BLF888

BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application information RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless otherwise specified. Mode of operation 2-Tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 PL(PEP) PL(AV) Gp (W) 500 (W) 250 110 (dB) 19 19 D (%) 46 31 IMD3 32 - IMDshldr 31 [1] (dBc) (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:  Peak envelope power load power = 500 W  Power gain = 19 dB  Drain efficiency = 46 %  Third order intermodulation distortion = 32 dBc  DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:  Average output power = 110 W  Power gain = 19 dB  Drain efficiency = 31 %  Shoulder distance = 31 dBc (4.3 MHz from center frequency)  Integrated ESD protection  Advanced flange material for optimum thermal behavior and reliability NXP Semiconductors BLF888 UHF power LDMOS transistor         Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications in the UHF band  Industrial applications in the UHF band 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Name Description BLF888 Version Type number Package flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj BLF888_4 Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min 0.5 65 - Max 104 +11 +150 200 Unit V V C C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 2 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL(AV) = 110 W [1] Typ 0.24 Unit K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS gfs RDS(on) Ciss Coss Crss [1] [2] Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance Conditions VGS = 0 V; ID = 2.7 mA VDS = 10 V; ID = 270 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 10 V; VDS = 0 V VGS = 10 V; ID = 13.5 A VGS = VGS(th) + 3.75 V; ID = 9.5 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz [1] [1] [2] [2] [2] [1] [1] Min 104 1.4 - Typ 1.9 43 17 105 205 65 2.2 Max 2.4 2.8 280 - Unit V V A A nA S m pF pF pF ID is the drain current. Capacitance values without internal matching. Table 7. RF characteristics Th = 25 C unless otherwise specified. Symbol VDS IDq PL(PEP) PL(AV) Gp D IMD3 VDS IDq PL(AV) Gp Parameter drain-source voltage quiescent drain current peak envelope power load power average output power power gain drain efficiency third-order intermodulation distortion drain-source voltage quiescent drain current average output power power gain total device total device Conditions Min 500 250 18 42 110 18 Typ 50 1.3 19 46 32 50 1.3 19 Max 28 Unit V A W W dB % dBc V A W dB 2-Tone, class AB DVB-T (8k OFDM) BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 3 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor Table 7. RF characteristics …continued Th = 25 C unless otherwise specified. Symbol D IMDshldr PAR [1] [2] Parameter drain efficiency intermodulation distortion shoulder peak-to-average ratio Conditions [1] [2] Min 28 - Typ 31 31 8.3 Max 28 - Unit % dBc dB Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 250 Coss (pF) 200 001aaj274 150 100 50 0 20 40 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 4 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 2-Tone 001aak641 001aak642 22 Gp (dB) 20 60 ηD (%) 22 Gp (dB) 20 0 IMD3 (dBc) −10 Gp 50 Gp 18 40 18 −20 16 ηD 30 16 IMD3 −30 14 20 14 −40 12 10 12 −50 10 0 100 200 300 PL (W) 0 400 10 0 100 200 300 PL (W) −60 400 VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. 2-Tone power gain and drain efficiency as function of load power; typical values Fig 3. 