BLF888,112

BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application information RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless otherwise specified. D IMD3 (dB) (%) (dBc) (dBc) 19 46 32 - 31 - 31 [1] Mode of operation f PL(PEP) PL(AV) Gp (MHz) (W) (W) 2-Tone, class AB f1 = 860; f2 = 860.1 500 250 DVB-T (8k OFDM) 858 - 110 19 [1] IMDshldr Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:  Peak envelope power load power = 500 W  Power gain = 19 dB  Drain efficiency = 46 %  Third order intermodulation distortion = 32 dBc  DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:  Average output power = 110 W  Power gain = 19 dB  Drain efficiency = 31 %  Shoulder distance = 31 dBc (4.3 MHz from center frequency)  Integrated ESD protection  Advanced flange material for optimum thermal behavior and reliability BLF888 NXP Semiconductors UHF power LDMOS transistor         Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications in the UHF band  Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 2 1 5 3 3 5 4 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF888 - Version flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF888 Product data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 104 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter Conditions thermal resistance from junction to case Tcase = 80 C; PL(AV) = 110 W [1] Typ Unit 0.24 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 104 - - V 1.4 1.9 2.4 V V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA [1] VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA [1] IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 43 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 13.5 A [1] - 17 - S VGS = VGS(th) + 3.75 V; ID = 9.5 A [1] - 105 - m VGS = 0 V; VDS = 50 V; f = 1 MHz [2] - 205 - pF - 65 - pF - 2.2 - pF Min Typ Max Unit - 50 - V - 1.3 - A RDS(on) drain-source on-state resistance input capacitance Ciss Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz [2] Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz [2] [1] ID is the drain current. [2] Capacitance values without internal matching. Table 7. RF characteristics Th = 25 C unless otherwise specified. Symbol Parameter Conditions 2-Tone, class AB VDS drain-source voltage IDq quiescent drain current PL(PEP) peak envelope power load power 500 - - W PL(AV) average output power 250 - - W Gp power gain 18 19 - dB D drain efficiency 42 46 - % IMD3 third-order intermodulation distortion - 32 28 dBc - 50 - V - 1.3 - A total device DVB-T (8k OFDM) VDS drain-source voltage IDq quiescent drain current PL(AV) average output power 110 - - W Gp power gain 18 19 - dB BLF888 Product data sheet total device All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor Table 7. RF characteristics …continued Th = 25 C unless otherwise specified. Symbol Parameter D drain efficiency IMDshldr PAR Conditions Min Typ Max Unit 28 31 - % intermodulation distortion shoulder [1] - 31 28 dBc peak-to-average ratio [2] - 8.3 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 001aaj274 250 Coss (pF) 200 150 100 50 0 20 40 60 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 2-Tone 001aak641 22 60 ηD (%) Gp (dB) 20 Gp 18 16 ηD 001aak642 22 50 Gp (dB) 20 40 18 30 16 IMD3 (dBc) −10 Gp −20 −30 IMD3 14 20 14 −40 12 10 12 −50 10 0 100 200 0 400 300 0 100 2-Tone power gain and drain efficiency as function of load power; typical values Product data sheet 200 300 PL (W) VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. BLF888 −60 400 10 PL (W) Fig 2. 0 VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 3. 