BLC6G22-75

BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Rev. 01 — 7 February 2008 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 17 Gp (dB) 18.5 ηD (%) 31 IMD3 (dBc) −37[1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 690 mA: N Average output power = 17 W N Gain = 18.5 dB N Efficiency = 31 % N IMD3 = −37 dBc N ACPR = −41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLC6G22-75 (SOT895A) 1 3 2 2 3 sym112 1 BLC6G22LS-75 (SOT896B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLC6G22-75 BLC6G22LS-75 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895A SOT896B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 18 +150 225 Unit V V A °C °C BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 2 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 17 W Type BLC6G22-75 BLC6G22LS-75 Typ 0.9 0.75 Unit K/W K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 100 mA VDS = 28 V; ID = 690 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 5 A VGS = VGS(th) + 3.75 V; ID = 3.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.40 1.60 14.9 Typ 2 2.2 18.5 7.2 0.15 1.4 Max 2.40 2.60 3 280 Unit V V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) Gp IRL ηD IMD3 ACPR average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 17 W PL(AV) = 17 W PL(AV) = 17 W PL(AV) = 17 W Conditions Min 17.3 28 Typ 17 18.5 −9.2 31 −37 −41 Max −6.5 −34 −38.5 Unit W dB dB % dBc dBc third order intermodulation distortion PL(AV) = 17 W 7.1 Ruggedness in class-AB operation The BLC6G22-75 and BLC6G22LS-75 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz. BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 3 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 7.2 One-tone CW 20 Gp (dB) 19 001aah688 Gp 60 ηD (%) 50 18 ηD 40 17 30 16 20 15 10 14 0 20 40 60 80 0 100 PL (W) VDS = 28 V; IDq = 690 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 7.3 Two-tone CW 20 Gp (dB) 001aah689 60 ηD (%) 50 −20 IMD (dBc) −30 001aah690 IMD3 19 Gp 40 IMD5 30 ηD −40 18 20 −50 10 IMD7 17 0 40 80 120 0 160 200 PL(PEP) (W) −60 0 30 60 90 120 150 180 PL(PEP) (W) VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±100 kHz). VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±100 kHz). Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as function of peak envelope load power; typical values BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 4 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 7.4 2-carrier W-CDMA 21 Gp (dB) 20 001aah691 50 ηD (%) 40 ηD −25 IMD3, ACPR (dBc) −30 001aah692 IMD3 ACPR −35 19 Gp 18 20 −45 17 10 30 −40 −50 16 0 10 20 0 30 40 PL(AV) (W) −55 0 10 20 30 40 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values 8. Test information R1 VGG C22 C5 C6 C7 C8 C9 C4 R2 VDD C23 C14 C10 C11 C12 C13 C1 C21 input C2 C3 C20 output C15 C16 C17 C18 C19 001aah693 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 5 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor C22 − R1 C5 C7 C8 C4 C6 R2 C9 C10 C13 C11 C12 C14 + C23 C1 C2 C3 C21 C20 C16 C17 C15 C18 C19 Gen 6 input PCB V2.1 Taconic RF35 (Er 3.5) TP Geb. 6 output PCB V2.1 Taconic RF35 (Er 3.5) TP 001aah694 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. C1 C2, C3 C4 List of components (see Figure 6 and Figure 7) Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 5.6 pF 0.5 pF 0.6 pF 1.5 µF [1] [1] [1] Component Remarks C5, C6, C13, C14, multilayer ceramic chip capacitor C18, C19 C7, C8, C11, C16 C9 C10, C15 C12, C17 C20 C21 C22 C23 R1 R2 [1] Murata 0603 or capacitor of same quality [1] multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor SMD resistor SMD resistor 100 nF 15 pF 220 nF 10 pF 0.3 pF 20 pF 10 µF; 35 V 220 µF; 35 V 3.6 Ω 5.1 Ω [1] [1] [1] American Technical Ceramics type 100B or capacitor of same quality. BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 6 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 9. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A D F A D1 U1 q B C c 1 L w1 M A M B M H U2 3 p E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 p 3.38 3.12 Q 1.75 1.50 q 27.94 U1 34.16 33.91 U2 9.98 9.65 w1 0.25 0.01 w2 0.6 0.023 1.345 0.392 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT895A ISSUE DATE 06-02-21 06-04-03 Fig 8. Package outline SOT895A BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 7 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Plastic earless flanged cavity package; 2 leads SOT896B D F A 3 D1 D U1 1 L c H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 Q 1.75 1.50 U1 20.70 20.45 U2 9.98 9.65 w2 0.6 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.392 0.023 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT896B ISSUE DATE 06-02-21 06-04-03 Fig 9. Package outline SOT896B BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 8 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH LDMOS PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date 20080207 Data sheet status Objective data sheet Change notice Supersedes Document ID BLC6G22-75_BLC6G22LS-75_1 BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 9 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BLC6G22-75_BLC6G22LS-75_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 7 February 2008 10 of 11 NXP Semiconductors BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 February 2008 Document identifier: BLC6G22-75_BLC6G22LS-75_1