BLF542,112

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A • High power gain PIN DESCRIPTION • Easy power control 1 source • Good thermal stability 2 source • Gold metallization ensures excellent reliability 3 gate • Withstands full load mismatch 4 drain • Designed for broadband operation. 5 source 6 source APPLICATIONS • Large signal amplifier applications in the UHF frequency range. handbook, halfpage 2 4 6 d DESCRIPTION s g N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. 1 3 5 Top view MAM390 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 28 5 >13 >50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 18 2 Philips Semiconductors Product specification UHF power MOS transistor BLF542 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V − 1.5 A − 20 W storage temperature −65 +150 °C junction temperature − 200 °C ID drain current (DC) Ptot total power dissipation Tstg Tj Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 8.8 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.4 K/W MRA735 10 MRA734 35 tot (W) 30 handbook, halfpage handbook, P halfpage ID (A) 25 1 (2) (1) (2) 20 (1) 15 10−1 10 5 10−2 1 10 VDS (V) 0 10 102 (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. 50 70 90 110 130 Th (oC) (1) Continuous operation. (2) Short time operation during mismatch. Fig.2 DC SOAR. 2003 Sep 18 30 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF542 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 0.1 mA; VGS = 0 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 10 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 160 240 − mS RDSon drain-source on-resistance ID = 0.3 A; VGS = 15 V − 3.3 5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.4 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 14 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 18 4 Philips Semiconductors Product specification UHF power MOS transistor BLF542 MBB777 4 MBB759 1.5 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 2 1 0 0.5 –2 0 –4 0 100 200 ID (mA) 0 300 5 10 VGS (V) 15 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MBB778 6 Drain current as a function of gate-source voltage; typical values. MBB776 30 handbook, halfpage handbook, halfpage RDS (on) (Ω) C (pF) 4 20 Cis Cos 10 2 0 0 0 50 100 Tj (oC) 0 150 10 ID = 0.3 A; VGS = 15 V VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-resistance as a function of junction temperature; typical values. 2003 Sep 18 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF542 MBB775 6 handbook, halfpage Crs (pF) 4 2 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 °C unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 28 50 5 >13 typ. 16.5 >50 typ. 59 Ruggedness in class-B operation The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. 2003 Sep 18 6 Philips Semiconductors Product specification UHF power MOS transistor BLF542 MRA969 20 handbook, halfpage handbook, halfpage η Gp Gp (dB) MRA970 10 80 PL (W) (%) 8 15 60 η 6 10 40 4 20 5 2 0 0 2 4 6 0 0 10 8 0 0.2 0.4 0.6 Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 Ω; f = 500 MHz. Fig.9 Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 Ω; f = 500 MHz.

