGU8M1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 5 of 11 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE Table 9. Characteristics at VCC = 2.8 V 1805 MHz  f  2200 MHz; VCC = 2.8 V; VI(ENABLE)  0.8 V; Tamb = 25 C; input matched to 50  using a 3.3 nH inductor; unless otherwise specified. Symbol Parameter supply current ICC Conditions Min Typ Max Unit VI(ENABLE)  0.8 V 3.0 5.0 7.0 mA VI(ENABLE)  0.3 V power gain Gp RLin RLout ISL input return loss output return loss isolation NF noise figure Pi(1dB) input power at 1 dB gain compression input third-order intercept point IP3i - - 1 A f = 1843 MHz [1] - 13.5 - dB f = 1960 MHz [2] 11.5 13.5 15.5 dB f = 2140 MHz [3] - 13 - dB f = 1843 MHz [1] - 8 - dB f = 1960 MHz [2] - 8 - dB f = 2140 MHz [3] - 9 - dB f = 1843 MHz [1] - 20 - dB f = 1960 MHz [2] - 20 - dB f = 2140 MHz [3] - 20 - dB f = 1843 MHz [1] - 20 - dB f = 1960 MHz [2] - 20 - dB f = 2140 MHz [3] - 20 - dB f = 1843 MHz [1][4] - 0.8 - dB f = 1960 MHz [2][4][5] - 0.8 1.4 dB f = 2140 MHz [3][4] - 0.9 - dB f = 1843 MHz [1] - 2 - dBm f = 1960 MHz [2][5] 6 2 - dBm f = 2140 MHz [3] - 2 - dBm f = 1843 MHz [1] - 4 - dBm f = 1960 MHz [2][5] 0 5 - dBm f = 2140 MHz [3] - 6 - dBm K Rollett stability factor 1 - - - ton turn-on time time from VI(ENABLE) ON to 90 % of the gain - - 4 s toff turn-off time time from VI(ENABLE) OFF to 10 % of the gain - - 1 s [1] E-UTRA operating band 3 (1805 MHz to 1880 MHz). [2] E-UTRA operating band 2 (1930 MHz to 1990 MHz). [3] E-UTRA operating band 1 (2110 MHz to 2170 MHz). [4] PCB losses are subtracted. [5] Guaranteed by device design; not tested in production. BGU8M1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 6 of 11 BGU8M1 NXP Semiconductors SiGe:C low-noise amplifier MMIC for LTE 13. Package outline ;621SODVWLFH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGVWHUPLQDOVERG\[[PP î $ ' 627 H   H ( Y H   $ % Eî SLQ LQGH[DUHD SLQ LQGH[DUHD $ % \ Y $ % / î \ & $ & î  PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ ' ( PLQ    QRP    PD[     H H   E /       9 <