BLF7G22L-250P;
BLF7G22LS-250P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
(MHz)
(mA)
(V)
(W)
2-carrier W-CDMA
2110 to 2170
1900
28
70
[1]
IDq
VDS
PL(AV)
D
ACPR
(dB)
(%)
(dBc)
18.5
31
30[1]
Gp
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing
5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF7G22L-250P (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
1
5
3
3
4
5
4
[1]
source
2
sym117
BLF7G22LS-250P (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
1
2
5
3
3
5
4
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G22L-250P
-
Flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF7G22LS-250P
-
Earless flanged LDMOST ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF7G22L-250P_22LS-250P
Product data sheet
Symbol
Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
65
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
Min
Max
Unit
-
65
V
© NXP B.V. 2013. All rights reserved.
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NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Conditions
thermal resistance from junction to case Tcase = 80 C; PL = 70 W;
VDS = 28 V; IDq = 1900 mA
Typ
Unit
0.20
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.8 mA
Min
Typ
Max
Unit
65
-
-
V
2.3
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.5
1.9
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
28
34.2
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
-
13.7
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 6.3 A
-
0.081 -
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 1900 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL(AV)
average output power
Gp
power gain
PL(AV) = 70 W
-
70
-
W
17
18.5
-
dB
RLin
input return loss
PL(AV) = 70 W
-
15
5
dB
D
drain efficiency
PL(AV) = 70 W
27
31
-
%
ACPR
adjacent channel power ratio
PL(AV) = 70 W
-
30
25
dBc
7.1 Ruggedness in class-AB operation
The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 30 V; IDq = 1900 mA; PL = 250 W (CW); f = 2110 MHz to 2170 MHz.
BLF7G22L-250P_22LS-250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
3 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half device; IDq = 1900 mA; VDS = 28 V.
f
ZS[1]
ZL[1]
(MHz)
()
()
2050
1.50 j5.20
3.03 j2.92
2110
2.08 j5.64
2.76 j2.70
2140
2.16 j5.89
2.31 j2.74
2170
2.43 j5.97
2.31 j2.74
2230
3.94 j7.60
2.10 j2.96
[1]
ZS and ZL defined in Figure 1.
drain
ZL
gate
ZS
001aaf059
Fig 1.
BLF7G22L-250P_22LS-250P
Product data sheet
Definition of transistor impedance
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
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4 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
7.3 1 Tone CW
aaa-001318
19.0
Gp
(3)
(dB)
18.5
aaa-001319
60
ηD
(%)
(2)
(3)
(2)
(1)
50
(1)
18.0
40
17.5
30
17.0
20
16.5
16.0
10
0
50
100
150
200
250
300
350
PL(AV) (W)
0
VDS = 28 V; IDq = 1900 mA.
50
100
(1) f = 2110 MHz
(2) f = 2140 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Product data sheet
250
300
350
PL(AV) (W)
(3) f = 2170 MHz
Power gain as a function of average load
power; typical values
BLF7G22L-250P_22LS-250P
200
VDS = 28 V; IDq = 1900 mA.
(1) f = 2110 MHz
Fig 2.
150
Fig 3.
Drain efficiency as a function of average load
power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
7.4 1-carrier W-CDMA
aaa-001320
19
Gp
(dB)
50
Gp
aaa-001321
8
ηD
(%)
PAR
(dB)
40
18
7
(3)
(2)
30
17
(1)
6
20
16
ηD
5
10
15
14
0
40
80
0
120
160
PL(AV) (W)
4
0
40
80
160
120
PL(M) (W)
VDS = 28 V; IDq = 1900 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
VDS = 28 V; IDq = 1900 mA; f = 2140 MHz; PAR = 7.2 dB
at 0.01 probability on the CCDF.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 4.
Power gain and drain efficiency as functions
of average load power; typical values
Fig 5.
Peak-to-average power ratio as function of
peak power; typical values
aaa-001322
-25
(3)
APCR5M
(dBc)
(2)
(1)
-35
-45
-55
0
40
80
160
120
PL(AV) (W)
VDS = 28 V; IDq = 1900 mA; PAR = 7.2 dB at 0.01 probability on the CCDF.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 6.
