BLF7G27L-150P,112

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IS-95 Single carrier W-CDMA 2500 to 2700 D IDq VDS PL(AV) Gp ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2500 to 2700 1200 28 30 16.5 26 47[1] - 1200 28 45 16.5 31 - 38[2] (dBc) [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits          Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G27L-150P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF7G27LS-150P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G27L-150P - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A BLF7G27LS-150P - earless flanged balanced LDMOST ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 37 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 2 of 14 NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 30 W 0.25 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.3 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 16.75 19 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 500 nA gfs forward transconductance VDS = 10 V; ID = 3.57 A - 0.86 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.5 A - 0.14 -  7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 1200 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - - W Gp power gain 14.8 16.5 - dB RLin input return loss - 10 - dB D drain efficiency 22 26 % ACPR885k adjacent channel power ratio (885 kHz) 43 47 - 30 - dBc 7.1 Ruggedness in class-AB operation The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1200 mA; PL = 35 W (IS-95); f = 2500 MHz. BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 3 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 001aam987 17 ηD (%) (3) Gp (dB) 001aam988 50 40 (1) (3) (2) 16 30 (1) (2) 20 15 10 0 14 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 1200 mA. 20 60 80 100 PL (W) VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 1. 40 Single carrier IS-95 power gain as a function of load power; typical values Fig 2. Single carrier IS-95 drain efficiency as a function of load power; typical values BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 4 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 001aam989 0 ACPR885 (dBc) −10 001aam990 0 ACPR1980 (dBc) −20 −20 −30 (3) (2) (1) −40 (3) (2) (1) −40 −50 −60 −60 −70 0 20 40 60 80 100 PL (W) −80 VDS = 28 V; IDq = 1200 mA. 0 20 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values 001aam991 12 60 80 100 PL (W) VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz Fig 3. 40 Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of load power; typical values 001aam992 250 PL(M) (W) PAR 200 (1) (2) (3) 8 150 100 (1) (2) (3) 4 50 0 0 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 1200 mA. 20 60 80 100 PL (W) VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 5. 40 Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values Fig 6. Single carrier IS-95 peak power as a function of load power; typical values BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 5 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 7.3 Pulsed CW 001aam993 17 001aam994 60 Gp (dB) ηD (%) 16 15 (1) (3) (2) 40 (3) (2) (1) 14 20 13 12 0 0 40 80 120 160 200 PL (W) 0 VDS = 28 V; IDq = 1200 mA. 40 120 160 200 PL (W) VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 7. 80 Pulsed CW power gain as a function of load power; typical values Fig 8. Pulsed CW drain efficiency as a function of load power; typical values BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 6 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aam995 17 001aam996 50 ηD (%) Gp (dB) 40 16 (3) (1) (2) (1) (3) (2) 30 20 15 10 0 14 0 40 80 120 0 40 PL (W) 120 PL (W) VDS = 28 V; IDq = 1200 mA. VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 9. 80 Single carrier W-CDMA power gain as a function of load power; typical values Fig 10. Single carrier W-CDMA drain efficiency as a function of load power; typical values BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 7 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 001aam997 0 001aam998 0 ACPR10M (dBc) −10 ACPR5M (dBc) −20 −20 −30 −40 (2) (1) (3) −40 (2) (1) (3) −50 −60 −60 0 40 80 120 −70 0 40 80 PL (W) 120 PL (W) VDS = 28 V; IDq = 1200 mA. VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values 001aam999 8 Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of load power; typical values 001aan000 300 PAR PL(M) (W) 6 200 (2) (1) (3) (3) (1) (2) 4 100 2 0 0 0 40 80 120 0 40 PL (W) 80 120 PL (W) VDS = 28 V; IDq = 1200 mA. VDS = 28 V; IDq = 1200 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values Fig 14. Single carrier W-CDMA peak output power as a function of load power; typical values BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 8 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 15. Package outline SOT539A BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 9 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 e 4.2 11.56 0.10 30.94 30.96 9.3 9.27 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 16. Package outline SOT539B BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 10 of 14 BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G27L-150P_7G27LS-150P v.2 20130712 Product data sheet Modifications: • • BLF7G27L-150P_7G27LS-150P v.1 The package outline Figure 16 is updated. Translation disclaimer added to the legal text. BLF7G27L-150P_7G27LS-150P v.1 20101112 Product data sheet - BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 - © NXP B.V. 2013. All rights reserved. 11 of 14 NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 12 of 14 NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G27L-150P_7G27LS-150P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 13 of 14 NXP Semiconductors BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 July 2013 Document identifier: BLF7G27L-150P_7G27LS-150P