,,    Power gain and efficiency as functions of load power; typical values. handbook, full pagewidth Fig.10 Load power as a function of input power; typical values. C9 C3 input 50 Ω C1 L1 L2 C2 L3 DUT L5 L6 C11 L7 L4 C4 L8 R1 C10 C13 output 50 Ω C12 C6 MBB760 C5 R4 L9 C7 R2 R3 C8 VDD = + 28 V f = 500 MHz. Fig.11 Test circuit for class-B operation. 2003 Sep 18 0.8 PIN (W) PL (W) 7 Philips Semiconductors Product specification UHF power MOS transistor BLF542 List of components (see Fig.11) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C13 multilayer ceramic chip capacitor; note 1 390 pF C2, C4, C10, C12 film dielectric trimmer 2 to 18 pF C3, C9 multilayer ceramic chip capacitor; note 1 39 pF C6 multilayer ceramic chip capacitor; note 2 220 pF C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C8 electrolytic capacitor 63 V, 10 µF 2222 030 28109 C11 multilayer ceramic chip capacitor; note 1 10 pF L1 stripline; note 3 50 Ω 11 mm × 2.5 mm L2 stripline; note 3 50 Ω 37 mm × 2.5 mm L3 stripline; note 3 50 Ω 13 mm × 2.5 mm L4, L5 stripline; note 3 42 Ω 3 mm × 3 mm L6 stripline; note 3 50 Ω 39 mm × 2.5 mm L7 stripline; note 3 50 Ω 22 mm × 2.5 mm L8 8 turns 0.8 mm enamelled copper wire 250 nH length 9 mm int. dia. 6 mm leads 2 × 5 mm L9 grade 3B Ferroxcube wideband RF choke R1 metal film resistor 10 kΩ, 0.4 W R2 10 turn potentiometer 50 kΩ R3 metal film resistor 205 kΩ, 0.4 W 2322 151 72054 R4 metal film resistor 10 Ω, 0.4 W 2322 151 71009 222 809 05217 4312 020 36640 2322 151 71003 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. 2003 Sep 18 8 Philips Semiconductors Product specification UHF power MOS transistor BLF542 handbook, full pagewidth VD VG L9 C8 R4 C5 C6 C3 C1 L1 C2 L8 R1 L3 L2 C7 L5 L4 C9 C10 C4 C11 L7 L6 C13 C12 MBB762 150 mm handbook, full pagewidth rivet (12x) strap (8x) 70 mm mounting screws (12x) MBB761 The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. Fig.12 Component layout for 500 MHz test circuit. 2003 Sep 18 9 Philips Semiconductors Product specification UHF power MOS transistor BLF542 MRA732 10 MRA733 70 handbook, Z halfpage handbook, halfpage Zi (Ω) L (Ω) ri 60 0 50 −10 40 xi −20 XL 30 RL −30 20 −40 10 −50 100 200 300 400 0 100 500 200 300 400 f (MHz) f (MHz) 500 Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. MRA971 35 handbook, gain halfpage (dB) 30 25 20 handbook, halfpage 15 10 Zi ZL 5 MBA379 0 100 200 300 400 500 f MHz) Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Fig.16 Power gain as a function of frequency; typical values. Fig.15 Definition of MOS impedance. 2003 Sep 18 10 Philips Semiconductors Product specification UHF power MOS transistor BLF542 BLF542 scattering parameters VDS = 28 V; ID = 10 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 1.00 −3.0 5.88 178.0 0.00 0.0 1.00 −2.3 10 1.00 −6.0 5.88 175.0 0.01 84.7 1.01 −6.0 20 1.00 −12.0 5.86 169.0 0.02 80.4 1.00 −11.0 30 0.99 −17.9 5.74 164.0 0.03 74.8 1.00 −17.2 40 0.98 −23.6 5.65 159.0 0.04 70.2 0.99 −22.4 50 0.98 −29.3 5.55 154.0 0.04 65.6 0.98 −27.3 60 0.97 −34.8 5.43 150.0 0.05 61.2 0.97 −32.1 70 0.96 −40.1 5.31 145.0 0.06 56.9 0.96 −36.8 80 0.94 −45.3 5.19 140.0 0.07 52.4 0.96 −41.8 90 0.93 −50.3 5.03 135.0 0.07 47.9 0.94 −46.9 100 0.92 −54.9 4.86 131.0 0.08 43.6 0.93 −51.6 125 0.89 −65.5 4.42 122.0 0.09 34.7 0.89 −61.6 150 0.87 −75.5 4.06 113.0 0.10 26.8 0.88 −70.0 175 0.85 −84.2 3.71 105.0 0.10 19.0 0.86 −78.2 200 0.83 −91.7 3.35 97.3 0.10 12.4 0.83 −85.3 250 0.82 −105.0 2.81 84.6 0.11 1.2 0.82 −96.8 300 0.81 −116.0 2.34 73.6 0.11 −8.6 0.81 −107.0 350 0.81 −125.0 2.00 64.0 0.10 −16.7 0.82 −115.0 400 0.81 −133.0 1.70 55.5 0.10 −23.8 0.82 −121.0 450 0.82 −140.0 1.48 47.7 0.09 −30.2 0.83 −128.0 500 0.83 −146.0 1.28 40.9 0.09 −35.6 0.84 −133.0 600 0.86 −157.0 1.00 29.0 0.08 −44.9 0.87 −142.0 700 0.87 −166.0 0.79 18.6 0.07 −52.3 0.89 −149.0 800 0.89 −175.0 0.64 9.8 0.06 −58.1 0.90 −155.0 900 0.90 178.0 0.53 2.0 0.05 −62.4 0.92 −160.0 1000 0.91 171.0 0.45 −4.8 0.04 −64.9 0.93 −165.0 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 2003 Sep 18 11 Philips Semiconductors Product specification UHF power MOS transistor BLF542 BLF542 scattering parameters VDS = 28 V; ID = 50 mA.; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 1.00 −4.1 12.20 177.0 0.00 0.0 0.99 −3.2 10 1.00 −8.2 12.20 173.0 0.01 83.5 1.00 −7.8 20 0.99 −16.3 12.10 167.0 0.02 78.1 0.99 −14.5 30 0.98 −24.1 11.70 161.0 0.03 71.7 0.98 −22.3 40 0.97 −31.7 11.40 155.0 0.03 66.2 0.96 −28.8 50 0.95 −39.1 11.10 150.0 0.04 60.9 0.94 −35.1 60 0.93 −46.1 10.70 144.0 0.05 55.8 0.93 −41.1 70 0.92 −52.7 10.30 139.0 0.06 51.1 0.91 −46.8 80 0.90 −59.1 9.92 134.0 0.06 46.2 0.89 −52.7 90 0.88 −65.1 9.47 129.0 0.07 41.6 0.87 −58.4 100 0.86 −70.3 9.00 125.0 0.07 37.3 0.85 −63.6 125 0.82 −81.9 7.95 116.0 0.08 28.7 0.80 −74.1 150 0.80 −92.5 7.12 107.0 0.08 21.2 0.78 −82.8 175 0.77 −101.0 6.37 99.9 0.08 14.2 0.75 −90.7 200 0.75 −109.0 5.68 93.5 0.08 8.5 0.73 −97.4 250 0.74 −121.0 4.67 82.4 0.09 −1.3 0.72 −108.0 300 0.73 −130.0 3.87 72.9 0.08 −9.4 0.71 −116.0 350 0.74 −138.0 3.29 64.5 0.08 −16.3 0.72 −123.0 400 0.75 −145.0 2.81 57.2 0.08 −22.2 0.73 −129.0 450 0.76 −151.0 2.44 50.3 0.07 −27.7 0.74 −134.0 500 0.77 −156.0 2.13 44.2 0.07 −32.2 0.75 −138.0 600 0.79 −165.0 1.67 33.3 0.06 −40.0 0.79 −145.0 700 0.82 −173.0 1.34 23.6 0.05 −46.1 0.82 −152.0 800 0.84 180.0 1.10 15.2 0.04 −50.4 0.85 −157.0 900 0.86 173.0 0.92 7.5 0.04 −52.9 0.87 −162.0 1000 0.87 167.0 0.78 0.7 0.03 −52.8 0.88 −166.0 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 2003 Sep 18 12 Philips Semiconductors Product specification UHF power MOS transistor BLF542 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C M H1 c b 2 4 6 E1 H E U2 1 3 5 w1 M A M B M p A Q w3 M b1 e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 3.18 2.92 2.13 1.88 0.16 0.07 9.25 9.04 9.27 9.02 5.95 5.74 5.97 5.72 3.58 inches F H H1 3.05 11.31 9.27 2.54 10.54 9.01 p 3.43 3.17 Q q U1 U2 4.32 24.90 5.97 18.42 4.11 24.63 5.72 w1 w2 w3 0.25 0.51 0.25 0.268 0.125 0.084 0.006 0.364 0.365 0.234 0.235 0.120 0.445 0.365 0.135 0.170 0.980 0.235 0.725 0.010 0.020 0.010 0.140 0.239 0.115 0.074 0.003 0.356 0.355 0.226 0.225 0.100 0.415 0.355 0.125 0.162 0.970 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT171A 2003 Sep 18 EUROPEAN PROJECTION ISSUE DATE 99-03-29 13 Philips Semiconductors Product specification UHF power MOS transistor BLF542 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 18 14 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp15 Date of release: 2003 Sep 18 Document order number: 9397 750 11588