Adjacent power channel ratio (5 MHZ) as function of average load power; typical values
BLF7G22L-250P_22LS-250P
Product data sheet
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Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
6 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
7.5 2-carrier W-CDMA
aaa-001323
19.0
Gp
(dB)
50
ηD
(%)
Gp
18.6
40
aaa-001324
19.0
Gp
(dB)
(3)
18.6
(2)
(1)
18.2
17.8
30
18.2
20
17.8
10
17.4
ηD
17.4
17.0
0
40
80
0
120
160
PL(AV) (W)
VDS = 28 V; IDq = 1900 mA; f = 2140 MHz; Channel
Spacing = 5 MHz; PAR = 8.4 dB at 0.01 probability on
the CCDF.
17.0
0
40
80
120
160
PL(AV) (W)
VDS = 28 V; IDq = 1900 mA; Channel Spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 7.
Power gain and drain efficiency as functions
of average load power; typical values
aaa-001325
50
ηD
(%)
Fig 8.
Power gain as a function of average load
power; typical values
aaa-001326
-20
ACPR5M
(dBc)
40
(1)
-30
(2)
30
(3)
20
-40
(1)
(2)
10
(3)
0
-50
0
40
80
120
160
PL(AV) (W)
0
VDS = 28 V; IDq = 1900 mA; Channel Spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
40
(1) f = 2110 MHz
(2) f = 2140 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(3) f = 2170 MHz
Drain efficiency as function of average load
power; typical values
BLF7G22L-250P_22LS-250P
Product data sheet
160
120
PL(AV) (W)
VDS = 28 V; IDq = 1900 mA; Channel Spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
(1) f = 2110 MHz
Fig 9.
80
Fig 10. Adjacent power channel ratio (5 MHZ) as
function of average load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
7 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
7.6 Test circuit
C8 C9
C10
C11
C4
C12
R1
R2
C1
C5
R3
C2
R4
C7
C6
aaa-001327
See Table 9 for list of components.
Fig 11. Component layout
Table 9.
List of components
See Figure 11 for component layout.
Component
Product data sheet
Value
Remarks
C2
multilayer ceramic chip capacitor
8.2 pF
[1]
C1, C3, C4, C5, C6
multilayer ceramic chip capacitor
8.2 pF
[2]
ATC100B
C7, C8
multilayer ceramic chip capacitor
470 nF
[3]
TDK
multilayer ceramic chip capacitor
4.7 F
[3]
TDK
C10
multilayer ceramic chip capacitor
10 F
[3]
TDK
C11
electrolytic capacitor
470 F
R1
chip resistor
4.7
Philips 0603
R2, R4
chip resistor
10
Philips 0603
R3
chip resistor
33
Philips 0603
C9, C12
BLF7G22L-250P_22LS-250P
Description
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
[3]
TDK or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
ATC100A
© NXP B.V. 2013. All rights reserved.
8 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
0.185 0.465 0.007 1.242 1.241
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
0.165 0.455 0.004 1.218 1.219
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 12. Package outline SOT539A
BLF7G22L-250P_22LS-250P
Product data sheet
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Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
9 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
e
4.2
11.56
0.10 30.94 30.96
9.3
9.27
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 13. Package outline SOT539B
BLF7G22L-250P_22LS-250P
Product data sheet
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Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
10 of 14
BLF7G22L-250P; BLF7G22LS-250P
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 11.
Revision history
Document ID
Release
date
BLF7G22L-250P_22LS-250P v.3 20130712
Modifications:
•
•
Product data sheet
Product data sheet
-
BLF7G22L-250P_22LS-250P v.2
Translation disclaimer added to the legal text.
Product data sheet
-
BLF7G22L-250P_22LS-250P v.1
•
•
The status of this document has been changed to Product data sheet
•
Table 7 on page 3: the term PDPCH has been changed to DPCH; several values
have been changed
•
•
•
Section 7.2 on page 4: section has been added
Table 1 on page 1: the term PDPCH has been changed to DPCH; several values
have been changed
Section 7.6 on page 8: section has been added
Section 9 on page 11: section has been added
BLF7G22L-250P_22LS-250P v.1 20100506
BLF7G22L-250P_22LS-250P
Change notice Supersedes
The package outline Figure 13 is updated.
BLF7G22L-250P_22LS-250P v.2 20111028
Modifications:
Data sheet status
Objective data sheet -
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
-
© NXP B.V. 2013. All rights reserved.
11 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF7G22L-250P_22LS-250P
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
12 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF7G22L-250P_22LS-250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
13 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 July 2013
Document identifier: BLF7G22L-250P_22LS-250P
