BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 2 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA[2]
f
VDS PL(AV) PL(M) [1] Gp
(MHz)
(V)
3400 to 3600 28
D
(W)
(W)
(dB) (%)
18.5
130
13
ACPR885k ACPR1980k
(dBc)
21.5 47.5[3]
(dBc)
65[3]
[1]
PL(M) stands for peak output power.
[2]
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
[3]
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA:
Qualified up to a maximum VDS operation of 32 V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to
3600 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF6G38-100 (SOT502A)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
BLF6G38LS-100 (SOT502B)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF6G38-100
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF6G38LS-100
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF6G38-100_6G38LS-100_1
Product data sheet
Symbol
Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
34
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
Min
Max
Unit
-
65
V
© NXP B.V. 2011. All rights reserved.
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BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-case)
thermal resistance from junction to case
Tcase = 80 C; PL(AV) = 18.5 W BLF6G38-100
Type
BLF6G38LS-100
Typ
Unit
0.58
K/W
0.43
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C per section; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS = 0 V; ID = 0.6 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.4
2
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
26.5
33
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 6.3 A
-
12
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V; ID = 6.3 A
-
0.09
0.15
Crs
feedback capacitance
VGS =0 V; VDS = 28 V; f = 1 MHz
-
2.6
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes
8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz;
f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 1050 mA; Tcase = 25 C; unless otherwise specified, in a class-AB
production circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL(M)
peak output power
PL(AV) = 18.5 W
110
130
-
W
Gp
power gain
PL(AV) = 18.5 W
11.5
13
-
dB
RLin
input return loss
PL(AV) = 18.5 W
-
10
-
dB
D
drain efficiency
PL(AV) = 18.5 W
18.5
21.5
-
%
ACPR885k
adjacent channel power ratio (885 kHz)
PL(AV) = 18.5 W
[1]
-
47.5
45
dBc
PL(AV) = 18.5 W
[1]
-
65
63
dBc
ACPR1980k
adjacent channel power ratio (1980 kHz)
[1]
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1050 mA; PL = PL(1dB); f = 3600 MHz.
BLF6G38-100_6G38LS-100_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol 30 subchannels; PL = PL(nom) + 3.86 dB.
Table 8.
Frame structure
Frame contents
Modulation technique
Data length
Zone 0
FCH
2 symbols 4 subchannels
QPSK 1/2
3 bit
Zone 0
data
2 symbols 26 subchannels
64 QAM 3/4
692 bit
Zone 0
data
44 symbols 30 subchannels
64 QAM 3/4
10000 bit
7.2.2 Graphs
001aaj033
10
EVM
(%)
001aaj034
18
40
ηD
(%)
GP
(dB)
8
16
30
14
20
6
4
GP
10
12
2
ηD
0
10−1
1
10
10−1
102
10
PL (W)
EVM as a function of load power;
typical values
BLF6G38-100_6G38LS-100_1
Product data sheet
0
102
10
PL(AV) (W)
VDS = 28 V; IDq = 1050 mA; f = 3500 MHz.
Fig 1.
1
VDS = 28 V; IDq = 1050 mA; f = 3500 MHz.
Fig 2.
Power gain and drain efficiency as function of
average load power; typical values
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Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
001aaj036
−25
ACPR10M
ACPR
(dBc)
−35
−45
ACPR20M
−55
ACPR30M
−65
10−1
1
102
10
PL(AV) (W)
VDS = 28 V; IDq = 1050 mA; f = 3500 MHz.
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier NA IS-95 broadband performance at 2 W average
7.3.1 Graphs
001aaj037
16
25
ηD
(%)
GP
(dB)
24
14
GP
001aaj039
−40
ACPR
(dBc)
−50
12
23
10
22
21
8
3450
3500
(1)
(2)
ACPR1500k
(1)
(2)
ACPR1980k
(2)
(1)
−60
ηD
6
3400
ACPR885k
20
3600
3550
−70
3400
3440
3480
3520
f (MHz)
VDS = 28 V; IDq = 1050 mA; Single Carrier IS-95;
PAR = 9.7 dB at 0.01 % probability.
3560
3600
f (MHz)
VDS = 28 V; IDq = 1050 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as function of
frequency; typical values
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 5.