2-Tone power gain and third order intermodulation distortion as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 7.1.2 DVB-T 001aak643 22 Gp (dB) 20 0 IMDshldr (dBc) −10 Gp 001aak644 12 PAR (dB) 10 70 ηD (%) 50 ηD 18 −20 8 16 −30 6 10 14 −40 4 −10 12 −50 2 −30 −60 300 350 PL (W) 0 30 PAR IMDshldr 10 0 50 100 150 200 250 0 VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values 50 100 150 200 250 −50 300 350 PL (W) VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 5. DVB-T peak-to-average ratio and drain efficiency as function of load power; typical values 7.2 Broadband RF figures 7.2.1 2-Tone Gp (dB) 001aak645 24 22 60 55 ηD (%) Gp (dB) 001aak646 24 22 −15 Gp Gp −10 50 20 −20 18 45 18 −25 16 40 16 −30 14 35 14 20 ηD IMD3 (dBc) −35 IMD3 12 30 12 −40 10 25 10 −45 8 400 500 600 700 20 800 900 f (MHz) 8 400 2-Tone power gain and drain efficiency as function of frequency; typical values BLF888 Product data sheet 600 700 −50 800 900 f (MHz) PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 6. 500 Fig 7. 2-Tone power gain and third order intermodulation distortion as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 7.2.2 DVB-T 001aak647 9.5 50 ηD (%) PAR (dB) 001aak648 22 Gp Gp (dB) IMDshldr (dB) PAR 8.5 40 18 30 14 −10 −20 ηD 7.5 −30 IMDshldr 20 6.5 5.5 400 500 600 700 10 800 900 f (MHz) 6 400 DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values 500 600 700 −50 800 900 f (MHz) PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 8. −40 10 Fig 9. DVB-T power gain and intermodulation distortion shoulder as a function of frequency; typical values 7.3 Impedance information ZL drain Zi gate 001aai086 Fig 10. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T). BLF888 Product data sheet f Zi ZL MHz   300 1.018  j1.350 5.565 + j0.747 325 1.045  j1.022 5.435 + j0.752 350 1.076  j0.722 5.303 + j0.746 375 1.110  j0.444 5.167 + j0.730 400 1.148  j0.183 5.030 + j0.704 425 1.190 + j0.064 4.892 + j0.668 450 1.238 + j0.299 4.754 + j0.622 475 1.291 + j0.526 4.617 + j0.567 500 1.351 + j0.746 4.481 + j0.504 All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor Table 8. Typical push-pull impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T). BLF888 Product data sheet f Zi ZL MHz   525 1.417 + j0.961 4.346 + j0.432 550 1.492 + j1.171 4.214 + j0.353 575 1.577 + j1.378 4.084 + j0.266 600 1.672 + j1.582 3.958 + j0.173 625 1.779 + j1.783 3.834 + j0.074 650 1.901 + j1.983 3.713  j0.031 675 2.039 + j2.180 3.596  j0.142 700 2.196 + j2.373 3.482  j0.257 725 2.376 + j2.563 3.372  j0.377 750 2.581 + j2.745 3.266  j0.501 775 2.817 + j2.918 3.163  j0.628 800 3.087 + j3.076 3.064  j0.759 825 3.395 + j3.212 2.968  j0.893 850 3.746 + j3.317 2.876  j1.030 875 4.142 + j3.377 2.787  j1.170 900 4.583 + j3.374 2.701  j1.312 925 5.063 + j3.288 2.619  j1.455 950 5.566 + j3.094 2.540  j1.601 975 6.064 + j2.770 2.464  j1.749 1000 6.514 + j2.299 2.391  j1.898 All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 7.4 Reliability 001aak649 106 Years (1) (2) (3) (4) (5) (6) 105 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 24 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 11. BLF888 electromigration (IDS(DC), total device) 8. Test information Table 9. List of components For test circuit, see Figure 12, Figure 13 and Figure 14. Component Description Value B1, B2 semi rigid coax 25 ; 49.5 mm Remarks EZ90-25-TP C1 multilayer ceramic chip capacitor 12 pF [1] C2, C9, C10 multilayer ceramic chip capacitor 10 pF [1] C3 multilayer ceramic chip capacitor 4.7 pF [2] C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF [1] C7 multilayer ceramic chip capacitor 5.6 pF [2] C8, C13, C14 multilayer ceramic chip capacitor 100 pF [1] C11, C12 multilayer ceramic chip capacitor 2.0 pF [2] BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor Table 9. List of components …continued For test circuit, see Figure 12, Figure 13 and