BLF147

BLF147 VHF power MOS transistor Rev. 06 — 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Industrial and military applications in the HF/VHF frequency range. handbook, halfpage BLF147 PINNING - SOT121B PIN 1 2 3 4 drain source gate source DESCRIPTION DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the “General” section of the handbook for fur ther information. 1 4 d g s 2 3 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION SSB, class-AB CW, class-B f (MHz) 28 108 VDS (V) 28 28 PL (W) 150 (PEP) 150 Gp (dB) >17 typ. 14 ηD (%) >35 typ. 70 d3 (dB) 35 typ. 40 d3 (dB) (note 2)