Adjacent channel power ratio as a function of
frequency; typical values
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Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
001aaj041
18
40
ηD
(%)
GP
(dB)
16
001aaj042
−35
ACPR
(dBc)
−45
30
ηD
−55
(1)
(2)
20
14
ACPR885k
−65
(2)
(1)
GP
10
12
−75
ACPR1500k
(1)
(2)
ACPR1980k
10
0
102
10
1
−85
10−1
1
102
10
PL(AV) (W)
PL(AV) (W)
VDS = 28 V; IDq = 1050 mA; f = 3500 MHz;
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
VDS = 28 V; IDq = 1050 mA; f = 3500 MHz;
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6.
Power gain and drain efficiency as function of
load power; typical values
Fig 7.
001aaj043
15
GP
(dB)
001aaj045
3
Pi
(W)
(1)
(2)
(3)
13
Adjacent channel power ratio as a function of
load power; typical values
2
(1)
(2)
(3)
11
1
9
7
10−1
1
0
10−1
102
10
PL (W)
VDS = 28 V; IDq = 1050 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
(1) f = 3400 MHz
(1) f = 3400 MHz
(2) f = 3500 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
(3) f = 3600 MHz
Power gain as a function of load power;
typical values
BLF6G38-100_6G38LS-100_1
Product data sheet
102
10
PL (W)
VDS = 28 V; IDq = 1050 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Fig 8.
1
Fig 9.
Input power as a function of load power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
8. Test information
C9
C6
C10
R3
L1
C8
C4
R1
C5
C7
C3
R2
C1
C11
C2
BLF6G38-100
BLF6G38-100
Input Rev 2
30RF35
NXP
Output Rev 2
30RF35
NXP
PCB1
PCB2
001aaj048
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
Table 9.
List of components
For test circuit, see Figure 10.
Component
Description
Value
Remarks
C1, C4, C5, C11
multilayer ceramic chip capacitor
10 pF
ATC 100A
C2
multilayer ceramic chip capacitor
0.2 pF
ATC 100A
C3
multilayer ceramic chip capacitor
4.7 F; 50 V
TDK C4532X7R1H475M
C6, C7
multilayer ceramic chip capacitor
100 nF
Vishay VJ1206Y104KXB
C8
multilayer ceramic chip capacitor
10 F; 50 V
TDK C5750X7R1H106M
C9
multilayer ceramic chip capacitor
1.5 F; 50 V
TDK C3225X7R1H155M
C10
electrolytic capacitor
470 F; 63 V
L1
ferrite SMD bead
-
R1, R2, R3
SMD resistor
9.1
Table 10.
f
BLF6G38-100_6G38LS-100_1
Product data sheet
SMD 1206
Measured test circuit impedances
Zi
Zo
(GHz)
()
()
3.4
0.34 + j3.36
0.44 + j3.39
3.5
0.52 + j3.86
0.56 + j3.91
3.6
1.36 + j4.85
1.38 + j5.11
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
BLF6G38-100_6G38LS-100_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
8 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 12. Package outline SOT502B
BLF6G38-100_6G38LS-100_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
9 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
EVM
Error Vector Magnitude
FCH
Frame Control Header
FFT
Fast Fourier Transform
IBW
Instantaneous BandWidth
IS-95
Interim Standard 95
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
NA
North American
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
PUSC
Partial Usage SubChannels
RF
Radio Frequency
QAM
Quadrature Amplitude Modulation
QPSK
Quadrature Phase Shift Keying
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
WCS
Wireless Communications Service
WiMAX
Worldwide Interoperability for Microwave Access
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G38-100_6G38LS-100 v.2
20111024
Product data sheet
-
BLF6G38-100_6G38LS-100_1
Modifications:
BLF6G38-100_6G38LS-100_1
BLF6G38-100_6G38LS-100_1
Product data sheet
•
•
Table 1 on page 1: PL(p) has been changed to PL(M).
Table 7 on page 3: PL(AV) has been changed to PL(M).
20081111
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
-
© NXP B.V. 2011. All rights reserved.
10 of 13
BLF6G38-100; BLF6G38LS-100
NXP Semiconductors
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BLF6G38-100_6G38LS-100_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
11 of 13
NXP Semiconductors
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G38-100_6G38LS-100_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
12 of 13
NXP Semiconductors
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.2.1
7.2.2
7.3
7.3.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4
WiMAX signal description . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Single carrier NA IS-95 broadband
performance at 2 W average . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 October 2011
Document identifier: BLF6G38-100_6G38LS-100_1