BLF6G27-10

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 19 ηD (%) 20 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 1.3 Applications I RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G27-10 (SOT975B) 1 1 2 3 sym112 2 BLF6G27-10G (SOT975C) 1 2 3 drain gate source [1] 1 1 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G27-10 BLF6G27-10G Description earless flanged ceramic package; 2 leads earless flanged ceramic package; 2 leads Version SOT975B SOT975C Type number BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 2 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 3.5 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type Typ 4.0 4.0 Unit K/W K/W thermal resistance from Tcase = 80 °C; BLF6G27-10 junction to case PL = 10 W (CW) BLF6G27-10G 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.18 mA VDS = 10 V; ID = 18 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 0.9 A VGS = VGS(th) + 3.75 V; ID = 0.6 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 2.7 0.8 328 Typ 1.9 3.6 Max 2.4 1.4 140 1256 Unit V V µA A nA S mΩ pF BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 3 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol PL(AV) Gp RLin ηD ACPR885k ACPR1980k [1] Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) Conditions PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W [1] [1] Min 17.5 18 - Typ Max Unit 2 19 20 W dB dB % dBc dBc −10 −49 −46 −64 −61 adjacent channel power ratio (1980 kHz) PL(AV) = 2 W Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 2700 MHz. 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Zone 0 Zone 0 Zone 0 Frame structure Modulation technique QPSK1/2 64QAM3/4 64QAM3/4 Data length 3 bit 692 bit 10000 bit FCH data data 2 symbols × 4 subchannels 2 symbols × 26 subchannels 44 symbols × 30 subchannels Frame contents BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 4 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj351 001aaj352 16 EVM (%) 12 25 Gp (dB) 23 50 ηD (%) 40 21 8 19 Gp 30 20 4 17 ηD 0 10−1 1 PL (W) 10 15 10−1 0 1 PL(AV) (W) 10 10 VDS = 28 V; IDq = 130 mA; f = 2600 MHz. VDS = 28 V; IDq = 130 mA; f = 2600 MHz. Fig 1. EVM as a function of load power; typical values Fig 2. Power gain and drain efficiency as function of average load power; typical values −20 ACPR (dBc) −30 001aaj353 ACPR10M −40 ACPR20M −50 ACPR30M −60 10−1 1 PL(AV) (W) 10 VDS = 28 V; IDq = 130 mA; f = 2600 MHz. Fig 3. Adjacent channel power ratio as a function of average load power; typical values BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 5 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj354 001aaj355 (2) (1) 25 Gp (dB) 23 ηD 21 Gp 19 23 ηD (%) 22 −45 ACPR (dBc) −50 ACPR885k 21 −55 ACPR1500k (1) (2) 20 −60 (2) 17 19 −65 ACPR1980k (1) 15 2500 2540 2580 2620 18 2660 2700 f (MHz) −70 2500 2540 2580 2620 2660 2700 f (MHz) VDS = 28 V; IDq = 130 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at .01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values Fig 5. Adjacent channel power ratio as a function of frequency; typical values 24 Gp (dB) 22 Gp 20 001aaj356 50 ηD (%) 40 −35 ACPR (dBc) −45 (2) (1) 001aaj357 30 −55 ACPR885k 18 20 ACPR1500k −65 16 ηD 10 ACPR1980k −75 10−1 (1) (2) (2) (1) 14 10−1 0 1 PL(AV) (W) 10 1 PL(AV) (W) 10 VDS = 28 V; IDq = 130 mA; f = 2600 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. VDS = 28 V; IDq = 130 mA; f = 2600 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values Fig 7. Adjacent channel power ratio as a function of load power; typical values © NXP B.V. 2009. All rights reserved. BLF6G27-10_BLF6G27-10G_1 Product data sheet Rev. 01 — 4 February 2009 6 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 25 Gp (dB) 23 (2) (1) (3) 001aaj358 0.16 Pi (W) 0.12 (3) (2) (1) 001aaj359 21 0.08 19 0.04 17 15 10−1 1 PL (W) 10 0 10−1 1 PL (W) 10 VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz Fig 8. Power gain as a function of load power; typical values Fig 9. Input power as a function of load power; typical values BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 7 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 8. Test information L1 C8 R2 C5 C2 C3 R1 C7 C4 C6 C1 BLF6G27-10 Input Rev 2 NXP BLF6G27-10 Output Rev 2 NXP PCB1 PCB2 001aaj360 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.30 mm. See Table 9 for list of components. Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10 BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 8 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor L1 C8 R2 C2 C3 R1 C1 C4 C7 C5 C6 BLF6G27-10G Input Rev 1 NXP BLF6G27-10G Output Rev 1 NXP PCB1 PCB2 001aaj361 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G Table 9. List of components For test circuit, see Figure 10 and Figure 11. Component C1, C3, C5, C7 C2 C4 C6 C8 L1 R1, R2 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead SMD resistor Value 22 pF 1.5 µF 1.6 pF 10 µF; 50 V 220 µF; 63 V 8.2 Ω Remarks ATC 100A TDK ATC 100A TDK Elco Ferroxcube bead Thin film BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 9 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Measured test circuit impedances Zi (Ω) 5.32 - j8.61 4.85 - j8.09 4.40 - j7.55 3.98 - j7.00 3.59 - j6.43 5.67 - j13.62 5.06 - j12.79 4.55 - j11.98 4.10 - j11.19 3.71 - j10.43 Zo (Ω) 9.46 - j6.99 9.44 - j7.41 9.32 - j7.86 9.10 - j8.31 8.77 - j8.75 10.70 - j7.38 10.61 - j8.00 10.38 - j8.63 10.00 - j9.24 9.49 - j9.79 Table 10. f (GHz) BLF6G27-10 3.40 3.45 3.50 3.55 3.60 BLF6G27-10G 3.40 3.45 3.50 3.55 3.60 BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 10 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975B D A F U1 D1 A c 1 H E1 U2 E 2 b w1 M A M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 3.63 3.05 b 3.38 3.23 c 0.23 0.18 D 6.55 6.40 D1 6.93 6.78 E 6.55 6.40 E1 6.93 6.78 F 0.23 0.18 H 11.05 10.80 Q 0.76 0.66 U1 6.43 6.27 U2 6.43 6.27 w1 0.51 0.02 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.030 0.253 0.253 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.425 0.026 0.247 0.247 REFERENCES IEC JEDEC JEITA OUTLINE VERSION SOT975B EUROPEAN PROJECTION ISSUE DATE 06-11-03 07-09-28 Fig 12. Package outline SOT975B BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 11 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Earless flanged ceramic package; 2 leads SOT975C D A F U1 D1 A c 1 L Lp H E1 U2 E 2 b w1 M A M α Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 3.63 3.05 b 3.38 3.23 c 0.23 0.18 D 6.55 6.40 D1 6.93 6.78 E 6.55 6.40 E1 6.93 6.78 F 0.23 0.18 H 10.29 10.03 L 1.65 Lp 1.02 0.51 Q +0.05 −0.05 U1 6.43 6.27 U2 6.43 6.27 w1 0.51 α 7° 0° 7° 0° 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.040 +0.002 0.253 0.253 0.065 0.020 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.020 −0.002 0.247 0.247 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT975C ISSUE DATE 08-05-20 08-07-10 Fig 13. Package outline SOT975C BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 12 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CW EVM FCH FFT IBW IS-95 LDMOS NA N-CDMA PAR PUSC RF SMD VSWR WCS WiMAX Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Error Vector Magnitude Frame control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor North American Narrowband Code Division Multiple Access Peak-to-Average power Ratio Partial Usage of SubChannels Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wireless Communications Service Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Release date 20090204 Data sheet status Product data sheet Change notice Supersedes Document ID BLF6G27-10_BLF6G27-10G_1 BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 13 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G27-10_BLF6G27-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 February 2009 14 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation. . . . . . . . . . 4 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Single carrier NA IS-95 broadband performance at 2 W average . . . . . . . . . . . . . . 6 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 February 2009 Document identifier: BLF6G27-10_BLF6G27-10G_1