BLF6G38S-25

BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 ηD (%) 24 ACPR885k ACPR1980k (dBc) −45[2] (dBc) −61[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth. 1.2 Features I Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA: N Average output power = 4.5 W N Power gain = 15 dB N Drain efficiency = 24 % N ACPR885k = −45 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3400 MHz to 3800 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G38-25 (SOT608A) 1 1 3 2 2 3 sym112 BLF6G38S-25 (SOT608B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G38-25 BLF6G38S-25 Description flanged ceramic package; 2 mounting holes; 2 leads ceramic earless flanged package; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 8.2 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 25 W Type BLF6G38-25 BLF6G38S-25 Typ 1.8 1.8 Max Unit K/W K/W BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 2 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.4 mA VDS = 10 V; ID = 40 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 1.4 A VGS = VGS(th) + 3.75 V; ID = 1.4 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 6 Typ 2 8.2 2.8 0.37 0.59 Max 2.4 1.5 150 0.58 Unit V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth is 1.2288 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 225 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Gp RLin ηD ACPR885k Parameter power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) Conditions PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W [1] [1] Min Typ Max Unit 12.5 15 22 24 dB dB % dBc dBc −10 −45 −40 −61 −56 ACPR1980k adjacent channel power ratio (1980 kHz) [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 225 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 3 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB Table 8. Zone 0 Zone 0 Zone 0 Frame structure Modulation technique QPSK1/2 64QAM3/4 64QAM3/4 Data length 3 692 10000 FCH data data 2 symbols × 4 subchannels 2 symbols × 26 subchannels 44 symbols × 30 subchannels Frame contents 7.2.2 Graphs 001aah594 001aah595 30 EVM (%) 24 18 Gp (dB) 16 Gp 48 ηD (%) 36 18 14 12 24 6 (1) (2) (3) 12 ηD 10 10−1 12 0 10−1 1 10 PL (W) 102 1 10 PL(AV) (W) 0 102 VDS = 28 V; IDq = 225 mA; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. (1) (2) (3) f = 3400 MHz f = 3500 MHz f = 3600 MHz VDS = 28 V; IDq = 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. Fig 1. EVM as function of load power; typical values Fig 2. Power gain and drain efficiency as functions of average load power; typical values BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 4 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor −17 ACPR (dBc) −29 001aah596 ACPR10M −41 (2) (1) ACPR20M −53 (1) (2) ACPR30M (2) (1) −65 10−1 1 10 PL(AV) (W) 102 VDS = 28 V; IDq = 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. (1) Low frequency component (2) High frequency component Fig 3. Adjacent channel power ratio as function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 17 Gp (dB) 16 Gp 15 ηD 25 001aah597 27 ηD (%) 26 −40 ACPR (dBc) −50 (1) (2) 001aah598 ACPR885k (1) (2) ACPR1500k 14 24 −60 (2) (1) ACPR1980k 13 23 12 3400 3450 3500 3550 f (MHz) 22 3600 −70 3400 3450 3500 3550 f (MHz) 3600 PL(AV) = 4.5 W. VDS = 28 V; IDq = 350 mA; PL(AV) = 4.5 W; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values Fig 5. Adjacent channel power ratio as function of frequency; typical values BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 5 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 18 Gp (dB) 16 Gp 001aah599 48 ηD (%) 36 −30 ACPR (dBc) −40 001aah600 ACPR885k ACPR1500k −50 (2) (1) (1) (2) ACPR1980k 14 24 −60 (2) (1) 12 ηD 10 10−1 12 −70 1 10 PL (W) 0 102 −80 10−1 1 10 PL (W) 102 VDS = 28 V; IDq = 225 mA; f = 3500 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 28 V; IDq = 225 mA; f = 3500 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values 18 001aah601 Fig 7. Adjacent channel power ratio as function of average load power; typical values 0.8 001aah602 (3) (2) (1) Gp (dB) 16 (2) (1) (3) Pi (W) 0.6 14 0.4 12 0.2 10 10−1 1 10 PL (W) 102 0 10−1 1 10 PL (W) 