BLF3G21-6
UHF power LDMOS transistor
Rev. 01 — 25 June 2008 Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 °C in a common source test circuit. Mode of operation CW Two-tone f (MHz) 2000 2000 PL (W) 7 6
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