Figure 14. Component Description Value Remarks C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020U or capacitor of same quality. C17, C18 multilayer ceramic chip capacitor 100 pF C19, C20 multilayer ceramic chip capacitor 10 F, 50 V C21, C22 electrolytic capacitor 470 F; 63 V C30, C31 multilayer ceramic chip capacitor 10 pF [3] C32 multilayer ceramic chip capacitor 5.6 pF [3] C33, C34, C35 multilayer ceramic chip capacitor 100 pF [3] C36, C37 multilayer ceramic chip capacitor 4.7 F L1 microstrip - [4] (W  L) 15 mm  13 mm - [4] (W  L) 5 mm  26 mm - [4] (W  L) 2 mm  49.5 mm (W  L) 1.7 mm 3.5 mm L2 microstrip L3, L32 microstrip [2] TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. L4 microstrip - [4] L5 microstrip - [4] (W  L) 2 mm  9.5 mm - [4] (W  L) 5 mm  13 mm - [4] (W  L) 2 mm  11 mm [4] (W  L) 2 mm  3 mm L30 microstrip L31 microstrip L33 microstrip - R1, R2 resistor 10  R3, R4 resistor 5.6  R5, R6 resistor 100  R7, R8 potentiometer 1 k [1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF888 Product data sheet +VG1(test) R7 C19 R1 C17 +VD1(test) R5 C36 L5 R3 C21 L30 C34 50 Ω C33 L31 L33 C11 L1 L32 C5 C3 C1 C9 C13 C7 L2 B2 C15 L4 C8 50 Ω B1 C32 C31 Rev. 5 — 21 January 2011 All information provided in this document is subject to legal disclaimers. R4 L3 C30 C2 C4 C35 C6 C12 C10 C14 C16 C22 C37 R6 +VD2(test) C18 R2 C20 R8 001aak650 +VG2(test) See Table 9 for a list of components. Fig 12. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages BLF888 UHF power LDMOS transistor 11 of 17 © NXP B.V. 2011. All rights reserved. BLF888 NXP Semiconductors UHF power LDMOS transistor L3 L32 L5 L30 50 mm L1 L2 L31 L33 L4 L31 L2 L30 L1 L5 L32 L3 105 mm 001aak651 See Table 9 for a list of components. Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier +VG1(test) +VD1(test) + C17 R7 R5 C36 R1 − C21 C19 C34 C33 50 Ω C11 9 mm R3 C30 C32 C1 C3 C31 C35 C5 C6 C2 C4 19.5 mm 2 mm R4 C13 C9 C7 C12 C10 C14 31.5 mm C15 C8 50 Ω C16 C21 C20 C37 − R6 R8 C18 C22 R2 + +VG2(test) 6.5 mm +VD2(test) 001aak652 See Table 9 for a list of components. Fig 14. Component layout for class-AB common source amplifier BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A D A F D1 U1 B q C H1 1 H 2 w2 C w1 A c B p U2 E E1 5 L 3 4 A w3 b Q e w3 0.25 0 5 10 mm scale 0.010 Dimensions Unit(1) mm A b c D D1 E E1 e F H H1 L 1.969 17.50 25.53 3.86 max 5.77 11.81 0.15 31.55 31.37 10.29 10.29 13.72 nom min 4.80 11.56 0.10 30.94 31.12 10.03 10.03 1.689 17.25 25.27 3.35 p Q 3.30 3.02 q 3.05 2.77 U1 U2 w1 w2 0.25 0.51 41.28 10.29 35.56 41.02 10.03 0.078 0.689 1.005 0.152 0.130 0.119 1.625 0.405 max 0.227 0.465 0.006 1.242 1.235 0.405 0.405 0.540 inches nom 1.400 0.010 0.020 min 0.189 0.455 0.004 1.218 1.225 0.395 0.395 0.067 0.679 0.995 0.132 0.120 0.109 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot979a_po European projection Issue date 08-04-24 08-09-04 SOT979A Fig 15. Package outline SOT979A BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF888 v.5 20110121 Product data sheet - BLF888 v.4 Modifications: • Table 6 on page 3: in the conditions column of gfs the symbol VGS has been changed to VDS. BLF888 v.4 20100429 Product data sheet - BLF888 v.3 BLF888 v.3 20100211 Product data sheet - BLF888 v.2 BLF888 v.2 20091022 Preliminary data sheet - BLF888 v.1 BLF888 v.1 20081216 Objective data sheet - - BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF888 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 January 2011 © NXP B.V. 2011. All rights reserved. 16 of 17 BLF888 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.2 7.2.1 7.2.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Impedance information . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 January 2011 Document identifier: BLF888