BLF6G10L-40BRN

BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 23.0 ηD (%) 15.0 ACPR (dBc) −42.5 Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR = −42.5 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (728 MHz to 960 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) Integrated current sense NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi-carrier GSM and LTE applications in the 728 MHz to 960 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 Pinning Description drain gate source sense drain sense gate 2 6 7 3 [1] Simplified outline Graphic symbol BLF6G10L-40BRN (SOT1112A) 4 1 2 3 6, 7 sym126 5 1 4, 5 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name Description BLF6G10L-40BRN flanged ceramic package; 2 mounting holes; 6 leads Version SOT1112A Type number BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 2 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS VGS(sense) ID Tstg Tj Parameter drain-source voltage gate-source voltage sense gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −0.5 −65 Max 65 +11 +9 11 +150 200 Unit V V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 2.5 W (CW) Typ 1.7 Unit K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol V(BR)DSS VGS(th) IDq Parameter drain-source breakdown voltage gate-source threshold voltage quiescent drain current Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 59 mA sense transistor: IDS = 8.2 mA, VDS = 26.5 V; main transistor: VDS = 28 V VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 2.9 A VGS = VGS(th) + 3.75 V; ID = 2.1 A Min 65 1.4 280 Typ 1.9 360 Max 2.4 420 Unit V V mA IDSS IDSX IGSS gfs RDS(on) drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance 8.8 2.7 0.09 10 4.3 0.25 1.4 140 0.39 μA A nA S Ω BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 3 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 DPCH; f1 = 788.5 MHz; f2 = 793.5 MHz; f3 = 818.5 MHz; f4 = 823.5 MHz; RF performance at VDS = 28 V; IDq = 360 mA; Tcase = 25 °C; unless otherwise specified in a class AB production test circuit. Symbol PL(AV) Gp RLin ηD ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 2.5 W PL(AV) = 2.5 W PL(AV) = 2.5 W PL(AV) = 2.5 W Conditions Min 22.2 11 14 Typ 2.5 23.0 15 15 −42.5 Max −41 Unit W dB dB % dBc Table 8. Application information Mode of operation; 1 carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 DPCH; f1 = 821 MHz; RF performance at VDS = 28 V; IDq = 360 mA; Tcase = 25 °C; unless otherwise specified in a class AB production test circuit. Symbol PAR Parameter peak-to-average ratio Conditions PL(AV) = 10 W at 0.01 % probability on CCDF Min 5.5 Typ 5.9 Max Unit dB 7.1 Ruggedness in class-AB operation The BLF6G10L-40BRN is capable of withstanding a load mismatch corresponding to VSWR = 1 : 10 through all phases under the following conditions: VDS = 28 V; IDq = 360 mA; PL = 40 W; f = 791 MHz and 821 MHz. 7.2 Impedance information Table 9. Typical impedance per section IDq = 360 mA; main transistor VDS = 28 V. f (MHz) 800 810 [1] ZS[1] (Ω) 2.0 − j5.0 2.0 − j5.5 ZL[1] (Ω) 5.3 + j2.9 5.6 + j2.3 ZS and ZL are defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 4 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 7.3 Typical power sweep 7.3.1 CW 014aab235 24 Gp (dB) 23 (3) (1) (2) (4) 80 ηD (%) 60 22 40 21 20 20 5 15 25 35 PL (W) 45 0 (1) dB power gain at 791 MHz. (2) dB power gain at 821 MHz. (3) % drain efficiency at 821 MHz. (4) % drain efficiency at 791 MHz. Fig 2. Typical continuous wave: power gain and drain efficiency as a function of output power 19 RLin (dB) 18 (1) 014aab236 17 (2) 16 15 5 15 25 35 PL (W) 45 (1) dB return loss at 821 MHz. (2) dB return loss at 791 MHz. Fig 3. Typical continuous wave: input return loss as a function of output power BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 5 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 7.3.2 2-carrier W-CDMA (5 MHz spacing) 014aab233 (3) (1) (2) (4) 014aab234 25 Gp (dB) 24 10 ηD (%) 9 −10 ACPR1, ACPR2 (dBc) −20 (1) (2) (3) (4) 10 PAR (dB) 9 23 8 −30 8 22 7 −40 (5) 7 21 6 −50 (6) 6 20 0 4 8 12 PL (AV) 16 5 −60 5 0 4 8 12 PL (AV) 16 (1) dB power gain at 791 MHz. (2) dB power gain at 821 MHz. (3) % drain efficiency at 791 MHz. (4) % drain efficiency at 821 MHz. (1) dB PAR at 791 MHz. (2) dB PAR at 821 MHz. (3) 5 MHz ACPR, dBc at 791 MHz. (4) 5 MHz ACPR, dBc at 821 MHz. (5) 10 MHz ACPR, dBc at 791 MHz. (6) 10 MHz ACPR, dBc at 821 MHz. a. Power gain and drain efficiency as a function of average output power b. ACPR, and PAR as a function of average output power 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01% probability per carrier; 5 MHz carrier spacing. Fig 4. Typical 2-carrier W-CDMA: power gain, drain efficiency and ACPR as a function of average output power BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 6 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 8. Test information 8.1 Test circuit The PCB test circuit layout is shown in Figure 5. C1 C7 R2 R3 R1 C3 C9 − + C11 BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP C5 C6 BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP C8 C2 R4 BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP C10 C4 014aab232 When placing components, it is possible to use the vias as a reference. The above layout shows the test circuit used to measure the devices in production. A more appropriate application demonstration for specific customer needs can be obtained from the RF Power and Base station group. Fig 5. Input and output test circuit PCBs BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 7 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 8.2 Bill of materials (BOM) A list of all the components needed to build the RF test circuit is shown in Table 10. Table 10. Bill of materials Description multi-layer ceramic chip capacitor multi-layer ceramic chip capacitor multi-layer ceramic chip capacitor electrolytic capacitor chip resistor chip resistor chip resistor N-connector female N-connector male 2 × contact block 2 × contact block DC-connector 8 pin male 2 × DC-connector 2 pin male flexible copper wire input PCB output PCB 8 × washer M2 14 × bolt M2 4 × bolt M3 2 × bolt M3 2 × washer M3 4 × spring washer M3 10 × isolated paper washer M2 auto bias[1] base plate[2] Type MURATA ATC100B ATC100B ATC100B Philips 1206 Philips 1206 Philips 1206 23N-50-057/1 13N-50-057/1 8140-115 8140-12 SIMX-F 28 V/IDS = 8.2 mA Value 10 μF 47 pF 100 pF 30 pF 470 μF; 63 V 820 Ω 2.2 kΩ 15 Ω 6 × 5 mm 2.5 × 2.5 mm 30 mm 0.75 5 mm 12 mm 30 mm mm2 Code number Remarks Suhner Suhner brass (milled) brass (milled) Souriau (Farnell) Souriau (Farnell) silicon isolated see PCB information see PCB information brass (nickel plated) brass (nickel plated) chrome nickel steel chrome nickel steel chrome nickel steel chrome nickel steel paper - Component C5, C6 C7, C8 C9, C10 C11 R1 R2 R3, R4 [1] [2] C1, C2, C3, C4 multi-layer ceramic chip capacitor solid copper wire (1 mm diameter) - Auto bias documentation available on request from RF Power and Base station group, NXP Semiconductors. Base plate mechanical drawing available on request from RF Power and Base station group, NXP Semiconductors. BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 8 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 6 leads SOT1112A D A F L D1 U1 q 4 1 5 B C c α H U2 Z p E1 E 3 w1 A B A 6 b 2 b1 w2 7 C Q 0 Dimensions Unit(1) mm A b 1.14 0.89 b1 5.26 5.00 c 0.18 0.10 D 9.65 9.40 D1 9.65 9.40 0.38 0.37 E 9.65 9.40 0.38 0.37 E1 9.65 9.40 F 5 scale 10 mm H L p 3.30 2.92 Q(2) 1.70 q 15.24 U1 U2 w1 w2 Z 5.97 α 64° max 4.65 nom min 3.76 1.14 17.12 3.00 0.89 16.10 2.69 20.45 9.91 0.25 0.51 20.19 9.65 0.805 0.39 0.6 0.01 0.02 0.795 0.38 1.45 max 0.183 0.045 0.207 0.007 0.38 inches nom min 0.148 0.035 0.197 0.004 0.37 0.38 0.045 0.674 0.118 0.130 0.067 0.37 0.035 0.634 0.106 0.115 0.057 5.72 62° 0.235 64° 0.225 62° Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1112A References IEC JEDEC JEITA European projection sot1112a_po Issue date 09-10-12 10-02-02 Fig 6. Package outline SOT1112A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BLF6G10L-40BRN Preliminary data sheet Rev. 01 — 9 August 2010 9 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF LDMOS LTE PAR RF VSWR W-CDMA Abbreviations Description Complementary Cumulative Distribution Function Laterally Diffused Metal-Oxide Semiconductor Long Term Evolution Peak-to-Average power Ratio Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 12. Revision history Release date 20100809 Data sheet status Change notice Supersedes Preliminary data sheet Document ID BLF6G10L-40BRN v.1 BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 10 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2010. All rights reserved. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. Preliminary data sheet Rev. 01 — 9 August 2010 11 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G10L-40BRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 August 2010 12 of 13 NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.3.1 7.3.2 8 8.1 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Typical power sweep . . . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA (5 MHz spacing) . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Bill of materials (BOM) . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 August 2010 Document identifier: BLF6G10L-40BRN