2-Tone power gain and third order intermodulation distortion as function of load power; typical values BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 5 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 7.1.2 DVB-T 001aak643 001aak644 22 Gp (dB) 20 0 IMDshldr (dBc) −10 12 PAR (dB) 10 70 ηD (%) Gp ηD 50 18 −20 8 PAR 30 16 IMDshldr 14 −30 6 10 −40 4 −10 12 −50 2 −30 10 0 50 100 150 200 250 −60 300 350 PL (W) 0 0 50 100 150 200 250 −50 300 350 PL (W) VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values Fig 5. DVB-T peak-to-average ratio and drain efficiency as function of load power; typical values 7.2 Broadband RF figures 7.2.1 2-Tone 001aak645 001aak646 Gp (dB) 24 22 Gp 20 ηD 18 16 14 12 10 8 400 60 55 50 45 40 35 30 25 ηD (%) Gp (dB) 24 22 20 18 16 14 IMD3 12 10 8 400 −10 −15 −20 −25 −30 −35 −40 −45 IMD3 (dBc) Gp 500 600 700 20 800 900 f (MHz) 500 600 700 −50 800 900 f (MHz) PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 6. 2-Tone power gain and drain efficiency as function of frequency; typical values Fig 7. 2-Tone power gain and third order intermodulation distortion as function of frequency; typical values © NXP B.V. 2010. All rights reserved. BLF888_4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 04 — 29 April 2010 6 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 7.2.2 DVB-T 001aak647 001aak648 9.5 PAR (dB) PAR 8.5 ηD 7.5 50 ηD (%) 40 22 Gp (dB) 18 Gp −10 IMDshldr (dB) −20 30 14 IMDshldr −30 6.5 20 10 −40 5.5 400 500 600 700 10 800 900 f (MHz) 6 400 500 600 700 −50 800 900 f (MHz) PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 8. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values Fig 9. DVB-T power gain and intermodulation distortion shoulder as a function of frequency; typical values 7.3 Impedance information ZL drain Zi gate 001aai086 Fig 10. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T). f MHz 300 325 350 375 400 425 450 475 500 BLF888_4 Zi  1.018  j1.350 1.045  j1.022 1.076  j0.722 1.110  j0.444 1.148  j0.183 1.190 + j0.064 1.238 + j0.299 1.291 + j0.526 1.351 + j0.746 All information provided in this document is subject to legal disclaimers. ZL  5.565 + j0.747 5.435 + j0.752 5.303 + j0.746 5.167 + j0.730 5.030 + j0.704 4.892 + j0.668 4.754 + j0.622 4.617 + j0.567 4.481 + j0.504 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 7 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor Table 8. Typical push-pull impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T). f MHz 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 Zi  1.417 + j0.961 1.492 + j1.171 1.577 + j1.378 1.672 + j1.582 1.779 + j1.783 1.901 + j1.983 2.039 + j2.180 2.196 + j2.373 2.376 + j2.563 2.581 + j2.745 2.817 + j2.918 3.087 + j3.076 3.395 + j3.212 3.746 + j3.317 4.142 + j3.377 4.583 + j3.374 5.063 + j3.288 5.566 + j3.094 6.064 + j2.770 6.514 + j2.299 ZL  4.346 + j0.432 4.214 + j0.353 4.084 + j0.266 3.958 + j0.173 3.834 + j0.074 3.713  j0.031 3.596  j0.142 3.482  j0.257 3.372  j0.377 3.266  j0.501 3.163  j0.628 3.064  j0.759 2.968  j0.893 2.876  j1.030 2.787  j1.170 2.701  j1.312 2.619  j1.455 2.540  j1.601 2.464  j1.749 2.391  j1.898 BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 8 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 7.4 Reliability 106 Years 105 (1) (2) (3) (4) (5) (6) 001aak649 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 IDS(DC) (A) 24 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 11. BLF888 electromigration (IDS(DC), total device) 8. Test information Table 9. List of components For test circuit, see Figure 12, Figure 13 and Figure 14. Component B1, B2 C1 C2, C9, C10 C3 C4, C5, C6 C7 C8, C13, C14 C11, C12 Description semi rigid coax multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 25 ; 49.5 mm 12 pF 10 pF 4.7 pF 8.2 pF 5.6 pF 100 pF 2.0 pF [1] [1] [2] [1] [2] [1] [2] Remarks EZ90-25-TP BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 9 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor Table 9. List of components …continued For test circuit, see Figure 12, Figure 13 and Figure 14. Component C15, C16 C17, C18 C19, C20 C21, C22 C30, C31 C32 C33, C34, C35 C36, C37 L1 L2 L3, L32 L4 L5 L30 L31 L33 R1, R2 R3, R4 R5, R6 R7, R8 [1] [2] [3] [4] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor microstrip microstrip microstrip microstrip microstrip microstrip microstrip microstrip resistor