BLF6G27-135

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 ηD ACPR885k ACPR1980k (dBc) (dBc) −67[2] (dB) (%) 22.5 −52[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 20 W N Power gain = 16 dB N Drain efficiency = 22.5 % N ACPR885k = −52.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G27-135 (SOT502A) 1 1 3 2 2 3 sym112 BLF6G27LS-135 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G27-135 BLF6G27LS-135 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 34 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 135 W (CW) Type BLF6G27-135 BLF6G27LS-135 Typ 0.5 0.45 Unit K/W K/W 2 of 13 BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 216 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 6.3 A VGS = VGS(th) + 3.75 V; ID = 7.2 A VGS =0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 30.6 Typ 2 34 12 0.085 3.15 Max 2.4 4.2 420 Unit V V µA A nA S 0.135 Ω pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 32 V; IDq = 1200 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Gp RLin ηD ACPR885k ACPR1980k PL(M) [1] [2] Parameter power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) adjacent channel power ratio (1980 kHz) peak output power Conditions PL(AV) = 20 W PL(AV) = 20 W PL(AV) = 20 W PL(AV) = 20 W PL(AV) = 20 W [1] Min 14 19.0 −48 −65 185 Typ 16 −10 22.5 −52 −67 200 Max - Unit dB dB % dBc dBc W [1] [2] Measured within 30 kHz bandwidth. Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. 7.1 Ruggedness in class-AB operation The BLF6G27-135 and BLF6G27LS-135 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1200 mA; PL = PL(1dB); f = 2700 MHz. BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 3 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 28 / 25; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Zone 0 Zone 0 Zone 0 Frame structure Modulation technique QPSK1/2 64QAM3/4 64QAM3/4 Data length 3 bit 692 bit 10000 bit FCH data data 2 symbols × 4 subchannels 2 symbols × 26 subchannels 44 symbols × 30 subchannels Frame contents 7.2.2 Graphs 001aah641 001aah642 2.5 EVM (%) 2.0 20 Gp (dB) 18 25 ηD (%) 20 1.5 16 Gp 15 1.0 14 ηD 10 0.5 12 5 0 0 4 8 12 16 20 28 PL(AV) (W) 24 10 0 4 8 12 16 20 28 PL(AV) (W) 24 0 VDS = 32 V; IDq = 1200 mA; f = 2600 MHz. VDS = 32 V; IDq = 1200 mA; f = 2600 MHz. Fig 1. EVM as function of average load power; typical values Fig 2. Power gain and drain efficiency as functions of average load power; typical values BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 4 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor −20 ACPR (dBc) −30 001aah643 −40 (1) −50 (2) (3) −60 −70 0 4 8 12 16 20 24 28 PL(AV) (W) VDS = 32 V; IDq = 1200 mA. (1) (2) (3) f = 2600 MHz ± 10 MHz f = 2600 MHz ± 20 MHz f = 2600 MHz ± 30 MHz Fig 3. Adjacent channel power ratio as function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 001aah644 001aah645 (1) (2) 19 Gp (dB) 18 25 ηD (%) 24 −45 ACPR (dBc) −50 ACPR885k 17 Gp 16 ηD 15 23 −55 (2) (1) 22 −60 ACPR1500k 21 −65 (2) (1) ACPR1980k 14 20 −70 13 2500 2550 2600 2650 f (MHz) 19 2700 −75 2500 2550 2600 2650 f (MHz) 2700 VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values Fig 5. Adjacent channel power ratio as function of frequency; typical values BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 5 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 19 Gp (dB) 18 001aah646 42 ηD (%) 35 −35 ACPR (dBc) −45 001aah647 17 Gp 16 28 −55 21 −65 ACPR885k (1) (2) 15 14 −75 ACPR1500k (2) (1) (1) (2) 14 ηD 7 13 1 10 PL (W) 0 102 −85 1 ACPR1980k 10 PL (W) 102 VDS = 32 V; IDq = 1200 mA; f = 2600 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; f = 2600 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values Fig 7. Adjacent channel power ratio as function of load power; typical values 17 Gp (dB) 16 001aah648 3 Pi (W) 2 001aah649 (1) (2) (3) (3) (2) (1) 15 1 14 1 10 PL (W) 102 0 1 10 PL (W) 102 VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz Fig 8. Power gain as function of load power; typical values Fig 9. Input power as function of load power; typical values BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 6 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 8. Test information R2 VGG R1 C3 C4 C5 C6 C7 L1 VDD + C8 − C9 C2 C1 C10 BLF6G27-135 input-rev 1A 30RF35 NXP BLF6G27-135 output-rev 1A 30RF35 NXP 001aah650 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component C2 C5 C9 C6, C7 C8 L1 R1 R2 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead SMD resistor SMD resistor Value 8.2 pF 4.7 µF; 50 V 10 µF; 50 V 1.5 µF; 50 V 100 nF 470 µF; 63 V 5.1 Ω 9.1 Ω Remarks ATC 100B or equivalent TDK C4532X7R1H475M or equivalent TDK C5750X7R1H106M or equivalent TDK C3225X7R1H155M or equivalent Vishay VJ1206Y104KXB or equivalent ATC 100B or equivalent Ferroxcube BDS 3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 C1, C3, C4, C10 multilayer ceramic chip capacitor BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 7 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Measured test circuit impedances Zi (Ω) 1.60 + j1.07 1.38 + j2.08 1.17 + j2.77 Zo (Ω) 1.44 + j1.86 1.17 + j2.80 0.97 + j3.41 Table 10. f (GHz) 2.5 2.6 2.7 BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 8 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 11. Package outline SOT502A BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 9 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 12. Package outline SOT502B BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 10 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CDMA CW EVM FCH FFT IBW IS-95 LDMOS LDMOST N-CDMA PAR PUSC RF SMD VSWR WCS WiMAX Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth CDMA Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Narrowband Code Division Multiple Access Peak-to-Average power Ratio Partial Usage of SubChannels Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wireless Communications Service Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Release date Data sheet status Product data sheet Change notice Supersedes BLF6G27-135_ BLF6G27LS-135_1 Document ID BLF6G27-135_BLF6G27LS-135_2 20080526 BLF6G27-135_BLF6G27LS-135_1 20080221 Preliminary data sheet - BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 11 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 26 May 2008 12 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 May 2008 Document identifier: BLF6G27-135_BLF6G27LS-135_2