102 VDS = 28 V; IDq = 225 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz VDS = 28 V; IDq = 225 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz Fig 8. Power gain as function of load power; typical values Fig 9. Input power as function of load power; typical values BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 6 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 8. Test information C16 C17 VGG C14 C12 R1 R3 L1 C8 C6 C18 C19 C20 VDD C10 C4 C2 C1 C3 C21 C5 C11 C9 C7 R2 C13 C15 BLF6G38-25 OUTPUT REV1 3.4 - 3.6 GHz NXP 001aah603 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. C1 C2, C3 C10, C11 C12, C13 C14, C15 C16, C17 C19 C20 C21 List of components (see Figure 10) Description Value Remarks ATC 100A or equivalent ATC 100A or equivalent ATC 100A or equivalent ATC 100A or equivalent TDK C4532X7R1H475M or equivalent ATC 700A or equivalent Vishay VJ1206Y104KXB or equivalent TDK C5750X7R1H106M or equivalent ATC 100B or equivalent multilayer ceramic chip capacitor 22 pF multilayer ceramic chip capacitor 3 pF multilayer ceramic chip capacitor 24 pF multilayer ceramic chip capacitor 4.7 µF; 50 V multilayer ceramic chip capacitor 1 nF multilayer ceramic chip capacitor 100 nF multilayer ceramic chip capacitor 10 µF; 50 V electrolytic capacitor 470 µF; 63 V multilayer ceramic chip capacitor 10 pF Component C4, C5, C6, C7, C8, C9, C18 multilayer ceramic chip capacitor 10 pF BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 7 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) …continued Description ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 Ω 9.1 Ω Remarks Ferroxcube BDS3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 Component Measured test circuit impedances ZS Ω 14.65 + j29.87 14.16 + j28.69 14.56 + j30.52 17.49 + j30.11 15.50 + j29.36 ZL Ω 13.46 + j3.58 13.56 + j4.12 13.76 + j4.74 13.97 + j5.41 14.16 + j5.95 drain ZL gate ZS 001aag189 Fig 11. Definition of transistor impedance BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 8 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 q C B c 1 H U2 p E1 E w1 M A M B M A b 2 w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 0.285 0.006 0.275 0.004 0.045 0.620 0.035 0.580 0.067 0.600 0.053 0.390 0.010 0.020 0.380 OUTLINE VERSION SOT608A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 Fig 12. Package outline SOT608A BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 9 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 D1 U1 A c 1 H U2 E1 E 2 b w1 M A M Q 0 scale 5 mm DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT mm inch A 4.62 3.76 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 Q 1.70 1.35 U1 U2 w1 0.51 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 10.24 10.24 9.98 9.98 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT608B ISSUE DATE 06-11-27 06-12-06 Fig 13. Package outline SOT608B BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 10 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CW ESD EVM FCH FFT IBW IS-95 LDMOS N-CDMA OFDMA PAR PUSC RF QAM QPSK SMD VSWR WCS WiMAX Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave ElectroStatic Discharge Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Narrowband Code Division Multiple Access Orthogonal Frequency Division Multiple Access Peak-to-Average power Ratio Partial Usage of SubChannels Radio Frequency Quadrature Amplitude Modulation Quadrature Phase Shift Keying Surface Mounted Device Voltage Standing-Wave Ratio Wireless Communications Service Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Release date Data sheet status 20081223 Product data sheet Change notice Supersedes BLF6G38-25_BLF6G38S-25_1 Document ID BLF6G38-25_BLF6G38S-25_2 Modifications: • • Changed the maximum drain current and the maximum junction temperature in Table 4 on page 2 Moved impedance information to Section 8 Preliminary data sheet - BLF6G38-25_BLF6G38S-25_1 20080218 BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 11 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 12 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 December 2008 Document identifier: BLF6G38-25_BLF6G38S-25_2