BLF3G21-6

BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 °C in a common source test circuit. Mode of operation CW Two-tone f (MHz) 2000 2000 PL (W) 7 6