resistor resistor potentiometer Value 4.7 F, 50 V 100 pF 10 F, 50 V 470 F; 63 V 10 pF 5.6 pF 100 pF 4.7 F 10  5.6  100  1 k [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [3] [2] Remarks TDK C4532X7R1E475MT020U or capacitor of same quality. TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. (W  L) 15 mm  13 mm (W  L) 5 mm  26 mm (W  L) 2 mm  49.5 mm (W  L) 1.7 mm 3.5 mm (W  L) 2 mm  9.5 mm (W  L) 5 mm  13 mm (W  L) 2 mm  11 mm (W  L) 2 mm  3 mm American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 10 of 17 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 04 — 29 April 2010 11 of 17 BLF888_4 NXP Semiconductors +VG1(test) R7 C19 C17 R5 C36 L5 R1 +VD1(test) C21 R3 50 Ω C33 L33 C34 L32 L31 B2 C32 C31 L30 C1 C30 L1 C3 C2 C4 C11 C5 C6 C12 C9 C7 L2 L3 B1 C13 L4 C15 C8 50 Ω R4 C35 C10 C14 C16 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. C37 R6 C18 R2 C22 +VD2(test) C20 R8 001aak650 +VG2(test) See Table 9 for a list of components. Fig 12. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages UHF power LDMOS transistor BLF888 NXP Semiconductors BLF888 UHF power LDMOS transistor L32 L5 L3 L30 L1 L2 L4 L2 50 mm L33 L31 L31 L30 L1 L5 L32 L3 105 mm 001aak651 See Table 9 for a list of components. Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier +VG1(test) + C17 C36 R5 R7 R1 +VD1(test) − C19 9 mm C1 C3 C5 C6 C11 C21 R3 C34 C33 50 Ω C35 R4 C30 C31 C9 C7 C12 C10 C13 C15 C32 C2 C4 19.5 mm 2 mm 31.5 mm C20 C14 C8 50 Ω C16 C21 C37 R6 − R8 C18 R2 C22 + +VG2(test) 6.5 mm +VD2(test) 001aak652 See Table 9 for a list of components. Fig 14. Component layout for class-AB common source amplifier BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 12 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A D A F D1 U1 q H1 1 2 B C w2 w1 C A B c H U2 5 L A b e w3 3 4 p E1 E Q w3 0.25 0 5 scale Dimensions Unit(1) mm A b c D D1 E E1 e F H H1 L p 3.30 3.05 Q 3.02 35.56 2.77 41.02 10.03 q U1 U2 w1 0.25 w2 0.51 10 mm 0.010 1.969 17.50 25.53 3.86 max 5.77 11.81 0.15 31.55 31.37 10.29 10.29 13.72 nom min 4.80 11.56 0.10 30.94 31.12 10.03 10.03 1.689 17.25 25.27 3.35 41.28 10.29 0.078 0.689 1.005 0.152 0.130 0.119 1.625 0.405 max 0.227 0.465 0.006 1.242 1.235 0.405 0.405 0.540 inches nom 1.400 0.010 0.020 min 0.189 0.455 0.004 1.218 1.225 0.395 0.395 0.067 0.679 0.995 0.132 0.120 0.109 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version SOT979A References IEC JEDEC JEITA European projection sot979a_po Issue date 08-04-24 08-09-04 Fig 15. Package outline SOT979A BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 13 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 10. Abbreviations Table 10. Acronym CCDF DVB DVB-T LDMOS LDMOST OFDM PAR RF TTF UHF VSWR Abbreviations Description Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio Radio Frequency Time To Failure Ultra High Frequency Voltage Standing-Wave Ratio 11. Revision history Table 11. BLF888_4 Modifications: BLF888_3 BLF888_2 BLF888_1 Revision history Release date 20100429 Data sheet status Product data sheet Product data sheet Preliminary data sheet Objective data sheet Change notice Supersedes BLF888_3 BLF888_2 BLF888_1 Document ID • Table 7 on page 3: a correction was made to the minimum value of PL(PEP). 20100211 20091022 20081216 BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 14 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the © NXP B.V. 2010. All rights reserved. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF888_4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 04 — 29 April 2010 15 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF888_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 29 April 2010 16 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.2 7.2.1 7.2.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Impedance information . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 April 2010 Document identifier: BLF888_4